Provided is a semiconductor fabrication facility including a chamber, a gas supply configured to provide reaction gas to the chamber, a plurality of vacuum pumps respectively configured to pump the reaction gas from the chamber, an exhaust apparatus that is connected to the plurality of vacuum pumps and configured to purify the reaction gas, an exhausting line between the exhaust apparatus and the plurality of vacuum pumps, a thickness detection apparatus connected to the exhausting line and configured to detect a thickness of a byproduct layer in the exhausting line, and a processor connected to the thickness detection apparatus and configured to display preventive maintenance of the exhausting line based on the thickness of the byproduct layer being greater than a threshold value.

Provided is a charged particle beam apparatus capable of analyzing foreign matters generated when a sample is transported or observed. The charged particle beam apparatus includes a sample stage on which a measurement sample is provided, a charged particle beam source that irradiates the measurement sample with a charged particle beam, and a detector that detects charged particles emitted by irradiation with the charged particle beam, and includes a foreign matter observation sample held on the sample stage together with the measurement sample and a foreign matter observation unit that causes a foreign matter to be observed on the foreign matter observation sample.

Disclosed herein is a device for measuring a plasma ion density, which includes a transceiver antenna configured to apply and receive a microwave, of which a frequency is varied, to and from plasma, and a frequency analyzer configured to analyze a frequency of the microwave received from the transceiver antenna and measure a cut-off frequency, wherein the frequency of the microwave applied to the plasma is varied in the range of 100 kHz to 500 MHz.

Disclosed is a multi-port phase compensation nested apparatus for microwave-plasma deposition of diamond films. A resonant cavity part includes an inner cavity body, a ring waveguide, a slot opening, a quartz ring, a metal platform, a deposition platform, a substrate, and a recess, wherein the slot opening is located on a wall of the inner cavity body, communicating the inner cavity body with the ring waveguide.

A substrate processing method capable of performing a stable plasma process includes: supplying a source gas under a first plasma atmosphere using a substrate processing apparatus including a power generation unit, a first reactor, and a matching network between the power generation unit and the first reactor; purging the source gas; supplying a reaction gas under a second plasma atmosphere; and purging the reaction gas, wherein setting a variable capacitor included in the matching network to a first value is performed during the purging of the source gas, and setting the variable capacitor to a second value is performed during the purging of the reaction gas.

A drive circuit for providing RF power to a component of a substrate processing system includes a plasma source operating at a first frequency. A load includes the component of the substrate processing system. An impedance network connects the plasma source to the load. A current sensor senses current at an output of the plasma source. A voltage sensor senses voltage at the output of the plasma source. A controller includes a tuned frequency calculator configured to calculate a tuned frequency for the plasma source based on the voltage, the current, and a configuration of the impedance network and to adjust the first frequency based on the tuned frequency.

A method for etching a curved substrate is provided, including: forming a conductive thin film layer with an etched pattern on the curved substrate; supplying power to the conductive thin film layer such that the conductive thin film layer has an equal potential at each position of the conductive thin film layer; etching each position of the curved substrate to an etching depth corresponding to the potential at each position of the conductive thin film layer based on the etched pattern of the conductive thin film layer, so as to obtain the curved substrate having a consistent etching depth at each position of the curved substrate. With the etching method, it is possible to etch an arbitrary curved surface to obtain a microstructure with a uniform processing depth.

Disclosed is a plasma generating device which includes a reactor body having a gas injection hole on one side thereof, and a collector connected to an opposite side of the reactor body and having a collection space in an interior thereof. The reactor body and the collector provide a reaction space having a plasma channel in an interior thereof.

A gas delivery system for substrate processing tool includes a first gas box configured to supply a first gas mixture including one or more gases selected from a first set of N gases to a first substrate processing chamber, where N is an integer greater than one. A second gas box is configured to selectively supply a second gas mixture including one or more gases selected from a second set of M gases to a second substrate processing chamber, where M is an integer greater than one. A third gas box is configured to supply a third gas to the first substrate processing chamber at a first concentration and to supply the third gas to the second substrate processing chamber at a second concentration. The third gas is incompatible with one or more gases in the first set of N gases and with one or more gas in the second set of M gases.

An apparatus for treating a substrate includes a process chamber having a process space, a support unit that supports the substrate in the process space, a lift pin module having a lift pin that moves a consumable component on the support unit in an up/down direction, and a measurement unit that measures a degree of wear of the consumable component and has a light receiving member that receives light emitted in a horizontal direction.