A single beam plasma or ion source apparatus, including multiple and different power sources, is provided. An aspect of the present apparatus and method employs simultaneous excitation of an ion source by DC and AC, or DC and RF power supplies. Another aspect employs an ion source including multiple magnets and magnetic shunts arranged in a generally E cross-sectional shape.

An ion implantation system has an aluminum trichloride source material. An ion source is configured to ionize the aluminum trichloride source material and form an ion beam. The ionization of the aluminum trichloride source material further forms a by-product having a non-conducting material containing chlorine. A hydrogen introduction apparatus is configured to introduce a reducing agent including hydrogen to the ion source. The reducing agent is configured to alter a chemistry of the non-conducting material to produce a volatile gas by-product. A beamline assembly is configured to selectively transport the ion beam, and an end station is configured to accept the ion beam for implantation of ions into a workpiece.

An ion source is provided. The ion source may include an ion chamber to generate an ion beam comprising a metal ion species; and a charge source, coupled to deliver a metal vapor to the ion chamber, the charge source including a charge mixture. The charge mixture may include a first portion, comprising an elemental metal; and a second portion, comprising a heterogeneous metal fluoride compound.

An ion milling device which balances high processing speed and a wide processing region with smoothness of a processing surface. The ion milling device includes first to third ion guns that emit unfocused ion beams. An ion beam center of the third ion gun is included in a first plane defined by a normal to a surface of a sample and a mask end, and an ion beam center of the first ion gun and an ion beam center of the second ion gun are included in a second plane. The second plane is inclined toward the mask with respect to the first plane, and an angle formed by the first plane and the second plane is more than 0 degrees and 10 degrees or less. The processing surface of the sample is formed in a region where the emitted ion beams overlap on the surface of the sample.

Provided is an ion beam processing apparatus including an ion generation chamber, a processing chamber, and electrodes to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber. The electrodes includes a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions. The apparatus also includes a power unit which applies different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by an ion generator in the ion generation chamber. A material of the first electrode is different from a material of the second electrode.

Provided is an ion gun that is capable of obtaining a higher plasma efficiency. This ion gun comprises: a first cathode 21 that is formed in a disc shape; a second cathode 12 that is formed in a disc shape and has an ion beam extraction hole 101a provided thereto; a first permanent magnet 14 that is disposed between the first cathode and the second cathode, and that is formed in a cylindrical shape; an anode 23 that has a cylindrical region 35a and an extending region 25a provided to one end of the cylindrical region; and an insulating material 26 that keeps the anode electrically insulated from the first cathode, the second cathode, and the first permanent magnet, all of which are electrically connected. The cylindrical region of the anode is disposed inside the inner diametrical position of the first permanent magnet, and the extending region of the anode is disposed so as to cross over the inner diametrical position of the first permanent magnet and to face the first cathode.

A method for improving the beam current for certain ion beams, and particularly germanium and argon, is disclosed. The use of argon as a second gas has been shown to improve the ionization of germane, allowing the formation of a germanium ion beam of sufficient beam current without the use of a halogen. Additionally, the use of germane as a second gas has been shown to improve the beam current of an argon ion beam.

Provided herein are approaches for increasing efficiency of ion sources. In some embodiments, an apparatus, such as an ion source, may include a chamber housing having a first end wall and a second end wall, and an extraction plate coupled to at least one of the first end wall and the second end wall. The extraction plate may include an extraction aperture. The apparatus may further include a tubular cathode extending between the first end wall and the second end wall.

A method of manufacturing a semiconductor device includes: preparing a stacked body in which a first layer, a second layer, a third layer, and a fourth layer are stacked in this order on a semiconductor substrate in a first direction, the stacked body including a first region and a second region different from the first region; etching the fourth layer in the first region and the second region to expose the third layer by irradiating the first region and the second region with an ion beam, and etching the third layer and the second layer in the second region to expose the first layer by irradiating the second regions with an ion beam in a state where the third layer is exposed in the first region.

A uniaxial counter-propagating monolaser atom trap cools and traps atoms with a single a laser beam and includes: an atom slower that slows atoms to form slowed atoms; an optical diffractor including: a first diffraction grating that receives primary light and produces first reflected light; a second diffraction grating that receives primary light and produces second reflected light; and a third diffraction grating that receives the primary light and produces third reflected light; and a trapping region that forms trap light from the reflected lights and receives slowed atoms to produce trapped atoms from the slowed atoms that interact with the trap light.