Provided herein are approaches for reducing particles in an ion implanter. In some embodiments, an electrostatic filter of the ion implanter may include a housing and a plurality of conductive beam optics within the housing, the plurality of conductive beam optics arranged around an ion beam-line. At least one conductive beam optic of the plurality of conductive beam optics may include a conductive core element, a resistive material disposed around the conductive core, and a conductive layer disposed around the resistive material.

A scanning electron microscope. The scanning electron microscope may include a sliding vacuum seal between the electron optical imaging system and the sample carrier with a first plate having a first aperture associated with the electron optical imaging system and resting against a second plate having a second aperture associated with the sample carrier. The first plate and/or the second plate includes a groove circumscribing the first and/or second aperture. The scanning electron microscope may include a detector movable relative to the electron beam. The scanning electron microscope may include a motion control unit for moving a sample carrier along a collision free path.

A multi-beam charged particle system includes: a vacuum enclosure having an opening covered by a door; a particle source configured to generate charged particles, wherein the particle source is arranged within the vacuum enclosure; at least one multi-aperture plate module including at least one multi-aperture plate and a base; and a transfer box having an opening covered by a door. The at least one multi-aperture plate includes a plurality of apertures. The base is configured to hold the at least one multi-aperture plate. The base is configured to be fixed relative to the vacuum enclosure such that the multi-aperture plate module is arranged in an interior of the vacuum enclosure such that, during operation of the particle beam system, particles traverse the plural multi-aperture plates through the apertures of the plates.

The present invention provides an electron beam device suitable for observing the bottom of a deep groove or a deep hole with a high degree of accuracy under a large current condition. The electron beam device has: an electron optical system having an irradiation optical system to irradiate an aperture 153 with an electron beam 116 emitted from an electron source 100 and a reduction projection optical system to project and form an aperture image of the aperture on a sample 114; and a control unit 146 to control a projection magnification of the aperture image of the aperture projected and formed on the sample and an aperture angle 402 of the electron beam emitted to the sample by the electron optical system.

An optical characterization system utilizing a micro-lens array (MLA) is provided. The system may include an electron source and a MLA including a micro-deflection array (MDA). The MDA may include an insulator substrate and a plurality of hexapole electrostatic deflectors disposed on the insulator substrate. The MDA may further include a plurality of voltage connecting lines configured to electrically couple the plurality of hexapole electrostatic deflectors to one or more voltage sources. The MDA may be configured to split a primary electron beam from the electron source into a plurality of primary electron beamlets. The system may be configured to focus the plurality of primary electron beamlets at a wafer plane.

A multi-beam charged particle system includes: a vacuum enclosure having an opening covered by a door; a particle source configured to generate charged particles, wherein the particle source is arranged within the vacuum enclosure; at least one multi-aperture plate module including at least one multi-aperture plate and a base; and a transfer box having an opening covered by a door. The at least one multi-aperture plate includes a plurality of apertures. The base is configured to hold the at least one multi-aperture plate. The base is configured to be fixed relative to the vacuum enclosure such that the multi-aperture plate module is arranged in an interior of the vacuum enclosure such that, during operation of the particle beam system, particles traverse the plural multi-aperture plates through the apertures of the plates.

A multi-beam charged particle system includes: a vacuum enclosure having an opening covered by a door; a particle source configured to generate charged particles, wherein the particle source is arranged within the vacuum enclosure; at least one multi-aperture plate module including at least one multi-aperture plate and a base; and a transfer box having an opening covered by a door. The at least one multi-aperture plate includes a plurality of apertures. The base is configured to hold the at least one multi-aperture plate. The base is configured to be fixed relative to the vacuum enclosure such that the multi-aperture plate module is arranged in an interior of the vacuum enclosure such that, during operation of the particle beam system, particles traverse the plural multi-aperture plates through the apertures of the plates.

The present disclosure relates to an apparatus and method that manipulate the voltage at an edge ring relative to a substrate located on a substrate support located within a processing chamber. The apparatus includes a substrate support assembly that has a body having a substrate support portion having a substrate electrode embedded therein for applying a substrate voltage to a substrate. The body of the substrate support assembly further has an edge ring portion disposed adjacent to the substrate support portion. The edge ring portion has an edge ring electrode embedded therein for applying an edge ring voltage to an edge ring. The apparatus further includes an edge ring voltage control circuit coupled to the edge ring electrode. A substrate voltage control circuit is coupled to the substrate electrode. The edge ring voltage control circuit and the substrate voltage control circuit are independently tunable to generate a difference in voltage between the edge ring voltage and the substrate voltage.

An optical characterization system utilizing a micro-lens array (MLA) is provided. The system may include an electron source and a MLA including a micro-deflection array (MDA). The MDA may include an insulator substrate and a plurality of hexapole electrostatic deflectors disposed on the insulator substrate. The MDA may further include a plurality of voltage connecting lines configured to electrically couple the plurality of hexapole electrostatic deflectors to one or more voltage sources. The MDA may be configured to split a primary electron beam from the electron source into a plurality of primary electron beamlets. The system may be configured to focus the plurality of primary electron beamlets at a wafer plane.

Particle beam system comprising a particle source; a first multi-aperture plate with a multiplicity of openings downstream of which particle beams are formed; a second multi-aperture plate with a multiplicity of openings which are penetrated by the particle beams; an aperture plate with an opening which is penetrated by all the particles which also penetrate the openings in the first and the second multi-aperture plate; a third multi-aperture plate with a multiplicity of openings which are penetrated by the particle beams, and with a multiplicity of field generators which respectively provide a dipole field or quadrupole field for a beam; and a controller for feeding electric potentials to the multi-aperture plates and the aperture plate so that the second openings in the second multi-aperture plate respectively act as a lens on the particle beams 3 and feed adjustable excitations to the field generators.