Systems and methods of enhancing imaging resolution by reducing crosstalk between detection elements of a secondary charged-particle detector in a multi-beam apparatus are disclosed. The multi-beam apparatus may comprise an electro-optical system for projecting a plurality of secondary charged-particle beams from a sample onto a charged-particle detector. The electro-optical system may include a first pre-limit aperture plate comprising a first aperture configured to block peripheral charged-particles of the plurality of secondary charged-particle beams, and a beam-limit aperture array comprising a second aperture configured to trim the plurality of secondary charged-particle beams. The charged-particle detector may include a plurality of detection elements, wherein a detection element of the plurality of detection elements is associated with a corresponding trimmed beam of the plurality of secondary charged-particle beams.

Systems and methods are provided for charged particle detection. The detection system can comprise a signal processing circuit configured to generate a set of intensity gradients based on electron intensity data received from a plurality of electron sensing elements. The detection system can further comprise a beam spot processing module configured to determine, based on the set of intensity gradients, at least one boundary of a beam spot; and determine, based on the at least one boundary, that a first set of electron sensing elements of the plurality of electron sensing elements is within the beam spot. The beam spot processing module can further be configured to determine an intensity value of the beam spot based on the electron intensity data received from the first set of electron sensing elements and also generate an image of a wafer based on the intensity value.

A charged particle beam device which prevents an appearance of a shading contrast due to azimuth discrimination and obtains a clear magnetic domain contrast image with a high resolution and a high throughput. The charged particle beam device includes an electron beam source; a sample stage; an objective lens configured to focus electron beams on a sample; a detector that is mounted on a charged particle beam source side with respect to the objective lens and separately detects secondary electrons emitted in azimuth angle ranges of two or more different azimuths for the same observation region; an image processing and image management device including an image processing unit configured to perform synthesis after performing shading correction and contrast adjustment on an image obtained by detecting a first emission azimuth and an image obtained by detecting a second emission azimuth; an image database; and an image display unit.

A charged particle beam device for imaging and/or inspecting a sample is described. The charged particle beam device includes a beam emitter for emitting a primary charged particle beam; a retarding field device for retarding the primary beam before impinging on the sample, the retarding field device including an objective lens and a proxy electrode; and a first detector for off-axial backscattered particles between the proxy electrode and the objective lens. The charged particle beam device is adapted for guiding the primary beam along an optical axis to the sample for releasing signal particles. The proxy electrode includes one opening allowing a passage of the primary charged particle beam and of the signal particles, wherein the one opening is sized to allow a passage of charged particles backscattered from the sample at angles from 0° to 20° or above relative to the optical axis. Further, a method for imaging and/or inspecting a sample with a charged particle beam device is described.

An electron beam inspection system is disclosed, in accordance with one or more embodiments of the present disclosure. The inspection system may include an electron beam source configured to generate one or more primary electron beams. The inspection system may also include an electron-optical column including a set of electron-optical elements configured to direct the one or more primary electron beams to a sample. The inspection system may further include a detection assembly comprising: a scintillator substrate configured to collect electrons emanating from the sample, the scintillator substrate configured to generate optical radiation in response to the collected electrons; one or more light guides; one or more reflective surfaces configured to receive the optical radiation and direct the optical radiation along the one or more light guides; and one or more detectors configured to receive the optical radiation from the light guide.

A particle beam system includes a particle source to produce a first beam of charged particles. The particle beam system also includes a multiple beam producer to produce a plurality of partial beams from a first incident beam of charged particles. The partial beams are spaced apart spatially in a direction perpendicular to a propagation direction of the partial beams. The plurality of partial beams includes at least a first partial beam and a second partial beam. The particle beam system further includes an objective to focus incident partial beams in a first plane so that a first region, on which the first partial beam is incident in the first plane, is separated from a second region, on which a second partial beam is incident. The particle beam system also a detector system including a plurality of detection regions and a projective system.

A charged particle beam device for imaging and/or inspecting a sample is described. The charged particle beam device includes a beam emitter for emitting a primary charged particle beam, the charged particle beam device adapted for guiding the primary charged particle beam along an optical axis to the sample for releasing signal particles; a retarding field device for retarding the primary charged particle beam before impinging on the sample, the retarding field device including an objective lens and a proxy electrode, wherein the proxy electrode includes an opening allowing a passage of the primary charged particle beam and of the signal particles; a first detector for off-axial backscattered particles between the proxy electrode and the objective lens; and a pre-amplifier for amplifying a signal of the first detector, wherein the pre-amplifier is at least one of (i) integrated with the first detector, (ii) arranged adjacent to the first detector inside a vacuum housing of the charged particle beam device, and (iii) fixedly mounted in a vacuum chamber of the charged particle beam device. Further, a method for imaging and/or inspecting a sample with a charged particle beam device is described.

A scanning electron microscopy system with improved image beam stability is disclosed. The system includes an electron beam source configured to generate an electron beam and a set of electron-optical elements to direct at least a portion of the electron beam onto a portion of the sample. The system includes an emittance analyzer assembly. The system includes a splitter element configured to direct at least a portion secondary electrons and/or backscattered electrons emitted by a surface of the sample to the emittance analyzer assembly. The emittance analyzer assembly is configured to image at least one of the secondary electrons and/or the backscattered electrons.

Systems and methods to focus and align multiple electron beams are disclosed. A camera produces image data of light from electron beams that is projected at a fiber optics array with multiple targets. An image processing module determines an adjustment to a voltage applied to a relay lens, a field lens, or a multi-pole array based on the image data. The adjustment minimizes at least one of a displacement, a defocus, or an aberration of one of the electron beams. Using a control module, the voltage is applied to the relay lens, the field lens, or the multi-pole array.

A secondary projection imaging system in a multi-beam apparatus is proposed, which makes the secondary electron detection with high collection efficiency and low cross-talk. The system employs one zoom lens, one projection lens and one anti-scanning deflection unit. The zoom lens and the projection lens respectively perform the zoom function and the anti-rotating function to remain the total imaging magnification and the total image rotation with respect to the landing energies and/or the currents of the plural primary beamlets. The anti-scanning deflection unit performs the anti-scanning function to eliminate the dynamic image displacement due to the deflection scanning of the plural primary beamlets.