A method of depositing a layer on a semiconductor workpiece is disclosed. The method includes placing the semiconductor workpiece on a wafer chuck in a processing chamber, introducing a first precursor into the processing chamber, introducing a second precursor into the processing chamber, and while the second precursor is in the processing chamber, applying radiation to the semiconductor workpiece, whereby a surface of the semiconductor workpiece is heated. The method also includes, while the second precursor is in the processing chamber, applying a voltage bias to the wafer chuck.

An apparatus includes an ion chamber and a valve assembly. The ion chamber may include a housing enclosing a gas and one or more electrodes. The valve assembly is coupled to the ion chamber allowing control of replacement of the gas within the housing.

A system and corresponding method for electron cryomicroscopy, comprising: a field-emission gun for generating an electron beam, the field-emission gun being energized, in use, to generate a 80 keV to 120 keV electron beam which is emitted into a vacuum enclosure and towards a specimen holder; the vacuum enclosure containing, at least in part: an objective lens for focusing an image of the specimen, the objective lens being disposed in the path of the electron beam and having a chromatic aberration coefficient, Cc, selected to achieve a resolution value better than a desired amount; the specimen holder for holding a specimen, the specimen holder being disposed in the path of the electron beam; a cryostage for cooling a specimen; a cryo-shield for surrounding a specimen and reducing an ice contamination rate of the specimen; and a direct electron detector comprising an array of pixels, each pixel capable of detecting an incident electron that has passed through a sample and struck the pixel.

A vacuum trap, a plasma etch system using the vacuum trap and a method of cleaning the vacuum trap. The vacuum trap includes a baffle housing; and a removable baffle assembly disposed in the baffle housing, the baffle assembly comprising a set of baffle plates, the baffle plates spaced along a support rod from a first baffle plate to a last baffle plate, the baffle plates alternately disposed above and below the support rod and alternately disposed in an upper region and a lower region of the baffle housing.

The disclosure relates to a low energy electron microscopy. The electron microscopy includes a vacuum chamber; an electron gun used to emit electron beam; a diffraction chamber; an imaging device; a sample holder used to fix two-dimensional nanomaterial sample; a vacuum pumping device; and a control computer. The electron beam transmits the sample to form a transmission electron beam and diffraction electron beam. The control computer includes a switching module to switch the work mode between a large beam spot diffraction imaging mode and small beam spot diffraction imaging mode.

An ion pump and a charged particle beam device each includes two opposite flat-plate cathodes, an anode with a cylindrical shape having openings that face the respective flat-plate cathodes, a voltage application unit configured to apply a potential higher than potentials of the flat-plate cathodes to the anode, a magnetic field application unit configured to apply a magnetic field along an axial direction of the cylindrical shape of the anode, and a cathode bar arranged within the anode. The surface of the cathode bar is formed with a material that forms a non-evaporative getter alloy film on the anode or the flat-plate cathodes.

An ion implantation system is described, including: an ion implanter comprising a housing defining an enclosed volume in which is positioned a gas box configured to hold one or more gas supply vessels, the gas box being in restricted gas flow communication with gas in the enclosed volume that is outside the gas box; a first ventilation assembly configured to flow ventilation gas through the housing and to exhaust the ventilation gas from the housing to an ambient environment of the ion implanter; a second ventilation assembly configured to exhaust gas from the gas box to a treatment apparatus that is adapted to at least partially remove contaminants from the gas box exhaust gas, or that is adapted to dilute the gas box exhaust gas, to produce a treated effluent gas, the second ventilation assembly comprising a variable flow control device for modulating flow rate of the gas box exhaust gas between a relatively lower gas box exhaust gas flow rate and a relatively higher gas box exhaust gas flow rate, and a motive fluid driver adapted to flow the gas box exhaust gas through the variable flow control device to the treatment apparatus; and a monitoring and control assembly configured to monitor operation of the ion implanter for occurrence of a gas hazard event, and thereupon to responsively prevent gas-dispensing operation of the one or more gas supply vessels, and to modulate the variable flow control device to the relatively higher gas box exhaust gas flow rate so that the motive fluid driver flows the gas box exhaust gas to the treatment apparatus at the relatively higher gas box exhaust gas flow rate. Preferably, in a gas hazard event, the shell exhaust discharge from the housing is also terminated, to facilitate exhausting all gas within the housing, outside as well as inside the gas box, to the treatment unit.

A method of fabricating a microelectronic device, such as a high electron mobility transistors (HEMT), is disclosed. In some examples, the method comprises placing a masked semiconductor sample into a treatment chamber. An oxidizing gas is introduced into the treatment chamber and ionized by an inductively-coupled plasma (ICP)-only plasma source to form a first plasma that oxidizes an exposed region of the sample surface. The oxidizing gas is then evacuated from the treatment chamber, and a reducing gas is introduced into the treatment chamber. The reducing gas in the treatment chamber is ionized via the ICP-only plasma source to form a second plasma that reduces the exposed region of the sample surface. The sample may be heated to a temperature of at least about 100° C. (e.g., 200° C.), resulting in the etching/removal of a portion of the exposed region of the sample via chemical conversion and thermal desorption.

The purpose of the present invention is to be able to acquire high-resolution images in a scanning electron microscope using a combination of a cold cathode (CFE) electron source and a boosting process, even at low accelerating voltage enhancing the current stability of the CFE electron source. A configuration in which a CFE electron source (101), an anode electrode (103) at positive (+) potential, and an insulator (104) for isolating the anode electrode (103) from ground potential are accommodated within a single vacuum chamber (105), and an ion pump (106) and a non-evaporable getter (NEG) pump (107) are connected to the vacuum chamber (105), is employed.

An ion source includes an external housing, an electrically conductive tip, a gas supply system, configured to supply an operating gas into the neighborhood of the tip, and a cooling system configured to cool the tip. The gas supply system includes a first tube with a hollow interior, and a chemical getter material is provided in the hollow interior of the tube.