An ion milling apparatus includes a sample holder, a vacuum chamber, an evacuation section, a vacuum gauge, a heater, a gas inlet assembly, and a control section. The evacuation section vents gas in the interior space of the vacuum chamber. The vacuum gauge measures the pressure in the interior space of the vacuum chamber. The heater heats the sample holder. The gas inlet assembly admits a dry gas containing no moisture into the interior space of the vacuum chamber. When the pressure in the interior space has reached below a given pressure, the control section controls the gas inlet assembly based on information about the pressure in the interior space so as to admit the dry gas into the vacuum chamber.

A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.

Systems and methods are provided for evacuating a chamber 101. The evacuation system comprises a cooler 320 coupled with the chamber and a controller 350. The controller is configured to determine whether a property of the cooler or the chamber satisfies one or more conditions. Based on the determination that the property satisfies the one or more conditions, the controller is configured to isolate the cooler from the chamber or control the temperature of the cooler to increase at one or more rates. The controller is further configured to control one or more pumps 330,340 to pump the chamber to a base pressure value.

A system that predicts an apparatus state of a plasma processing apparatus including a processing chamber in which a sample is processed is configured to have a data recording unit that records emission data of plasma during processing of the sample and electrical signal data obtained from the apparatus during the plasma processing, an arithmetic unit that includes a first calculation unit for calculating a first soundness index value of the plasma processing apparatus and a first threshold for an abnormality determination using a first algorithm with respect to the recorded emission data and a second calculation unit for calculating a second soundness index value of the plasma processing apparatus and a second threshold for the abnormality determination using a second algorithm with respect to the electrical signal data recorded in the data recording unit, and a determination unit that determines soundness of the plasma processing apparatus using the calculated first soundness index value and the first threshold and the calculated second soundness index value and the second threshold.

An object of the present disclosure is to provide a charged particle beam device that can suppress an influence to a device generated according to the preliminary exhaust. In order to achieve the object, suggested is a charged particle beam device including a vacuum sample chamber that maintains an atmosphere around a sample to be irradiated with a charged particle beam in a vacuum state; and a preliminary exhaust chamber to which a vacuum pump for vacuuming an atmosphere of the sample introduced into the vacuum sample chamber is connected, in which the vacuum sample chamber is a box-shaped body including a top plate, and a portion between the top plate and a side wall of the box-shaped body positioned below the top plate includes a portion in which the top plate and the side wall are not in contact with each other.

Systems and methods are provided for evacuating a chamber 101. The evacuation system comprises a cooler 320 coupled with the chamber and a controller 350. The controller is configured to determine whether a property of the cooler or the chamber satisfies one or more conditions. Based on the determination that the property satisfies the one or more conditions, the controller is configured to isolate the cooler from the chamber or control the temperature of the cooler to increase at one or more rates. The controller is further configured to control one or more pumps 330,340 to pump the chamber to a base pressure value.

An integral Wien filter and vacuum pump for separating charged particles or for orienting their spin direction while maintaining optimal beamline vacuum. The vacuum pump is an ion pump including one or more cylindrical Penning cells to trap and expel electrons. The Wien filter includes orthogonal electric and magnetic fields to direct particles with the desired speed through the device while deflecting particles at undesired speeds. The Wien filter includes two electrodes, one biased positive and one biased negative, a dipole magnet, and means for reversing polarity of the electrodes to flip the spin of the charged particles. Metal plates on either side of the Penning cells embed gas that is ionized by trapped electrons in the Penning cell thus creating vacuum by turning gas into solid. The two metal plates can be configured to obtain vacuum pumping via chemical gettering and for removal of noble gases.

An object of the invention is to stably supply an electron beam from an electron gun, that is, to prevent variation in intensity of the electron beam. The invention provides a charged particle beam device that includes an electron gun having an electron source, an extraction electrode to which a voltage used for extracting electrons from the electron source is applied, and an acceleration electrode to which a voltage used for accelerating the electrons extracted from the electron source is applied, a first heating unit that heats the extraction electrode, and a second heating unit that heats the acceleration electrode.

A system that predicts an apparatus state of a plasma processing apparatus including a processing chamber in which a sample is processed is configured to have a data recording unit that records emission data of plasma during processing of the sample and electrical signal data obtained from the apparatus during the plasma processing, an arithmetic unit that includes a first calculation unit for calculating a first soundness index value of the plasma processing apparatus and a first threshold for an abnormality determination using a first algorithm with respect to the recorded emission data and a second calculation unit for calculating a second soundness index value of the plasma processing apparatus and a second threshold for the abnormality determination using a second algorithm with respect to the electrical signal data recorded in the data recording unit, and a determination unit that determines soundness of the plasma processing apparatus using the calculated first soundness index value and the first threshold and the calculated second soundness index value and the second threshold.

A processing apparatus is provided. The processing apparatus includes a wafer processing chamber. The processing apparatus further includes a pump configured to evacuate the wafer processing chamber. The pump includes an inlet port located on a lower boundary plane. The processing apparatus also includes an exhaust conduit placed in fluid communication with the gas outlet of the wafer processing chamber and the inlet port of the pump. The exhaust conduit includes a sacrificial tube structure. The sacrificial tube structure is arranged in such a way that a projection of the sacrificial tube structure on the lower boundary plane overlaps the inlet port of the pump.