A substrate processing apparatus includes: a processing container configured to be depressurized; a plasma box including an interior, which communicates with an interior of the processing container, and configured such that plasma is generated in the interior of the plasma box; a first gas nozzle installed in the processing container and into which a cleaning gas is introduced; and a second gas nozzle installed in the plasma box and configured such that an interior of the second gas nozzle is adjusted to have a negative pressure with respect to the interior of the processing container.

An ion source includes an external housing, an electrically conductive tip, a gas supply system, configured to supply an operating gas into the neighborhood of the tip, and a cooling system configured to cool the tip. The gas supply system includes a first tube with a hollow interior, and a chemical getter material is provided in the hollow interior of the tube.

An electron beam source comprising a cathode, an anode, a means for deflecting an electron beam over a target surface and at least one vacuum pump, the electron beam source further comprising a contraction area arranged between the anode and the means for deflecting the electron beam where a hole in the contraction area is aligned with a hole in the anode with respect to the cathode, a first vacuum pump is arranged between the contraction area and the anode and a second vacuum pump is arranged above the anode, a gas inlet is provided between the contraction area and the means for deflecting the electron beam, wherein a first crossover of the electron beam is arranged between the cathode and the anode and a second crossover is arranged at or in close proximity to the contraction area.

Provided is an electron gun chamber for a scanning electron microscope with (a) an electron source chamber; (b) an intermediate room; (c) an air lock valve installation part; (d) exhaust holes for a preliminary vacuum exhaust pump; and (e) an opening and closing means.

An etching method of etching silicon formed on a side surface of a recess that exists in a substrate includes: forming an oxide film on a surface of the silicon by performing a radical oxidation processing on the substrate; performing a chemical processing with a gas on the oxide film; and removing a reaction product produced by the chemical processing, wherein the forming the oxide film includes: a first phase of performing a radical processing with a plasma of an oxygen-containing gas; and a second phase of performing a radical processing with a plasma of the oxygen-containing gas and an etching gas, and wherein the forming the oxide film, the performing the chemical processing, and the removing the reaction product are repeated multiple times.

In this charged particle beam device, when a sample chamber is to be placed in a high-vacuum state, a charged particle gun chamber and the sample chamber are evacuated via a main intake of a turbo molecular pump, and when the sample chamber is to be placed in a low-vacuum state, the sample chamber is evacuated via an intermediate intake of the turbo molecular pump while the charged particle gun chamber is evacuated via the main intake. An oil rotation pump for performing back pressure exhausting of the turbo molecular pump does not directly evacuate the charged particle gun chamber or the sample chamber. It is thereby possible to minimize contamination of the device interior in both high-vacuum and low-vacuum states, which makes it possible to prevent contamination of the observed sample and reduce deterioration over time in the ultimate vacuum.

A processing apparatus is provided. The processing apparatus includes a wafer processing chamber. The processing apparatus further includes a pump configured to evacuate the wafer processing chamber. The pump includes an inlet port located on a lower boundary plane. The processing apparatus also includes an exhaust conduit placed in fluid communication with the gas outlet of the wafer processing chamber and the inlet port of the pump. The exhaust conduit includes a sacrificial tube structure. The sacrificial tube structure is arranged in such a way that a projection of the sacrificial tube structure on the lower boundary plane overlaps the inlet port of the pump.

The purpose of the present invention is to be able to acquire high-resolution images in a scanning electron microscope using a combination of a cold cathode (CFE) electron source and a boosting process, even at low accelerating voltage enhancing the current stability of the CFE electron source. A configuration in which a CFE electron source (101), an anode electrode (103) at positive (+) potential, and an insulator (104) for isolating the anode electrode (103) from ground potential are accommodated within a single vacuum chamber (105), and an ion pump (106) and a non-evaporable getter (NEG) pump (107) are connected to the vacuum chamber (105), is employed.

A nozzle-type electron beam irradiation device includes a vacuum chamber, an electron beam generator disposed in the vacuum chamber, and a vacuum nozzle that is connected to the vacuum chamber so as to guide an electron beam from the electron beam generator and emit the electron beam to the outside. The nozzle-type electron beam irradiation device includes a high-vacuum pump capable of sucking gas from the vicinity of the connecting part of the vacuum nozzle in the vacuum chamber.

In one embodiment a vacuum assembly for an ion implanter system includes a first turbomolecular pump operatively coupled to a source chamber of the ion implanter system and a first backing line having a first end and a second end, the first end coupled to an exhaust port of the first turbomolecular pump, wherein the first turbomolecular pump and first end of the first backing line are configured to operate at a voltage potential of the source chamber. The vacuum assembly further includes a voltage insulator that is insulatively coupled to the first backing line, and a second turbomolecular pump operatively coupled to the first backing line, wherein the second turbomolecular pump is configured to operate at ground voltage potential.