Provided is a measurement device including: an irradiation optical system which emits a primary charged quantum beam to a sample for scanning; a detector which detects secondary charged particles generated from the sample; and a signal processing unit which processes an output signal from the secondary charged particle detector which has detected the secondary charged particles, in which the signal processing unit includes a measurement unit which measures widths of a first pattern group calibrated with a well-known first dimension and a second pattern group calibrated with a well-known second dimension, and an operation unit which defines a relationship between the well-known dimensions of the first and second pattern groups and length measurement values of the first and second pattern groups as a function. Accordingly, it is possible to control device performance with high accuracy, by controlling a device state so that the measured value described above is within an acceptable range by comparing to a predetermined value provided in advance.

Embodiments are further directed to an information processing system for generating a corrected image of a sample. The system includes a detector, a memory communicatively coupled to the detector, and a post-detection image processor communicatively coupled to the memory and the detector. The system is configured to perform a method that includes detecting, by the detector, data of a plurality of moving particles, wherein the data of the plurality of moving particles correspond to an uncorrected image of the sample, and wherein the uncorrected image includes defocus, astigmatism and spherical aberration. The method further includes generating, by the post-detection image processor, a corrected image of the sample based at least in part on processing the detected data of the plurality of moving particles.

The present application discloses methods, systems and devices for using charged particle beam tools to pattern and inspect a substrate. The inventors have discovered that it is highly advantageous to use patterns generated using the Hadamard transform as alignment and registration marks (Hadamard targets) for multiple-column charged particle beam lithography and inspection tools. Further, superior substrate alignment and layer-to-layer pattern registration accuracy can be achieved using Hadamard targets patterned in edge-proximal portions of the substrate that are typically stripped bare of resist prior to lithography, in addition to Hadamard targets patterned in inner substrate portions. High-order Hadamard targets can also be patterned and imaged to obtain superior column performance metrics for applications such as super-rapid beam calibration DOE, column matching, and column performance tracking. Superior alignment and registration, and column parameter optimization, allow significant yield gains.

An improved process workflow and apparatus for S/TEM sample preparation and analysis is provided. Preferred embodiments provide improved methods for an automated recipe TEM sample creation, especially for small geometry TEM lamellae, employing CAD data to automatically align various stages of sample preparation. The process automatically verifies and aligns the position of FIB-created fiducials by masking off portions of acquired images, and then comparing them to synthesized images from CAD data. SEM beam positions are verified by comparison to images synthesized from CAD data. FIB beam position is also verified by comparison to already-aligned SEM images, or by synthesizing an FIB image from CAD using techniques for simulating FIB images. The automatic alignment techniques herein allow creation of sample lamellas at specified locations without operator intervention.

A method for operating a multi-beam particle microscope in an inspection mode of operation and an associated multi-beam particle microscope are disclosed, wherein a detection unit comprises an image generation detection region with fixedly assigned detection channels and an adjustment detection region with additional detection channels. The fixedly assigned detection channels and the additional detection channels are in the same detection plane. Based on signals obtained via the additional detection channels, it is possible to correct an incidence position of the secondary beams on the detection unit in real time, to be precise independently of the specific structure of the detection unit.

A multi-beam charged particle beam system and a method of operating a multi-beam charged particle beam system with higher precision are configured for a determination of an assignment of secondary electron focus spot to a plurality of sets of detection elements. The system and method are further configured to adjust the assignment and for a calibration of a monitoring method and system for monitoring the assignment. The system and method are applicable for an inspection of samples, for example for wafer or mask inspection.

Prior to execution of primary correction, a first centering process, an in-advance correction of a particular aberration, and a second centering process are executed stepwise. In the first centering process and the second centering process, a ronchigram center is identified based on a ronchigram variation image, and is matched with an imaging center. In the in-advance correction and the post correction of the particular aberration, a particular aberration value is estimated based on a ronchigram, and the particular aberration is corrected based on the particular aberration value.

An improved process workflow and apparatus for S/TEM sample preparation and analysis is provided. Preferred embodiments provide improved methods for an automated recipe TEM sample creation, especially for small geometry TEM lamellae, employing CAD data to automatically align various stages of sample preparation. The process automatically verifies and aligns the position of FIB-created fiducials by masking off portions of acquired images, and then comparing them to synthesized images from CAD data. SEM beam positions are verified by comparison to images synthesized from CAD data. FIB beam position is also verified by comparison to already-aligned SEM images, or by synthesizing an FIB image from CAD using techniques for simulating FIB images. The automatic alignment techniques herein allow creation of sample lamellas at specified locations without operator intervention.

Provided are methods to improve tomography by creating fiducial holes using charged particle beams, and using the fiducial holes to improve the sample positioning, acquisition, alignment, reconstruction, and visualization of tomography data sets. Some versions create fiducial holes with an ion beam during the process of milling the sample. Other versions create in situ fiducial holes within the TEM using the electron beam prior to acquiring a tomography data series. In some versions multiple sets of fiducial holes are made, positioned strategically around a region of interest. The fiducial holes may be employed to properly position the features of interest during the acquisition, and later to help better align the tilt-series, and improve the accuracy and resolution of the final reconstruction. The operator or software may identify the holes to be tracked with tomography feature tracking techniques.

The present disclosure relates to the determination of a pattern height of a pattern, which has been produced with extreme ultraviolet (EUV) lithography in a resist film. The determination is performed by using an electron beam (e-beam) system, in particular, by using a scanning electron microscope (SEM). In this respect, the disclosure provides a device for determining the pattern height, wherein the device comprising a processor. The processor is configured to obtain a SEM image of the pattern from an SEM. Further, the processor is configured to determine a contrast value related to the pattern based on the obtained SEM image. Subsequently, the processor is configured to determine the pattern height based on calibration data and the determined contrast value.