In a charged particle apparatus with an ion pump, which is a charged particle beam apparatus with an ion pump including a charged particle beam irradiation detecting unit for irradiating a sample with a charged particle beam in a chamber and detecting a secondary charged particle, an image processing unit for forming a secondary charged particle image from a detection signal of the detected secondary charged particle, an output unit for processing at the image processing unit and outputting an image, an ion pump for maintaining the interior of the processing chamber in a vacuum state, a driving power supply unit of the ion pump, and a high voltage cable for connecting the ion pump and the driving power supply unit, the driving power supply unit of the ion pump is structured to include a high voltage power supply circuit unit for operating the ion pump, a load current detection circuit unit for detecting a load current applied to the ion pump, and a canceller circuit unit for reducing low frequency noise applied to the load current detection circuit unit in order to sufficiently reduce low frequency noise of the power supply of the ion and to measure the degree of vacuum with a high accuracy.

A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distributor to deliver a processing gas to the plasma chamber, a pump coupled to the plasma chamber to evacuate the chamber, a workpiece support to hold a workpiece, and an intra-chamber electrode assembly that includes a plurality of filaments extending laterally through the plasma chamber between a ceiling of the plasma chamber and the workpiece support. Each filament including a conductor surrounded by a cylindrical insulating shell. The plurality of filaments includes a first multiplicity of filaments and a second multiplicity of filaments arranged in an alternating pattern with the first multiplicity of filaments. An RF power source is configured to apply a first RF input signal to the first multiplicity of filaments.

A system that predicts an apparatus state of a plasma processing apparatus including a processing chamber in which a sample is processed is configured to have a data recording unit that records emission data of plasma during processing of the sample and electrical signal data obtained from the apparatus during the plasma processing, an arithmetic unit that includes a first calculation unit for calculating a first soundness index value of the plasma processing apparatus and a first threshold for an abnormality determination using a first algorithm with respect to the recorded emission data and a second calculation unit for calculating a second soundness index value of the plasma processing apparatus and a second threshold for the abnormality determination using a second algorithm with respect to the electrical signal data recorded in the data recording unit, and a determination unit that determines soundness of the plasma processing apparatus using the calculated first soundness index value and the first threshold and the calculated second soundness index value and the second threshold.

A lens element of a charged particle system comprises an electrode having a central opening. The lens element is configured for functionally cooperating with an aperture array that is located directly adjacent said electrode, wherein the aperture array is configured for blocking part of a charged particle beam passing through the central opening of said electrode. The electrode is configured to operate at a first electric potential and the aperture array is configured to operate at a second electric potential different from the first electric potential. The electrode and the aperture array together form an aberration correcting lens.

An apparatus includes an ion chamber and a valve assembly. The ion chamber may include a housing enclosing a gas and one or more electrodes. The valve assembly is coupled to the ion chamber allowing control of replacement of the gas within the housing.

A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.

In a vacuum apparatus including an ultrahigh vacuum evacuation pump, the ultrahigh vacuum evacuation pump is provided with a rod-shaped cathode including a non-evaporable getter alloy, a cylindrical anode disposed so as to surround the cathode, and a coil or a ring-shaped permanent magnet disposed so as to sandwich upper and lower openings of the cylindrical anode and surround the rod-shaped cathode. As a result, it is possible to reduce the size and weight of the ultrahigh vacuum evacuation pump and to dispose the vacuum evacuation pump at a desired location in the vacuum apparatus.

Disclosed herein is a plasma etching method for plasma-etching a ground surface of a wafer after the wafer with a tape attached to its lower surface is ground. The plasma etching method includes a drying step of applying heat to the tape to remove water present in the tape, an electrostatic holding step of electrostatically holding the wafer by an electrostatic force generated by supplying DC power to electrodes of an electrostatic chuck, after the drying step, and an etching step of reducing the pressure of a reduced-pressure chamber and plasma-etching the ground surface of the wafer by a reaction gas brought into a plasma state, after the electrostatic holding step.

In a charged particle apparatus with an ion pump, which is a charged particle beam apparatus with an ion pump including a charged particle beam irradiation detecting unit for irradiating a sample with a charged particle beam in a chamber and detecting a secondary charged particle, an image processing unit for forming a secondary charged particle image from a detection signal of the detected secondary charged particle, an output unit for processing at the image processing unit and outputting an image, an ion pump for maintaining the interior of the processing chamber in a vacuum state, a driving power supply unit of the ion pump, and a high voltage cable for connecting the ion pump and the driving power supply unit, the driving power supply unit of the ion pump is structured to include a high voltage power supply circuit unit for operating the ion pump, a load current detection circuit unit for detecting a load current applied to the ion pump, and a canceller circuit unit for reducing low frequency noise applied to the load current detection circuit unit in order to sufficiently reduce low frequency noise of the power supply of the ion and to measure the degree of vacuum with a high accuracy.

The disclosure relates to a low energy electron microscopy. The electron microscopy includes a vacuum chamber; an electron gun used to emit electron beam; a diffraction chamber; an imaging device; a sample holder used to fix two-dimensional nanomaterial sample; a vacuum pumping device; and a control computer. The electron beam transmits the sample to form a transmission electron beam and diffraction electron beam. The control computer includes a switching module to switch the work mode between a large beam spot diffraction imaging mode and small beam spot diffraction imaging mode.