Embodiments described herein relate to apparatus for performing electron beam reactive plasma etching (EBRPE). In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. In another embodiment, an electrode is movably disposed within a process volume of a process chamber and capable of being positioned at a non-parallel angle relative to a pedestal opposing the electrode. In another embodiment, a pedestal is movably disposed with a process volume of a process chamber and capable of being positioned at a non-parallel angle relative to an electrode opposing the pedestal. Electrons emitted from the electrode are accelerated toward a substrate disposed on the pedestal to induce etching of the substrate.

Provided is a charged particle beam system capable of preventing the data acquisition time from increasing. A control method for the system is also provided. The charged particle beam system includes: a beam blanker for blanking a charged particle beam; a sample stage on which a sample is tiltably held and thus can assume a tilt angle; a blanking controller for controlling the blanking of the charged particle beam and causing a pulsed beam having a duty ratio to be directed at the sample; and a tilt controller for controlling the tilt angle of the sample. The blanking controller sets the duty ratio of the pulsed beam based on the tilt angle of the sample.

Methods include providing a multi-pillar sample including at least a first pillar and a second pillar parallel with the first pillar, directing a charged particle beam to the first pillar, imaging the first pillar at a plurality of rotational positions by rotating the multi-pillar sample about a first pillar axis of the first pillar, directing the charged particle beam to the second pillar, and imaging the second pillar at a plurality of rotational positions by rotating the multi-pillar sample about a second pillar axis of the second pillar. Related apparatus for performing disclosed methods are disclosed. Multi-pillar samples are also disclosed.

Provided is a substrate holding device comprising: a holder that holds a substrate irradiated with an ion beam; and a driving device that rotates the holder around a predetermined axis to change an inclination of the held substrate with respect to the ion beam, wherein the driving device comprises: a power source that outputs power to rotate the holder; a reduction gear provided in the middle of a power transmission path from the power source to the holder; a first shaft member that rotates together with the holder by a power outputted from the reduction gear; a first detector that detects a rotational motion of the first shaft member; and a power control device that controls the power source based on a detection value of the first detector.

There is provided a sample holder capable of reducing positional deviation of a cartridge in the heightwise direction of a sample. The sample holder includes the cartridge and a holder base having a mounting portion for the cartridge. The mounting portion includes a placement surface, a first tilted surface, and a rotary drive mechanism for imparting a rotary force to the cartridge. The cartridge includes an opposing first tilted surface opposite to the first tilted surface of the mounting portion. As the rotary drive mechanism imparts the rotary force to the cartridge, the first tilted surface of the cartridge is pressed against the first tilted surface of the mounting portion, whereby the cartridge is pressed against the placement surface.

The present disclosure provides a method to adjust asymmetric velocity of a scan in a scanning ion beam etch process to correct asymmetry of etching between the inboard side and the outboard side of device structures on a wafer, while maintaining the overall uniformity of etch across the full wafer.

Provided is a sample milling apparatus capable of milling various samples efficiently. The sample milling apparatus includes an anode, a cathode for emitting electrons which are made to collide with gas molecules so that ions are generated, an extraction electrode for causing the generated ions to be extracted as an ion beam, and a focusing electrode disposed between the cathode and the extraction electrode and applied with a focusing voltage. The spatial profile of the ion beam is controlled by varying the focusing voltage applied to the focusing electrode.

A metal surface modification apparatus having a tilting unit includes holding jigs having respective lower parts having curved surfaces to hold the implants; a movable holding base provided with a plurality of receiving depressions to have curved surfaces corresponding to the curved surfaces of the lower parts; and a stationary pushing plate disposed on the movable holding base to cover the movable holding base, and configured to be moved relative to the movable holding base and to have a plurality of through holes positioned to face the receiving depressions.

A retainer is placed on a retainer holding portion formed on a sample chip worktable. With an operation of a button, a take-out support mechanism operates. That is, an upthrust pin moves upward. With this process, an orientation of a sample chip stored in the retainer is changed from a horizontal orientation to an inclined orientation. A plurality of openings through which the upthrust pin passes are formed in the retainer.

A sample holding device for studying light-driven reactions and a sample analysis method using the same are disclosed. The sample holding device comprises a main body, a supporting structure and a light source assembly. The main body has a channel which has a first end and a second end opposite to the first end, and a focusing lens which is located on the second end. The supporting structure is located on one end of the main body for sample supporting. The light source assembly is detachably disposed on the other end opposite to the end which is disposed with the supporting structure. The light source assembly emits a light beam into the first end of the channel. The light beam then irradiates the sample which locates on the supporting structure after passing through the focusing lens.