A charged particle beam device allowing an analysis position in a sample analyzable with an EBSD detector to be acquired beforehand, and allowing a sample to be adjusted to a desired analysis position in a short time. A charged particle beam device is provided with a charged particle source (111), a charged particle optical system (115), an EBSD detector (101), a sample stage (116), an image display unit (117) for displaying a portion of the sample observable with the EBSD detector and a non-observable portion of the sample such that said portions are distinguished from each other, an operation input unit (121) where a position to be observed by the EBSD detector is entered, and a control unit (118) for controlling a planar movement, an inclination movement and a rotation movement of the sample stage so as to allow the observation position entered from the operation input unit to be observed with the EBSD detector.

Pallets for transporting one or more glass substrates in a substantially vertical orientation through a sputtering system. In some cases, a pallet comprising a frame with an aperture and an adjustable grid array within the aperture. The adjustable grid array is configurable to hold a plurality of glass substrates of different shapes and/or sizes. In one case, the adjustable grid array comprises a system of vertical and horizontal support bars, wherein the vertical support bars configured to both support the plurality of glass substrates at their vertical edges, wherein the horizontal support bars are configured to support the plurality of glass substrates at their horizontal edges, wherein the ends of the horizontal support bars are slideably engaged with the vertical support bars.

In a charged particle beam device, a control unit performs processing for: operating a deflector based on movement information to move a visual field of a deflector from a first visual field to a second visual field; capturing the sample image with the second visual field to obtain a reference image; operating the deflector to move the visual field from the second visual field to the first visual field; operating the sample stage based on the movement information to move the visual field from the first visual field to a third visual field; capturing the sample image with the third visual field to obtain a comparison image; calculating a positional deviation amount between the reference image and the comparison image; determining whether the positional deviation amount is equal to or less than a designated positional deviation amount; and operating the sample stage based on the positional deviation amount.

The present invention relates to a diffractometer for charged-particle crystallography of a crystalline sample, in particular for electron crystallography of a crystalline sample. The diffractometer comprises a charged-particle source for generating a charged-particle beam along a charged-particle beam axis, a charged-particle-optical system for manipulating the charged-particle beam such as to irradiate the sample with the charged-particle beam and a charged-particle detection system at least for collecting a diffraction pattern of the sample based on the beam of charged-particles transmitted through the sample. The diffractometer further comprises a sample holder for holding the sample and a manipulator operatively coupled to the sample holder for positioning the sample relative to the beam axis. The manipulator comprises a rotation stage for tilting the sample holder with respect to the incident charged-particle beam around a tilt axis, and a multi-axes translation stage for moving the sample holder at least in a plane perpendicular to the tilt axis. The multi-axes translation stage is operatively coupled between the sample holder and the rotation stage such that the multi-axes translation stage is in a rotational system of the rotation stage and the sample holder is in a moving system of the multi-axes translation stage.

The system described herein relates to a method for operating a beam apparatus, such as a particle beam apparatus or laser beam apparatus, a computer program product and a beam apparatus for carrying out the method, and to an object holder for an object that, for example, is able to be arranged in a particle beam apparatus. The method includes generating a marking on an object holder using a laser beam of a laser beam device and/or using a particle beam of the particle beam apparatus, where the particle beam includes charged particles, arranging an object on the object holder, moving the object holder, positioning the particle beam and/or the laser beam in relative fashion in relation to the object using the marking, and processing, imaging and/or analyzing the object using the particle beam and/or the laser beam.

In order to improve the accuracy of stage movement in a charged particle beam apparatus, this stage movement control apparatus is characterized by comprising: a storage device in which overshoot amount data in which the movement distance of a stage and the overshoot amount of the stage are associated is stored; a movement target position setting unit which sets the movement target position of the stage; a stage movement amount calculation unit which calculates a stage movement amount that is an amount by which the stage moves to the movement target position in future; an overshoot estimation unit which, on the basis of the calculated stage movement amount and the overshoot amount data, estimates an overshoot amount corresponding to the stage movement amount; a movement target position correction unit which sets a corrected movement target position obtained by correcting the movement target position closer than the movement target position by the calculated overshoot amount; and a stage movement control unit which moves the stage to the corrected movement target position.

A stage device is disposed in a vacuum environment and moves a target placed on the stage device, the stage device including: a guide rail that is laid on a base; a carriage that moves along the guide rail; rolling elements that come into contact with the guide rail and the carriage and rotate along with the movement of the carriage; a table that is connected to a part of the carriage and moves along with the carriage; and a blocking cover that is provided to cover a normal direction of a guide surface of the guide rail and blocks foreign matter scattered from the guide rail, the carriage, or the rolling elements.

An e-beam apparatus is disclosed, the tool comprising an electron optics system configured to project an e-beam onto an object, an object table to hold the object, and a positioning device configured to move the object table relative to the electron optics system. The positioning device comprises a short stroke stage configured to move the object table relative to the electron optics system and a long stroke stage configured to move the short stroke stage relative to the electron optics system. The e-beam apparatus further comprises a magnetic shield to shield the electron optics system from a magnetic disturbance generated by the positioning device. The magnetic shield may be arranged between the positioning device and the electron optics system.

Introduced here is a plasma polymerization apparatus and process. Example embodiments include a vacuum chamber in a substantially symmetrical shape to a central axis. A rotation rack may be operable to rotate about the central axis of the vacuum chamber. Additionally, reactive species discharge mechanisms positioned around a perimeter of the vacuum chamber in a substantially symmetrical manner from the outer perimeter of the vacuum chamber may be configured to disperse reactive species into the vacuum chamber. The reactive species may form a polymeric multi-layer coating on surfaces of the one or more devices. Each layer may have a different composition of atoms to enhance the water resistance, corrosion resistance, and fiction resistance of the polymeric multi-layer coating.

The present disclosure provides a method to adjust asymmetric velocity of a scan in a scanning ion beam etch process to correct asymmetry of etching between the inboard side and the outboard side of device structures on a wafer, while maintaining the overall uniformity of etch across the full wafer.