A defect inspection device includes a sample support member, a negative voltage, an imaging element, an ultraviolet light source, a movement stage, and a control device. The control device controls the movement stage such that a portion of a linear part included in the image or a location on an extensional line of the linear part is positioned at a specific location in an irradiated region of the electron beam. The control device also repeats the control of the movement stage until an end of the linear part is positioned within the irradiated region of the electron beam.

A wafer inspection system is disclosed. According to certain embodiments, the system includes an electron detector that includes circuitry to detect secondary electrons or backscattered electrons (SE/B SE) emitted from a wafer. The electron beam system also includes a current detector that includes circuitry to detect an electron-beam-induced current (EBIC) from the wafer. The electron beam system further includes a controller having one or more processors and a memory, the controller including circuitry to: acquire data regarding the SE/BSE; acquire data regarding the EBIC; and determine structural information of the wafer based on an evaluation of the SE/BSE data and the EBIC data.

A control unit for controlling a deflector in an imaging apparatus. The imaging apparatus includes an electron gun arranged to provide electron beam to scan a specimen, and the deflector. The deflector is arranged to move the electron beam in a first scanning direction and a second scanning direction that are in the same plane for scanning the specimen. The control unit is configured to determine the first scanning direction and the second scanning direction, and process the determined first scanning direction and the determined second scanning direction based on predetermined equations. The control unit is further configured to provide, based on the processing, a control signal to the deflector to adjust one or both of the first scanning direction and the second scanning direction such that they become substantially orthogonal.

A computing unit generates a to-be-used-in-computation netlist on the basis of a to-be-used-in-calculation device model corresponding to a correction sample, estimates a first application result, on the basis of the to-be-used-in-computation netlist and an optical condition, when a charged particle beam is applied to the correction sample under the optical condition, compares the first application result and a second application result based on a detection signal when the charged particle beam is applied to the correction sample under the optical condition, and corrects the optical condition when the first application result and the second application result differ from each other.

A control unit for controlling a deflector in an imaging apparatus. The imaging apparatus includes an electron gun arranged to provide electron beam to scan a specimen, and the deflector. The deflector is arranged to move the electron beam in a first scanning direction and a second scanning direction that are in the same plane for scanning the specimen. The control unit is configured to determine the first scanning direction and the second scanning direction, and process the determined first scanning direction and the determined second scanning direction based on predetermined equations. The control unit is further configured to provide, based on the processing, a control signal to the deflector to adjust one or both of the first scanning direction and the second scanning direction such that they become substantially orthogonal.

A method of operating a particle beam device for imaging, analyzing and/or processing an object may be carried out, for example, by a particle beam device. The method may include: identifying at least one region of interest on the object; defining: (i) an analyzing sequence for analyzing the object, (ii) a processing sequence for processing the object by deformation and (iii) an adapting sequence for adapting the at least one region of interest depending on the processing sequence and/or on the analyzing sequence; processing the object by deformation according to the processing sequence and/or analyzing the object according to the analyzing sequence; adapting the at least one region of interest according to the adapting sequence; and after or while adapting the at least one region of interest, imaging and/or analyzing the at least one region of interest using a primary particle beam being generated by a particle beam generator.

An electron beam apparatus is provided. The apparatus comprises an e-beam source configured to generate an electron beam, a first part configured to support a substrate, the first part comprising an object table for supporting the substrate, the first part further comprising a short stroke actuator system for actuating the object table relative to the e-beam source, the short stroke actuator system comprising a short stroke forcer. The apparatus further comprises a second part configured to movably support the first part and a long stroke actuator system configured to actuate movement of the first part with respect to the second part, the long stroke actuator system comprising a long stroke forcer, wherein the short stroke forcer and/or the long stroke forcer is configured to be switched off while the electron beam is projected onto the substrate.

The present disclosure relates to a detection system, and, more particularly, to system for detection of passive voltage contrast and methods of use. The system includes a chamber; a stage provided within the chamber, configured to stage a target structure; an electron beam apparatus which is structured to emit an e-beam toward the stage; and a laser source which emits a laser signal toward the stage, at a same area as the e-beam.

There is provided a tilting parameters calculating device for use in a charged particle beam device for making a charged particle beam irradiated to a surface of a sample mounted on a sample stage, the tilting parameters calculating device being configured to calculate tilting parameters, the tilting parameters being input parameters to control a tilting direction and a tilting value of the sample and/or the charged particle beam, the input parameters being necessary to change an incident direction of the charged particle beam with respect to the sample, the tilting parameters calculating device including a tilting parameters calculating unit for calculating the tilting parameters based on information that indicates the incident direction of the charged particle beam with respect to a crystal lying at a selected position on the surface in a state where the incident direction of the charged particle beam with respect to the sample is in a predetermined incident direction, the information being designated on a crystal orientation figure, which is a diagram illustrating the incident direction of the charged particle beam with respect to a crystal coordinate system of the crystal.

Provided is an observation method including: acquiring an observed image that has been photographed by the first specimen observation apparatus with the specimen holder being mounted on the first specimen stage, the observed image having an observation target position of a specimen positioned at a center thereof, and including the plurality of markers (Step S104); acquiring pixel coordinates of each of the plurality of markers in the observed image (Step S106); acquiring stage coordinates of each of the plurality of markers on the second specimen stage having the specimen holder mounted thereon (Step S108); and converting, based on the pixel coordinates of the plurality of markers and the stage coordinates of the plurality of markers, pixel coordinates of the center of the observed image into stage coordinates to move the second specimen stage to the obtained stage coordinates (Step S112).