The present disclosure provides a method and a system therefore for processing wafer. The method includes: monitoring a distribution of particles in a chamber while processing the wafer; determining at least one parameter according to the distribution of the particles for configuring at least one device of the chamber; configuring the at least one device of the chamber according to the at least one parameter; and processing another wafer based on a recipe after configuring the at least one device of the chamber.

Embodiments disclosed herein include a processing tool for measuring neutral radical concentrations. In an embodiment, the processing tool comprises a processing chamber, and a neutral radical mass spectrometry (NRMS) analyzer fluidically coupled to the processing chamber. In an embodiment, the NRMS analyzer comprises a first chamber fluidically coupled to the processing chamber, where the first chamber comprises a modulator, and a second chamber fluidically coupled to the first chamber, where the second chamber is a residual gas analyzer or a mass spectrometer. In an embodiment, an unobstructed line of sight passes from the processing chamber to the second chamber.

A measuring device is provided. The measuring device includes a base substrate, sensor electrodes, a temperature sensor, a high frequency oscillator, C/V conversion circuits for generating voltage signals corresponding to electrostatic capacitances of the sensor electrodes, an A/D converter for converting the voltage signals to digital values, a calculation unit for calculating measurement values indicating the electrostatic capacitances based on the digital values, and phase control circuits connected between the sensor electrodes and the high-frequency oscillator. Each of the conversion circuits includes an operational amplifier, and the high-frequency oscillator is connected to a non-inverting input terminal of the amplifier and is connected to an inverting input terminal thereof through a corresponding phase control circuit. The calculation unit stores parameters for setting admittances of the phase control circuits in association with temperatures and adjusts the admittances of the phase control circuits using a parameter associated with a detected temperature.

Embodiments of the present invention provide apparatus, systems and methods for measuring dissociation of a process gas generated by a RPS. In one embodiment, a method of measuring dissociation of a process gas includes receiving a process gas from a RPS, the process gas including a polyatomic molecule that dissociates into at least one free radical. The method further includes irradiating the process gas with IR radiation at one or more wavelengths, detecting the IR radiation that passes through the process gas, and determining a degree of dissociation of the polyatomic molecule in the process gas based, at least in part, on the detected IR radiation. In one embodiment, the method further comprises modifying one or more settings of the RPS, based, at least in part, on the determined degree of dissociation.

A method and apparatus for detection of charged particles in spectroscopy. Charged particles, received from an energy dispersive spectroscopic analyser as a charged particle beam, are accelerated towards a detector. The accelerated charged particles are received at an array of detecting pixels, the array of detecting pixels forming the detector. The charged particles arriving at the detector have a spread in the energy dispersive direction.

Provided is a plasma etching method which enables etching with high accuracy while controlling and reducing surface roughness of a transition metal film. The etching is performed for the transition metal film, which is formed on a sample and contains a transition metal element, by a first step of isotropically generating a layer of transition metal oxide on a surface of the transition metal film while a temperature of the sample is maintained at 100° C. or lower, a second step of raising the temperature of the sample to a predetermined temperature of 150° C. or higher and 250° C. or lower while a complexation gas is supplied to the layer of transition metal oxide, a third step of subliming and removing a reactant generated by an reaction between the complexation gas and the transition metal oxide formed in the first step while the temperature of the sample is maintained at 150° C. or higher and 250° C. or lower, and a fourth step of cooling the sample.

Plasma processing systems and methods are disclosed. The plasma processing system includes a high-frequency generator configured to deliver power to a plasma chamber and a low-frequency generator configured to deliver power to the plasma chamber. A filter is coupled between the plasma chamber and the high-frequency generator, and the filter suppresses mixing products of high frequencies produced by the high-frequency generator and low frequencies produced by the low-frequency generator.

An apparatus for and a method of inspecting a substrate in which a charged particle beam is arranged to impinge on a portion of the substrate and a first light beam having a first wavelength and a second light beam having a second wavelength different from the first wavelength are also arranged to impinge on the portion of the substrate.

The present disclosure relates to a plasma generation system with a dielectric window, an inductive coil disposed on the dielectric window, a gas distribution element disposed on the dielectric window, and a gas conditioning system coupled to the gas distribution element. The gas distribution element is configured to discharge a thermally conditioned gas on the dielectric window and regulate a temperature across the dielectric window. The gas conditioning system is configured to supply the thermally conditioned gas to the gas distribution element.

Analyzing a sidewall of a hole milled in a sample to determine thickness of a buried layer includes milling the hole in the sample using a charged particle beam of a focused ion beam (FIB) column to expose the buried layer along the sidewall of the hole. After milling, the sidewall of the hole has a known slope angle. From a perspective relative to a surface of the sample, a distance is measured between a first point on the sidewall corresponding to an upper surface of the buried layer and a second point on the sidewall corresponding to a lower surface of the buried layer. The thickness of the buried layer is determined using the known slope angle of the sidewall, the distance, and the angle relative to the surface of the sample.