The present disclosure provides a method and a system therefore for processing wafer. The method includes: monitoring a distribution of particles in a chamber while processing the wafer; determining at least one parameter according to the distribution of the particles for configuring at least one device of the chamber; configuring the at least one device of the chamber according to the at least one parameter; and processing another wafer based on a recipe after configuring the at least one device of the chamber.

An optical height detection system in a charged particle beam inspection system. The optical height detection system includes a projection unit including a modulated illumination source, a projection grating mask including a projection grating pattern, and a projection optical unit for projecting the projection grating pattern to a sample; and a detection unit including a first detection grating mask including a first detection grating pattern, a second detection grating mask including a second detection grating pattern, and a detection optical system for forming a first grating image from the projection grating pattern onto the first detection grating mask and forming a second grating image from the projection grating pattern onto the second detection grating masks. The first and second detection grating patterns at least partially overlap the first and second grating images, respectively.

The invention relates to a method of examining a sample using a charged particle microscope, comprising the steps of providing a charged particle beam, as well as a sample, and scanning said charged particle beam over said sample. A first detector is used for detecting emissions of a first type from the sample in response to the beam scanned over the sample. Using spectral information of detected emissions of the first type, a plurality of mutually different phases are assigned to said sample. An image representation of said sample is provided, wherein said image representation contains different color hues. The color hues are selected from a pre-selected range of consecutive color hues in such a way that the selected color hues comprise mutually corresponding intervals within said pre-selected range of consecutive color hues.

A method and apparatus for detection of charged particles in spectroscopy. Charged particles, received from an energy dispersive spectroscopic analyser as a charged particle beam, are accelerated towards a detector. The accelerated charged particles are received at an array of detecting pixels, the array of detecting pixels forming the detector. The charged particles arriving at the detector have a spread in the energy dispersive direction.

A ranging apparatus for use in a plasma processing chamber having an internal space and a window is disclosed. The ranging apparatus includes at least one external light emitting device disposed external to the plasma processing chamber. The external light emitting device emits at least one source light beam to the internal space through the window. The ranging apparatus includes a base wafer disposed on a stage in the internal space. The ranging apparatus includes at least one optical circuit fixed to the base wafer. The optical circuit deflects the source light beam to a target in the internal space, and deflects a reflection light beam to the window. The ranging apparatus includes at least one external light receiving device disposed external to the plasma processing chamber. The external light receiving device receives the deflected reflection light beam through the window.

Provided is an electron beam irradiation apparatus including: an aligner configured to perform an alignment of an electron beam by deflecting the electron beam; a deflector having a plurality of electrodes and configured to deflect the electron beam after passing through the aligner; and an adjuster configured to adjust deflection caused by the aligner, wherein the adjuster is configured to perform, on each of the plurality of electrodes, detecting an image of the electron beam by applying a test voltage to one of the plurality of electrodes and applying a reference voltage to the other electrodes, determine a position shift of the electron beam based on each position of the image of the electron beam corresponding to each electrode, and adjust deflection of the aligner so as to cancel the position shift of the electron beam.

Provided is an ion milling device capable of improving the reproducibility of an ion distribution. An ion milling device includes: an ion source (1); a sample stage (2) on which a sample (4) to be processed by being irradiated with an unfocused ion beam from the ion source (1) is placed; and a drive unit (8) configured to be arranged between the ion source (1) and the sample stage (2), and to move a linear ion beam measuring member (7) extending in a first direction to a second direction orthogonal to the first direction, in which the drive unit (8) moves the ion beam measuring member (7) within an emission range of the ion beam in a state where the ion beam is outputted from the ion source (1) under a first emission condition, and an ion beam current flowing through the ion beam measuring member (7) is measured by irradiating the ion beam measuring member (7) with the ion beam.

Analyzing a sidewall of a hole milled in a sample to determine thickness of a buried layer includes milling the hole in the sample using a charged particle beam of a focused ion beam (FIB) column to expose the buried layer along the sidewall of the hole. After milling, the sidewall of the hole has a known slope angle. From a perspective relative to a surface of the sample, a distance is measured between a first point on the sidewall corresponding to an upper surface of the buried layer and a second point on the sidewall corresponding to a lower surface of the buried layer. The thickness of the buried layer is determined using the known slope angle of the sidewall, the distance, and the angle relative to the surface of the sample.

A substrate processing system includes: a substrate processing apparatus including a stage on which a substrate and an annular member are placed; a substrate transport mechanism including a substrate holder; a distance sensor provided in the substrate holder; and a control device, wherein the substrate transport mechanism is configured to place a jig substrate having a reference surface as a reference for a height of the annular member on the stage, wherein the distance sensor is configured to measure a distance from the substrate holder positioned above the stage to the reference surface of the jig substrate and a distance from the substrate holder to the annular member, and wherein the control device is configured to estimate the height of the annular member based on a measurement result of the distance to the reference surface and a measurement result of the distance to the annular member.

Roughness measurement corrects a machine difference utilizing first PSD data indicating power spectral density of a line pattern measured for a line pattern formed on a wafer for machine difference management by a reference machine in roughness index calculation and second PSD data indicating power spectral density of a line pattern measured for the line pattern formed on the wafer for machine difference management by a correction target machine are used to obtain a correction method for correcting the power spectral density of the second PSD data to the power spectral density of the first PSD data, power spectral density of a line pattern is measured as third PSD data from a scanning image of the line pattern, and corrected power spectral density obtained by correcting the power spectral density of the third PSD data by the obtained correction method is calculated.