Embodiments herein are directed to localized stress modulation by implanting a first side of a substrate to reduce in-plane distortion along a second side of the substrate. In some embodiments, a method may include providing a substrate, the substrate comprising a first main side opposite a second main side, wherein a plurality of features are disposed on the first main side, performing a metrology scan to the first main side to determine an amount of distortion to the substrate due to the formation of the plurality of features, and depositing a stress compensation film along the second main side of the substrate, wherein a stress and a thickness of the stress compensation film is determined based on the amount of distortion to the substrate. The method may further include directing ions to the stress compensation film in an ion implant procedure.

A charged particle beam apparatus acquires an image that is not affected by movement of a stage at a high speed. The apparatus includes: a charged particle source for irradiating a sample with a charged particle beam; a stage on which the sample is placed; a measurement unit for measuring a movement amount of the stage; a deflector; a deflector offset control unit, which is a feedback control unit for adjusting a deflection amount of the deflector according to the movement amount of the stage; a plurality of detectors for detecting secondary charged particles emitted from the sample by irradiation of the charged particle beam; a composition ratio calculation unit that calculates composition ratios of signals output from the detectors based on the deflection amount adjusted by the feedback control unit; and an image generation unit for generating a composite image by compositing the signals using the composition ratio.

There is provided a plasma processing apparatus for performing plasma processing or a substrate, comprising: a chamber; a substrate support disposed in the chamber and including a base, an electrostatic chuck on the base, and an edge ring disposed to surround a substrate mounted on the electrostatic chuck; a Radio Frequency (RF) power supply for supplying RF power for generating plasma from gases in the chamber; a DC power supply for applying a negative DC voltage to the edge ring; a waveform control element for controlling a waveform of the DC voltage; and a controller for controlling a time taken for the DC voltage to reach a desired value by adjusting a constant of the waveform control element.

The device for observing permeation and diffusion path of observation target gas includes: a scanning electron microscope 15; an observation target ion detecting unit 20; an observation target gas supply unit 19; a diaphragm-type sample holder 12, to which the sample is mounted in attachable/detachable state, as a diaphragm dividing between the analysis chamber 11 and the observation target gas pipe 14; and a control unit 50. The control unit acquires a SEM image and at the same time detects the observation target gas, which diffuses within the sample and is discharged to the surface of the sample, by electron stimulated desorption, in a state where stress is applied to the sample due to differential pressure generated between the analysis chamber and the observation target gas pipe by supplying the observation target gas, and obtains an ESD image of the observation target ions.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space; and a support unit configured to support and heat a substrate in the treating space, and wherein the support unit includes: at least one heating element for adjusting a temperature of the substrate; a power source for generating a power applied to at least one heating element; a power supply line for transmitting the power generated by the power source to the at least one heating element; a power return line for grounding the at least one heating element; and a current measuring resistor provided on the power supply line or the power return line and used for estimating a temperature of the at least one heating element.

An apparatus may include a first beam sensor, disposed adjacent a first position along a beamline. The apparatus may further include a second beam sensor, disposed adjacent a second position along the beamline, at a predetermined distance, downstream of the first beam sensor. The apparatus may include a detection system, coupled to the first beam sensor and to the second beam sensor to receive from a pulsed ion beam a first electrical signal from the first beam sensor and a second electrical signal from the second beam sensor.

The invention relates to a device and a method for producing layers whose layer thickness distribution can be adjusted in coating systems with horizontally rotating substrate. A very homogeneous or a specific non-homogeneous distribution can be adjusted. The particle loading is also significantly reduced. The service life is significantly higher compared to other methods. Forming of parasitic coatings is reduced.

Methods and apparatus for processing a substrate are provided herein. For example, a gas supply configured for use with a processing chamber includes an ampoule that stores a precursor and comprises an input to receive a carrier gas and an output to provide a mixture of the carrier gas and the precursor to the processing chamber and a sensor assembly comprising a detector and an infrared source operably connected to an outside of an enclosure, through which the mixture flows, and a gas measurement volume disposed within the enclosure and along an inner wall thereof so that a concentration of the precursor in the mixture can be measured by the detector and transmitted to a controller.

An apparatus comprising a beam emitter to emit a beam comprising electrons, ions or laser-light photons toward a target substrate. A motion sensor to detect mechanical vibrations of the target substrate. The motion sensor is mechanically coupled to the target substrate, a processor coupled to an output of the motion sensor. The processor is to generate a vibration correction signal proportional to the mechanical vibrations detected by the motion sensor, and beam steering optics coupled to the processor. The beam steering optics are to deflect the beam according to the vibration correction signal to compensate for the mechanical vibrations of the target substrate.

The present invention relates to methods of delayering a semiconductor integrated circuit die or wafer. In at least one aspect, the method includes exposing a die or wafer to plasma of an etching gas and detecting exposure of one or more metal layers within the die. In one aspect of the invention, the plasma of the etching gas is non-selective and removes all materials in a layer at about the same rate. In another aspect of the invention, two different plasmas of corresponding etching gases are employed with each plasma of the etching gas being selective, thus necessitating the sequential use of both plasmas of corresponding etching gases to remove all materials in a layer.