Patent classifications
H01J2237/20207
MULTIPLE CHARGED-PARTICLE BEAM APPARATUS WITH LOW CROSSTALK
Systems and methods of forming images of a sample using a multi-beam apparatus are disclosed. The method may include generating a plurality of secondary electron beams from a plurality of probe spots on the sample upon interaction with a plurality of primary electron beams. The method may further include adjusting an orientation of the plurality of primary electron beams interacting with the sample, directing the plurality of secondary electron beams away from the plurality of primary electron beams, compensating astigmatism aberrations of the plurality of directed secondary electron beams, focusing the plurality of directed secondary electron beams onto a focus plane, detecting the plurality of focused secondary electron beams by a charged-particle detector, and positioning a detection plane of the charged-particle detector at or close to the focus plane.
COMPOSITE CHARGED PARTICLE BEAM APPARATUS
A composite charged particle beam apparatus includes a first charged particle beam column that irradiates a thin sample with a first charged particle beam, and a second charged particle beam column that irradiates an irradiation position of the first charged particle beam on the thin sample with a second charged particle beam. A sample holder as a base stage disposed on a sample stage, a motor-driven rotation driving section, a rotation stand rotatable about a flip axis by the driving of the rotation driving section, and a TEM grid that holds the thin sample. The TEM grid is movable within a surface perpendicular to an observation surface of the thin sample together with the rotation stand by being reciprocally driven around the flip axis by the driving section.
Method and Apparatus for Anisotropic Pattern Etching and Treatment
Methods and apparatuses for providing an anisotropic ion beam for etching and treatment of substrate are discussed. In one embodiment, a system for processing a substrate includes a chamber, a chuck assembly, an ion source, and a grid system. The ion source includes grid system interfaces both the chamber and the ion source and includes a plurality of holes through which ions are extracted from the ion source to form an ion beam. The grid system is oriented so the ion beam is directed into the chamber toward the substrate support, and the array of holes of the grid system is defined vertically by a y-axis and horizontally by an x-axis, The array of holes is defined by hole densities that vary vertically in the y-axis such that the ion beam is caused to have an energy density gradient that is defined vertically in the y-axis.
Actuator, Sample Positioning Device, and Charged Particle Beam System
An actuator has: a motor section; a ball spline having a finite stroke and equipped with a shaft capable of moving along its axis; an external screw thread formed on the shaft; a nut section having an internal screw thread engaging the external screw thread and operating to transmit the rotary force of the motor section to the shaft; and a case housing the motor section and the ball spline. The shaft has a contact section at its front end, the contact section being designed to make contact with the driven object. The contact section is lower than the shaft in thermal conductivity. Due to heat generated by the motor section, the shaft elongates along the axis of the shaft in a first direction, and the case elongates along the axis of the shaft in a second direction opposite to the first direction.
ELECTRON MICROSCOPE STAGE
A positioning system for an electron microscope includes a first carriage comprising a holder for holding a workpiece and a second carriage. The first carriage being coupled to one or more first drive units configured to position the workpiece along first, second, and third axes, and along a first tilt axis. The second carriage housing the one or more first drive units and being coupled to one or more second drive units configured to position the workpiece along a second tilt axis.
APPARATUS AND METHOD FOR NANOSCALE X-RAY IMAGING
System and method for nanoscale X-ray imaging. The imaging system comprises an electron source configured to generate an electron beam along a first direction; an X-ray source comprising a thin film anode configured to receive the electron beam at an electron beam spot on the thin film anode, and to emit an X-ray beam substantially along the first direction from a portion of the thin film anode proximate the electron beam spot, such that the X-ray beam passes through the sample specimen. The imaging apparatus further comprises an X-ray detector configured to receive the X-ray beam that passes through the sample specimen. Some embodiments are directed to an electron source that is an electron column of a scanning electron microscope (SEM) and is configured to focus the electron beam at the electron beam spot.
CRYOTRANSFER HOLDER AND WORKSTATION
A workstation is described for mounting specimens into a cryotransfer holder at cryogenic temperature. The workstation allows rotation about the cryotransfer holder axis to improve access to the sample placement area on the holder and to facilitate easy removal and retrieval of the sample after imaging. The cryotransfer holder includes a cylindrical dewar configured to maintain a constant center of mass about the holder axis regardless of orientation of the dewar.
Sample Chip Worktable and Retainer
A retainer is placed on a retainer holding portion formed on a sample chip worktable. With an operation of a button, a take-out support mechanism operates. That is, an upthrust pin moves upward. With this process, an orientation of a sample chip stored in the retainer is changed from a horizontal orientation to an inclined orientation. A plurality of openings through which the upthrust pin passes are formed in the retainer.
METHOD FOR LARGE-AREA 3D ANALYSIS OF SAMPLES USING GLANCING INCIDENCE FIB MILLING
Methods and apparatuses disclosed herein for large-area 3D analysis of samples using glancing incidence FIB milling. An example method at least includes milling, with a focused ion beam, a sample at a shallow angle and at a plurality of rotational orientations to remove a layer of the sample and to expose a surface, and after milling, imaging, with a charged particle beam, the exposed surface of the sample.
MULTI-SOURCE ION BEAM ETCH SYSTEM
Apparatus for a multi-source ion beam etching (IBE) system are provided herein. In some embodiments, a multi-source IBE system includes a multi-source lid comprising a multi-source adaptor and a lower chamber adaptor, a plurality of IBE sources coupled to the multi-source adaptor, a rotary shield assembly coupled to a shield motor mechanism configured to rotate the rotary shield, wherein the shield motor mechanism is coupled to a top portion of the multi-source lid, and wherein the rotary shield includes a body that has one IBE source opening formed through the body, and at least one beam conduit that engages the one IBE source opening in the rotary shield on one end, and engages the bottom portion of the IBE sources on the opposite end of the beam conduit.