A scanning electron microscopy system may include an electron-optical sub-system and a controller. The electron-optical sub-system may include an electron source and an electron-optical column configured to direct an electron beam to a sample. The electron-optical column may include a double-lens assembly, a beam limiting aperture disposed between a first and second lens of the double-lens assembly, and a detector assembly configured to detect electrons scattered from the sample. In embodiments, the controller of the scanning electron microscopy system may be configured to: cause the electron-optical sub-system to form a flooding electron beam and perform flooding scans of the sample with the flooding electron beam; cause the electron-optical sub-system to form an imaging electron beam and perform imaging scans of the sample with the imaging electron beam; receive images acquired by the detector assembly during the imaging scans; and determine characteristics of the sample based on the images.

Systems and methods for cooling an objective lens of a charged-particle beam system are disclosed. According to certain embodiments, the method for cooling an objective lens of a charged-particle beam system comprises receiving a fluid via a fluid input port of a bobbin, circulating the fluid that absorbs heat generated by a plurality of electromagnetic coils of the objective lens, via a plurality of channels distributed in the bobbin, and dispensing the fluid circulated by the plurality of channels via a fluid output port of the bobbin. The bobbin may further comprise a bottom flange proximal to a wafer and a top flange distal from the wafer. The bobbin having the plurality of channels may comprise an additively manufactured monolithic structure.

A composite beam apparatus includes an electron beam column for irradiating an electron beam onto a sample, a focused ion beam column for irradiating a focused ion beam onto the sample to form a cross section, and a neutral particle beam column having an acceleration voltage set lower than that of the focused ion beam column for irradiating a neutral particle beam onto the sample to perform finish processing of the cross section. The electron beam column, the focused ion beam column, and the neutral particle beam column are arranged such that the beams of the columns cross each other at an irradiation point. A controller controls the electron beam column to irradiate and scan the electron beam on the sample during cross section processing by the focused ion beam column and during finish processing by the neutral particle beam column. The composite beam apparatus is capable of suppressing the influence of charge build-up, or electric field or magnetic field leakage from an electron beam column, when subjecting a sample to cross-section processing with a focused ion beam and then performing finishing processing with another beam.

An objective lens arrangement includes a first, second and third pole pieces, each being substantially rotationally symmetric. The first, second and third pole pieces are disposed on a same side of an object plane. An end of the first pole piece is separated from an end of the second pole piece to form a first gap, and an end of the third pole piece is separated from an end of the second pole piece to form a second gap. A first excitation coil generates a focusing magnetic field in the first gap, and a second excitation coil generates a compensating magnetic field in the second gap. First and second power supplies supply current to the first and second excitation coils, respectively. A magnetic flux generated in the second pole piece is oriented in a same direction as a magnetic flux generated in the second pole piece.

A charged particle beam device includes: a charged particle source that emits a charged particle beam; a boosting electrode disposed between the charged particle source and a sample to form a path of the charged particle beam and to accelerate and decelerate the charged particle beam; a first pole piece that covers the boosting electrode; a second pole piece that covers the first pole piece; a first lens coil disposed outside the first pole piece and inside the second pole piece to form a first lens; a second lens coil disposed outside the second pole piece to form a second lens; and a control electrode formed between a distal end portion of the first pole piece and a distal end portion of the second pole piece to control an electric field formed between the sample and the distal end portion of the second pole piece.

The present invention provides apparatuses to inspect small particles on the surface of a sample such as wafer and mask. The apparatuses provide both high detection efficiency and high throughput by forming Dark-field BSE images. The apparatuses can additionally inspect physical and electrical defects on the sample surface by form SE images and Bright-field BSE images simultaneously. The apparatuses can be designed to do single-beam or even multiple single-beam inspection for achieving a high throughput.

An exposure device is provided, including: a body tube depressurized to produce a vacuum state therein; a plurality of charged particle beam sources that are provided in the body tube, and emit a plurality of charged particle beams in a direction of extension of the body tube; a plurality of electromagnetic optical elements, each being corresponding to one of the plurality of charged particle beams in the body tube, and controls the one of the plurality of charged particle beams; first and second partition walls that are arranged separately from each other in the direction of extension in the body tube, and form non-vacuum spaces between at least parts of the first and second partition walls; and a depressurization pump that depressurizes a non-vacuum space that contacts the first partition wall and a non-vacuum space that contacts the second partition wall to an air pressure between zero and atmospheric pressure.

A charged particle beam optical system is provided with a plurality of irradiation optical systems each of which irradiates an object W with a charged particle beam EB, the plurality of irradiation optical system includes a first irradiation optical system and a second irradiation optical system that generates a second magnetic field having a characteristics different from a characteristics of a first magnetic field generated by the first irradiation optical system.

A charged particle beam device includes: a charged particle source; an acceleration electric power source connected to the charged particle source for accelerating a charged particle beam emitted by the acceleration electric power source; and an objective lens for focusing the charged particle beam onto a sample, the objective lens including: a central magnetic pole having a central axis coinciding with an ideal optical axis of the charged particle beam; an upper magnetic pole; a cylindrical side-surface magnetic pole; and a disk-shaped lower magnetic pole, the central magnetic pole having an upper portion on a side of the sample and a column-shaped lower portion, the upper magnetic pole having a circular opening at a center thereof and being in a shape of a disk that is tapered to a center thereof and that is thinner at a position closer to a center of gravity of the central magnetic pole.

A scanning electron microscope device for a sample to be detected and an electron beam inspection apparatus are provided, the scanning electron microscope device being configured to project electron beam to a surface of the sample to generate backscattered electrons and secondary electrons, and comprising: an electron beam source, a deflection mechanism, and an objective lens assembly. The deflection mechanism comprises a first deflector located downstream the electron beam source and a second deflector located downstream the first deflector. The objective lens assembly comprises: an excitation coil; and a magnetic yoke, formed by a magnetizer material as a housing which opens towards the sample and comprising a hollow body defining an internal chamber where the excitation coil is accommodated, and at least one inclined portion extending inward from the hollow body at an angle with reference to the hollow body and directing towards the optical axis, with an end of the at least one inclined portion being formed into a pole piece. The deflection mechanism further comprises a third deflector located between the second deflector and the objective lens assembly and disposed in an opening delimited and circumscribed by the pole piece, and each of the first deflector, the second deflector and the third deflector is an electrostatic deflector.