A multiple beam image acquisition apparatus includes a stage to mount thereon a target object, a beam forming mechanism to form multiple primary electron beams and a measurement primary electron beam, a primary electron optical system to collectively irradiate the target object surface with the multiple primary electron beams and the measurement primary electron beam, a secondary electron optical system to collectively guide multiple secondary electron beams generated because the target object is irradiated with the multiple primary electron beams, and a measurement secondary electron beam generated because the target object is irradiated with the measurement primary electron beam, a multi-detector to detect the multiple secondary electron beams collectively guided, a measurement mechanism to measure a position of the measurement secondary electron beam collectively guided, and a correction mechanism to correct a trajectory of the multiple secondary electron beams by using a measured position of the measurement secondary electron beam.

The scanning charged particle beam microscope according to the present application is characterized in that, in acquiring an image of the FOV (field of view), interspaced beam irradiation points are set, and then, a deflector is controlled so that a charged particle beam scan is performed faster when the charged particle beam irradiates a position on the sample between each of the irradiation points than when the charged particle beam irradiates a position on the sample corresponding to each of the irradiation points (a position on the sample corresponding to each pixel detecting a signal). This allows the effects from a micro-domain electrification occurring within the FOV to be mitigated or controlled.

The present invention shortens the time spent in a search for a visual field by a user in a charged particle beam apparatus in which an observation range on a sample is set by using a captured image of the sample. When the contour of a sample table is circularly configured, for example, the central position of a sample table image on an optical image is quickly, easily, and accurately obtained by calculating, from the coordinates of the respective vertices of a triangle circumscribed about the contour created on the optical image by the user, the incenter of the triangle without direct recognition by automatic image analysis, which is complex and time-consuming, of the contour of the sample table image on the optical image.

A method for analyzing disturbing influences in a multi-beam particle microscope which operates using a plurality of individual charged particle beams arranged in a raster arrangement includes the following steps: providing an object; stationary scanning the object at a first position via the plurality of the individual particle beams during a predetermined irradiation time T, as a result of which latent structures are formed on the object; raster scanning the object comprising the first position with the formed latent structures via the plurality of the individual particle beams; and analyzing the latent structures.

Disclosed herein are systems and methods for calibration of a charged particle beam microscope, including a source configured to generate a CPB comprising a plurality of charged particles having a known energy; at least one lens; a detector; and a controller. According to various disclosed embodiments, the controller may determine, based on a calibration characteristic, that the CPB microscope requires recalibration. Based on that determination, the controller may operate the source to generate a calibration CPB and configure the at least one lens to act as a charged particle mirror. The controller may receive data from the detector associated with the plurality of charged particles after reflecting off the charged particle mirror. The controller may then analyze the data from the detector and automatically recalibrate the CPB microscope based on calibration characteristics in the data from the detector.

A reference sample (41) has a step/terrace structure made of monocrystalline SiC and a surface of each terrace has first or second stack orientation. In the reference sample (41), contrast as difference in lightness and darkness between an image of a terrace with a surface directly under which the first stack orientation lies and an image of a terrace with a surface directly under which the second stack orientation lies changes according to an incident electron angle which is an angle that an electron beam emitted from a scanning electron microscope forms with a perpendicular to the terrace surface. Even when a SiC substrate has an off angle (e.g., from 1? to 8?), using an inclined support base (20a) capable of correcting the off angle enables sharp contrast that reflects difference between the first and second stack orientations directly under the surface to be obtained irrespective of the off angle.

A pattern inspection method includes: scanning an inspection substrate, to be inspected, to detect a secondary electron group emitted from the inspection substrate due to irradiation with the multiple beams; correcting individually distortion of a first region image obtained from a detection signal of secondary electrons corresponding to a corresponding first region for each beam of the multiple beams; correcting distortion of a corresponding second region image corresponding to a second region larger than the first region for each of the second region images, using data of each of the first region images in which the distortion of the corresponding first region image has been corrected; and comparing an inspection image to be inspected, in which the distortion of each of the plurality of second region images has been corrected, with a reference image of a same region to output a result thereof.

A multi-beam inspection system includes one or more particle beam sources to generate two or more particle beams, a set of particle control elements configured to independently direct the two or more particle beams to a sample, one or more detectors positioned to receive particles emanating from the sample in response to the two or more particle beams, and a controller communicatively coupled to the one or more detectors. The controller includes one or more processors to generate two or more inspection datasets associated with the particles received by the one or more detectors.

The disclosure relates to systems and method for processing images. The method includes selecting a predetermined reference structure, the predetermined reference structure having a known feature size/shape. The method also includes obtaining a reference image of the predetermined reference structure, and capturing a calibration image of the predetermined reference structure using an observation device. The calibration image includes a plurality of features. Additionally, the method includes identifying at least one portion of the plurality of features of the calibration image that include a feature size/shape substantially similar to the known feature size and shape of the predetermined reference structure. Finally, the method includes combining the identified portion of the plurality of features of the calibration image to form a stacked feature image, and determining a point spread function (PSF) of the observation device by comparing the obtained reference image with the stacked feature image.

An electron microscope includes: an irradiation lens system that irradiates a specimen with an electron beam; an irradiation system deflector that deflects an electron beam incident on the specimen; a specimen tilting mechanism that tilts the specimen; an imaging lens system that forms an electron diffraction pattern or an electron microscope image by using an electron having passed through the specimen; an imaging device that acquires the electron diffraction pattern or the electron microscope image formed by the imaging lens system; and a controller that controls the irradiation system deflector and the specimen tilting mechanism. The controller performs: a process of acquiring a plurality of electron diffraction patters formed by using electron beams having different incidence angles to the specimen, the different incidence angles having been obtained by deflecting the electron beams incident on the specimen by using the irradiation system deflector; a process of calculating a tilt angle of the specimen based on the plurality of electron diffraction patterns; and a process of controlling the specimen tilting mechanism so that the specimen has the calculated tilt angle.