A system and method for etching workpieces in a uniform manner are disclosed. The system includes a semiconductor processing system that generates a ribbon ion beam, and a workpiece holder that scans the workpiece through the ribbon ion beam. The workpiece holder includes a portion that extends beyond the workpiece, referred to as a halo. The halo may be independently heated to compensate for etch rate non-uniformities. In some embodiments, the halo may be independently biased such that its potential is different from the potential applied to the workpiece. In certain embodiments, the halo may be divided into a plurality of thermal zones that can be separately controlled. In this way, various etch rate non-uniformities may be addressed by controlling the potential and/or temperature of the various thermal zones of the halo.

A sample holder tip for use in transmission electron microscopy (TEM) or scanning electron microscopy (SEM) for performing in-situ experiments is described which facilitates in situ analysis of air-sensitive samples and allows physical manipulation of the sample. This includes, but is not limited to translation, rotation, electrical biasing, and heating/cooling for one or more individual cradles. The sample holder tip incorporates a compact design which eases sample loading and enables direct linkages between consecutive cradles, allowing a single tilt actuator to rotate each cradle around its respective eucentric position. Each of the connecting wires incorporates one or more bends or kinks which enable conductive access to the sample holder tip while also preserving the ability to also retract/extend the tip and tilt individual cradles with at least two degrees of freedom.

A plasma processing apparatus includes a process chamber, a substrate support chuck configured to support a substrate in the process chamber, the substrate support chuck including an upper cooling channel and a lower cooling channel that are symmetrically separated from each other, and a support chuck temperature controller configured to supply a first coolant to the upper cooling channel and to supply a second coolant to the lower cooling channel.

An e-beam inspection tool is disclosed, the tool comprising, an electron optics system configured to generate an electron beam, an object table configured to hold a specimen, a positioning device configured to position the object table, the positioning device comprising an actuator, wherein the positioning device further comprises a heating device configured to generate a heat load and a heat load controller to control the generated heat load at least partly based on an actuator heat load generated in the actuator.

Provided is a mirror electronic inspection device which is a defect inspection device for detecting a defect of a semiconductor substrate or the like, and evaluates temperature dependence of the defect in a vacuum. A heating stage including a heater (heat generating element) covered with an electrically insulated insulating material, a heater base on which a sample is mounted, and a heat shielding plate and equipotential surface is mounted on a moving stage installed in a sample chamber of a device via an electrically insulated and thermally insulated fixing member. A heater power supply is connected to the heater (heat generating element), and a sample application power supply is connected to the heater base. The heater power supply and the sample application power supply are electrically separated.

A system for controlling a temperature of a substrate during treatment in a substrate processing system comprises a substrate support including first and second components, first and second heaters, and first and second heat sinks. The first component includes an upper surface at least partially defining a center zone. The second component is arranged radially outside of and below the first component. The second component includes an upper surface at least partially defining a radially-outer zone. The first and second components are spaced apart and define a gap between them. The first and second heaters are configured to heat the first and second components, respectively. The first heat sink has one end in thermal communication with the first component. The second heat sink has one end in thermal communication with the second component.

A wafer holder includes a mounting table that has a mounting surface for a workpiece at a top, a supporting member that supports the mounting table from a lower side, a first cylindrical member one end of which is joined hermetically to a lower surface of the mounting table, and a second cylindrical member that is provided inside the first cylindrical member and one end of which is joined hermetically to the lower surface of the mounting table.

Temperatures of cryo-electron microscopy samples are assessed based on images portions associated with high temperature superconductor (HTSC) areas or other thermal sensor materials that are thermally coupled to or thermally proximate the samples. Such thermal areas can be provided on sample mounts such as metallic grids, carbon films, or on sample stages. In examples using HTSCs, HTSCs having critical temperatures between −175° C. and −135° C. are typically used.

A system for ultra-high temperature in-situ fretting fatigue experiment, includes a heat preservation cover defining a, a heating device arranged in the mounting space, a first test sample, a second test sample, and a clamping device arranged in the mounting space. The first test sample and the second test sample are arranged at an upper end of the heating device along a horizontal direction. A mortise is formed at an end of the first test sample facing towards the second test sample. A tenon mating with the mortise is formed at an end of the second test sample facing towards the first test sample. The clamping device is configured to be clamped at two ends of the mated first test sample and second test sample and to apply a periodically reciprocating loading along a length direction of the first test sample and the second test sample.

A roll to roll fabrication apparatus includes: a vacuum chamber having an installation chamber and a process chamber; a preprocessing unit in the installation chamber to process a surface of a film which is transferred to enhance a film characteristic in a subsequent CVD process; a process drum in the process chamber to wind the film thereon; a process treatment unit in the process chamber to form a layer by performing a CVD process on the film wound on the process drum; and a plurality of heaters in the installation chamber and the process chamber to gradually increase a temperature of the film wound on the process drum to prevent application of a thermal impact to the film due to the high-temperature process drum.