Disclosed are methods for optimized sub-sampling in an electron microscope. With regard at least to utilization of electron dose budgets, of time for acquisition of measurements, and of computing/processing capabilities, very high efficiencies can be achieved by informing and/or adapting subsequent sub-sampling measurements according to one or more earlier-acquired sparse datasets and/or according to analyses thereof.

A method of forming a multipole device (100) for influencing an electron beam (11) is provided. The method is carried out in an electron beam apparatus (200) that comprises an aperture body (110) having at least one aperture opening (112). The method comprises directing the electron beam (11) onto two or more surface portions of the aperture body (110) on two or more sides of the at least one aperture opening (112) to generate an electron beam-induced deposition pattern (120) configured to act as a multipole in a charged state, particularly configured to act as a quadrupole, a hexapole and/or an octupole. The electron beam-induced deposition pattern (120) can be an electron beam-induced carbon or carbonaceous pattern. Further provided are methods of influencing an electron beam in an electron beam apparatus, particularly with a multipole device as described herein. Further provided is a multipole device for influencing an electron beam in an electron beam apparatus in a predetermined manner.

A pattern inspection method includes scanning a plurality of patterns on a substrate with N charged particle beams and detecting secondary electrons respectively generated from each of the plurality of patterns to acquire N SEM images, determining a distribution of gray level values for each of the acquired N SEM images, selecting M gray levels from the distributions of the N gray levels, selecting a first gray level value from a first one of the M distributions, and comparing it to the corresponding first gray level value of the of the other M1 distributions, and determining that an abnormality has occurred in the charged particle beam corresponding to the first one of the M distributions when the difference between the first value of the first one of the M distributions and the other M1 distributions is greater than a predetermined threshold value.

A scanning electron microscope according to the present invention includes: an electron source that produces an electron beam; a trajectory dispersion unit that disperses the trajectory of an electron beam of electrons with a different energy value; a selection slit plate having a selection slit that selects the energy range of the dispersed electron beam; and a transmittance monitoring unit that monitors the transmittance of an electron beam, which is being transmitted through the selection slit. Accordingly, there can be provided a scanning electron microscope equipped with an energy filter that implements a stable reduction in energy distribution.

An ion implantation apparatus includes an ion source that is capable of generating a calibration ion beam including a multiply charged ion which has a known energy corresponding to an extraction voltage, an upstream beamline that includes amass analyzing magnet and a high energy multistage linear acceleration unit, an energy analyzing magnet, a beam energy measuring device that measures an energy of the calibration ion beam downstream of the energy analyzing magnet, and a calibration sequence unit that produces an energy calibration table representing a correspondence relation between the known energy and the energy of the calibration ion beam measured by the beam energy measuring device. An upstream beamline pressure is adjusted to a first pressure during an ion implantation process, and is adjusted to a second pressure higher than the first pressure while the energy calibration table is produced.

A rotary module for a measuring device of an accelerator facility includes a first radial bearing including a first bearing side configured to be paired with an accelerator-side flange connection and further including a second bearing side configured to receive the measuring device on the first radial bearing in a bearing manner such that the measuring device is connected to the accelerator facility by the first radial bearing; and a drive configured to control a rotational movement of the measuring device about an axis of rotation.

A method of processing a trench, via, hole, recess, void, or other feature that extends a depth into a substrate to a base or bottom and has an opening by irradiation with an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials at the base or bottom of the opening.

Provided is a method of adjusting an electron-beam irradiated area in an electron beam irradiation apparatus that deflects an electron beam with a deflector to irradiate an object with the electron beam, the method including: emitting an electron beam while changing an irradiation position on an adjustment plate by controlling the deflector in accordance with an electron beam irradiation recipe, the adjustment plate detecting a current corresponding to the emitted electron beam; acquiring a current value detected from the adjustment plate; forming image data corresponding to the acquired current value; determining whether the electron-beam irradiated area is appropriate based on the formed image data; and updating the electron beam irradiation recipe when the electron-beam irradiated area is determined not to be appropriate.

A charged particle beam device includes a plurality of detectors configured to detect one or more signal charged particle beams caused by irradiation on a sample with one or more primary charged particle beams, and a control system. The control system is configured to measure an intensity distribution of the one or more signal charged particle beams detected by the plurality of detectors, and correct the intensity distribution by using a correction function. The control system is configured to generate an image based on the corrected intensity distribution.

A multi charged particle beam writing method includes calculating an offset dose to irradiate all the small regions by multiplying one beam dose equivalent to a maximum irradiation time of multi-beams of each pass in multiple writing by a maximum number of defective beams being always ON to irradiate one of the small regions; calculating an incident dose, in addition to the offset dose, for each of the small regions; and performing multiple writing, using multi-beams including a defective beam being always ON, such that a beam of a total dose, between the incident dose and the offset dose, irradiates a corresponding small region for each small region, while switching a beam for each pass of the multiple writing, and controlling an irradiation time equivalent to the offset dose by a common blanking mechanism collectively blanking-controlling the multi-beams.