An ion collector includes a plurality of segments and a plurality of integrators. The plurality of segments are physically separated from one another and spaced around a substrate support. Each of the segments includes a conductive element that is designed to conduct a current based on ions received from a plasma. Each of the plurality of integrators is coupled to a corresponding conductive element. Each of the plurality of integrators is designed to determine an ion distribution for a corresponding conductive element based, at least in part, on the current conducted at the corresponding conductive element. An example benefit of this embodiment includes the ability to determine how uniform the ion distribution is across a wafer being processed by the plasma.

A particle beam system includes a particle source to produce a first beam of charged particles. The particle beam system also includes a multiple beam producer to produce a plurality of partial beams from a first incident beam of charged particles. The partial beams are spaced apart spatially in a direction perpendicular to a propagation direction of the partial beams. The plurality of partial beams includes at least a first partial beam and a second partial beam. The particle beam system further includes an objective to focus incident partial beams in a first plane so that a first region, on which the first partial beam is incident in the first plane, is separated from a second region, on which a second partial beam is incident. The particle beam system also a detector system including a plurality of detection regions and a projective system.

An ion collector includes a plurality of segments and a plurality of integrators. The plurality of segments are physically separated from one another and spaced around a substrate support. Each of the segments includes a conductive element that is designed to conduct a current based on ions received from a plasma. Each of the plurality of integrators is coupled to a corresponding conductive element. Each of the plurality of integrators is designed to determine an ion distribution for a corresponding conductive element based, at least in part, on the current conducted at the corresponding conductive element. An example benefit of this embodiment includes the ability to determine how uniform the ion distribution is across a wafer being processed by the plasma.

The present disclosure is to provide a charged particle beam device capable of achieving both high resolution by setting of a short WD and improvement of detection efficiency when setting a long WD. According to an aspect for achieving the above-described object, there is suggested a charged particle beam device including: an objective lens for converging a charged particle beam emitted from a charged particle source; a sample stage having a first driving mechanism for moving a sample to be irradiated with the charged particle beam between a first position and a second position more separated from the objective lens than the first position; a detection surface for detecting charged particles emitted from the sample; and a second driving mechanism for moving the detection surface between within a movable range of the sample between the first position and the second position and out of the movable range of the sample.

Systems and methods are provided for charged particle detection. The detection system can comprise a signal processing circuit configured to generate a set of intensity gradients based on electron intensity data received from a plurality of electron sensing elements. The detection system can further comprise a beam spot processing module configured to determine, based on the set of intensity gradients, at least one boundary of a beam spot; and determine, based on the at least one boundary, that a first set of electron sensing elements of the plurality of electron sensing elements is within the beam spot. The beam spot processing module can further be configured to determine an intensity value of the beam spot based on the electron intensity data received from the first set of electron sensing elements and also generate an image of a wafer based on the intensity value.

A particle beam system includes a particle source to produce a first beam of charged particles. The particle beam system also includes a multiple beam producer to produce a plurality of partial beams from a first incident beam of charged particles. The partial beams are spaced apart spatially in a direction perpendicular to a propagation direction of the partial beams. The plurality of partial beams includes at least a first partial beam and a second partial beam. The particle beam system further includes an objective to focus incident partial beams in a first plane so that a first region, on which the first partial beam is incident in the first plane, is separated from a second region, on which a second partial beam is incident. The particle beam system also a detector system including a plurality of detection regions and a projective system.

The present invention discloses an imaging device, an imaging method, and an imaging system, belonging to the field of sample image data acquisition and imaging technology. The imaging device includes: a charged particle source, a convergence system, a scanning control system, a detection module, and a spectral analysis module disposed below the detection module, where the detection module includes a plurality of pixelated detector units; and the detection module is provided with a hole thereon. The diffraction pattern is obtained by using the detection module, and the spectral analysis module performs spectral analysis on a charged particle beam passing through the hole, so as to obtain the diffraction pattern and spectral signal simultaneously by one scanning. The imaging method of the present invention is based on a hollow ptychography method, which enables toper form imaging on the diffraction pattern obtained through the detection module, with good imaging effects.

Multi-beam effects which reduce the accuracy, or the speed of a wafer inspection are corrected dependent on an inspection position using an improved multi-beam system and a wafer inspection method using the multi-beam system. The multi-beam system comprises a mechanism for influencing and homogenising an extraction field dependent on the inspection position, for example dependent on a distance from a wafer edge.

An inspection device includes an emission unit of first charging particles. A deflection unit deflects the first charging particles to scan a surface of a target object with the first charging particles. A detection unit detects second charging particles generated from the surface of the target object receiving the first charging particles. An image generation unit generates an image of the surface of the target object based on a detection result of the second charging particles by the detection unit. A control unit controls a scan direction of the first charging particles. A calculation unit detects normal directions to a contour of an uneven portion on the surface of the target object in a first image obtained by scanning in a first scan direction. The calculation unit calculates a frequency of a first angle formed between a reference axis of the first image and a normal direction of each of a plurality of unit regions. The calculation unit determines the normal direction corresponding to a most frequent value of the first angle among the normal directions as a second scan direction. The calculation unit calculates a height of the uneven portion based on a second image obtained by scanning in the second scan direction.

An electron microscope comprising: A specimen holder, for holding a specimen; An electron beam column, for producing an array of electron beams and concurrently irradiating an array of target areas of said specimen therewith; A scanning assembly, for producing relative scanning motion of said beam array with respect to the specimen; A detector, for detecting radiation emanating from the specimen in response to said irradiation,
wherein said detector is: A backscattered electron detector that can be disposed proximal to the specimen at a side thereof facing said electron beam column; Provided with an array of apertures that allow passage of said electron beams from said column to the specimen; Provided with a functionally sub-divided detection surface that enables segregated detection of a backscattered electron flux produced by each individual beam.