The transporting apparatus of the present invention comprises an end effector including a hand and a plurality of vacuum holes installed in the hand; and a carrier located on the hand and for supporting a consumable part, wherein the carrier comprises one side for supporting a consumable part, the other surface facing the hand of the end effector, and a plurality of support blocks installed on the other surface and corresponding to the plurality of vacuum holes, wherein an inner space communicating with the vacuum hole is installed in the plurality of support blocks, and the inner space is evacuated by negative pressure provided from the plurality of vacuum holes.

Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature.

According to one embodiment, a plasma processing apparatus generates plasma between a lower electrode and an upper electrode. The plasma processing apparatus includes a processing table, a central top plate, an outer peripheral top plate, and a driver. The processing table is electrically connected to the lower electrode and includes a mounting surface on which a substrate to be treated is mounted. The central top plate is electrically connected to the upper electrode and includes a central surface facing the mounting surface. The outer peripheral top plate is electrically connected to the upper electrode and includes an outer peripheral surface facing the mounting surface and surrounds the outer periphery of the central surface. The driver relatively displaces the central top plate and the outer peripheral top plate.

Methods of manufacturing memory devices are provided. The method comprises pre-cleaning a top surface of a film stack, the film stack comprising alternating layers of a first material layer and a second material layer and having one or more of a memory hole and a slit pattern opening extending through the film stack; exposing the top surface of the film stack to a growth inhibitor; selectively depositing a silicon-containing dielectric layer in a region of the film stack; and densifying the silicon-containing dielectric layer. The processing method is performed in a processing tool without breaking vacuum.

A system and method that allows higher energy implants to be performed, wherein the peak concentration depth is shallower than would otherwise occur is disclosed. The system comprises an ion source, an accelerator, a platen and a platen orientation motor that allows large tilt angles. The system may be capable of performing implants of hydrogen ions at an implant energy of up to 5 MeV. By tilting the workpiece during an implant, the system can be used to perform implants that are typically performed at implant energies that are less than the minimum implant energy allowed by the system. Additionally, the resistivity profile of the workpiece after thermal treatment is similar to that achieved using a lower energy implant. In certain embodiments, the peak concentration depth may be reduced by 3 μm or more using larger tilt angles.

Exemplary methods of forming a coating of material on a substrate may include forming a plasma of a first precursor and an oxygen-containing precursor. The first precursor and the oxygen-containing precursor may be provided in a first flow rate ratio. The methods may include depositing a first layer of material on the substrate. While maintaining the plasma, the methods may include adjusting the first flow rate ratio to a second flow rate ratio. The methods may include depositing a second layer of material on the substrate.

Introduced here is a plasma polymerization apparatus and process. Example embodiments include a vacuum chamber in a substantially symmetrical shape to a central axis. A rotation rack may be operable to rotate about the central axis of the vacuum chamber. Additionally, reactive species discharge mechanisms positioned around a perimeter of the vacuum chamber in a substantially symmetrical manner from the outer perimeter of the vacuum chamber may be configured to disperse reactive species into the vacuum chamber. The reactive species may form a polymeric multi-layer coating on surfaces of the one or more devices. Each layer may have a different composition of atoms to enhance the water resistance, corrosion resistance, and fiction resistance of the polymeric multi-layer coating.

The problem addressed by the present disclosure is to provide a stage device, a charged particle beam device, and a vacuum device, with which it is possible to increase the speed and the acceleration of positioning and to suppress the leakage of a magnetic field. As a means to resolve this problem, a stage device 100 comprises a support stage 10, a floating mechanism 20, and a movement stage 30. The movement stage 30 has a propulsion-applying unit 36, and the support stage 10 has a propulsion-receiving unit 11. The stage device 100 is configured so that when the movement stage 30 moves and the propulsion-applying unit 36 contacts or approaches the propulsion-receiving unit 11, the propulsion-applying unit 36 applies propulsion in the movement direction to the propulsion-receiving unit 11.

Since wires connected to a linear motor are routed in a vacuum sample chamber, outgassing is generated from wire coating and efficiency of assembly operations is reduced. Further, there is a problem that thrust generation efficiency of the linear motor is reduced when a gap between a coil and a permanent magnet of the linear motor cannot be small. In order to solve the above problems, a linear motor for vacuum is provided, the linear motor for vacuum including: a mover having a permanent magnet; and a stator having a support member to which a coil is fixed, in which the support member includes a vacuum sealing portion that vacuum seals with a wall surface of a vacuum sample chamber, and a feed-through for supplying a current to the coil provided in the vacuum sample chamber.

The present invention provides a digital high-resolution detector for detecting X-ray, UV light or charged particles. In various embodiments, the digital detector comprises an array of CMOS or CCD pixels and a layer of conversion material on top of the array designed for converting incident X-ray, UV light or charged particles into photons for CMOS or CCD sensors to capture. The thin and high-resolution detector of the invention is particularly useful for monitoring and aligning beams in, and optimizing system performance of, an apparatus of charged-particle beam e.g. an electron microscope.