In a method for producing a TEM sample, an object is fastened to an element of an object holder such that a surface to be processed of the object is arranged substantially perpendicularly to an axis of rotation of the element. An ion beam is directed at the surface to be processed at grazing incidence, wherein the element adopts different rotational positions in relation to the axis of rotation, while the ion beam is directed at the surface to be processed.

The present disclosure provides an apparatus for vacuum deposition on a substrate. The apparatus includes a vacuum chamber having a first area and a first deposition area, one or more deposition sources at the first deposition area, wherein the one or more deposition sources are configured for vacuum deposition on at least a first substrate while the at least a first substrate is transported along a first transport direction past the one or more deposition sources, and a first substrate transport unit in the first area, wherein the first substrate transport unit is configured for moving the at least a first substrate within the first area in a first track switch direction, which is different from the first transport direction.

A sample carrier capable of preventing damage to a support stage on which a sample holder is placed while ensuring a sufficient level of conveyance speed includes a sample holder, a holder mounting member, and a transport portion. The transport portion has a drive source (constant-speed motor), a rotary member (second toothed wheel), a guide portion (linear guide), and a rod. The rotary member is rotated about its axis of rotation by the drive source. The guide portion operates to guide the holder mounting member in a linear direction perpendicular to the axis of rotation of the rotary member. The rod is rotatably coupled to the rotary member and to the holder mounting member and has a coupled portion coupled to the rotary member. At a midpoint of the range of movement of the holder mounting member, the shortest distance from the coupled portion to the guide portion is greatest.

An ion beam etching system includes an etching cavity, an etching electrode, and an electrode displacement apparatus used for enabling the electrode to change a working position in the etching cavity. The electrode displacement apparatus includes a dynamic sealing mechanism, a dynamic electrode balance counterweight mechanism, an electrode displacement transmission mechanism, and an electrode displacement driving mechanism. The etching cavity includes a cavity and a cavity cover connected with the cavity. The cavity is of an irregular shape. The cavity includes a partial cylindrical body, a side plate, a tapered transition portion, and a bottom plate. The partial cylindrical body is laterally sealed by means of the side plate. The bottom plate is connected to an end of the partial cylindrical body by means of the tapered transition portion and seals the end of the partial cylindrical body.

Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature.

A vacuum processing apparatus 100 includes: a vacuum chamber 1; a stage 2 placed inside the vacuum chamber 1, on which an object to be processed is placed; an internal guide rail 31 laid in the vacuum chamber 1 to guide the stage 2; a through-hole 103 made in a sidewall 102 of the vacuum chamber 1; a connecting rod 4 coupled to the stage 2 at one end and inserted in the through-hole 103, the other end being disposed outside the vacuum chamber 1; a movable member 5 connected to the other end of the connecting rod 4; a driving mechanism 8 disposed outside the vacuum chamber 1 to move the movable member 5; and a bellows 6 disposed between the movable member 5 and the sidewall 102, the bellows 6 following the movement of the movable member 5 while maintaining airtightness of the vacuum chamber 1.

The present invention refers to an apparatus (100) and a method for detecting characteristics of a probe. In an embodiment, the apparatus (100) comprises a vacuum chamber (104) and a beam generator (102) adapted to generate a beam of charged particles within the vacuum chamber (104). When the beam of charged particles falls onto the probe, interaction particles and/or interaction radiation are generated. The apparatus (100) further comprises an electromechanical unit (114) within the vacuum chamber (104) and a detector (110) comprising a plurality of detection units and being arranged on the electromechanical unit (114) allowing for the detector (110) to move from a first position (302) with respect to the beam generator (102) to a second position (304) with respect to the beam generator (102) and vice versa, upon a corresponding actuation of the electromechanical unit (114) performable from outside of the vacuum chamber (104).

Disclosed is a charged particle beam apparatus including a stage supporting a sample holder; a stage driving mechanism; a sample chamber; a focused ion beam column; an electron beam column; a detector detecting secondary ions or secondary electrons generated from the sample; a reading unit reading identification information attached to the sample holder; a memory unit storing holder shape information indicating a correspondence relationship between the identification information and a shape of the sample holder, and design information that is shape information of an internal structure of the sample chamber; and a stage driving range limiting unit limiting a driving range of the stage supporting the sample holder on the basis of the shape of the sample holder that is acquired from the identification information read by the reading unit and the holder shape information, and on the basis of a shape of the internal structure.

Since wires connected to a linear motor are routed in a vacuum sample chamber, outgassing is generated from wire coating and efficiency of assembly operations is reduced. Further, there is a problem that thrust generation efficiency of the linear motor is reduced when a gap between a coil and a permanent magnet of the linear motor cannot be small. In order to solve the above problems, a linear motor for vacuum is provided, the linear motor for vacuum including: a mover having a permanent magnet; and a stator having a support member to which a coil is fixed, in which the support member includes a vacuum sealing portion that vacuum seals with a wall surface of a vacuum sample chamber, and a feed-through for supplying a current to the coil provided in the vacuum sample chamber.

Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature.