A source assembly for ion beam production is disclosed herein. An example source assembly may include a pair of plates separated by a distance, with each plate having an aperture, and the respective apertures aligned, and an ionization space defined at least by the distance and the respective apertures, where a ratio of the distance to an ionic mean free path of a gas in the ionization space is greater than one.

An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon or neon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a processing species and a halogen is introduced into a ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure processing species ions than would occur if the third source gas were not used.

A source assembly for producing an ion beam and comprising a collision ionization ion source having: A pair of stacked plates, sandwiched about an intervening gap; An ionization space between said plates, connected to a gas supply duct; An input zone, provided in a first of said plates, to admit an input beam of charged particles to said ionization space; An output aperture, located opposite said input zone and provided in the second of said plates, to allow emission of a flux of ions produced in said ionization space by said input beam,
which source assembly comprises: A carrier provided with a plurality of different collision ionization ion sources that mutually differ in respect of a gap height d between said plates; A selecting device, which allows a given one of said ion sources to be individually selected for production of said ion beam. The various sources in said plurality preferably have a scattering quotient Q.sub.S=d/l.sub.i with a value in a range 1-500, preferably in a range 1-200, where l.sub.i is an ionic mean free path length in said ionization space.

An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a dopant and a halogen is introduced into an ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure dopant ions than would occur if the third source gas were not used.

An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon or neon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a processing species and a halogen is introduced into a ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure processing species ions than would occur if the third source gas were not used.

An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a dopant and a halogen is introduced into an ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure dopant ions than would occur if the third source gas were not used.

Systems and methods for efficiently processing multiple samples with a BIB system, are disclosed. An example method for efficiently processing multiple samples with a BIB system according to the present invention comprises removing an individual sample holder containing a sample from a storage location within the BIB system, wherein the BIB system includes multiple sample holders positioned in one or more storage locations, loading the individual sample holder onto a sample stage configured to hold the sample holder during polishing of the corresponding sample held by the individual sample holder, and causing a BIB source to emit a broad ion beam towards the sample, wherein the broad ion beam removes at least a portion of the sample upon which it is incident. Once a desired portion of the sample is removed, the sample holder is removed from the sample stage and loaded back into the storage location.

Systems and methods for operating a broad ion beam (BIB) polisher in a sample preparation workflow having improved uptime, are disclosed. An example method for operating a broad ion beam (BIB) polisher having improved uptime according to the present invention comprises causing a first BIB source to emit a first broad ion beam towards a sample positioned within an interior volume of the BIB polisher while the first BIB source is in emitting the first broad ion beam towards the sample, removing a second BIB source from the BIB polisher that is configured to emit a second broad ion beam towards the sample when in use.

A chemical vapor deposition chamber including a vacuum chamber; a power source; a gas conduit coupling the vacuum chamber to a precursor gas source; a filament arrangement energized by the power source to thereby impart thermal energy to molecules of precursor gas flowing from the precursor gas source; a coupling mechanism; wherein the filament arrangement comprises a plurality of filaments and the coupling mechanism electrically coupling the power source only to a subset of the plurality of filaments at any given time, while remaining filaments are not energized.