Even when the amount of overlay deviation between patterns located in different layers is large, correct measurement of the amount of overlay deviation is stably performed. The charged particle beam device includes a charged particle beam irradiation unit that irradiates a sample with a charged particle beam, a first detection unit that detects secondary electrons from the sample, a second detection unit that detects backscattered electrons from the sample, and an image processing unit that generates a first image including an image of a first pattern located on the surface of the sample based on an output of the first detection unit, and generates a second image including an image of a second pattern located in a lower layer than the surface of the sample based on an output of the second detection unit. A control unit adjusts the position of a measurement area in the first image based on a first template image for the first image, and adjusts the position of a measurement area in the second image based on a second template image for the second image.

A method and apparatus are provided for aligning a sample in a charged particle beam system. The charged particle beam is directed toward the sample to obtain a sample diffraction pattern. The sample diffraction pattern is compared with reference diffraction patterns having known misalignments to determine which reference pattern most closely matches the sample pattern. The known alignment of the best-matching reference diffraction pattern is used to correct the tilt of the sample. The “patterns” compared can be lists of bright spots with corresponding intensities rather than images.

Provided herein in an apparatus, including a substrate; a functional layer, wherein the functional layer has a composition characteristic of a workpiece of an analytical apparatus; and pre-determined features configured to calibrate the analytical apparatus. Also provided herein is an apparatus, including a functional layer overlying a substrate; and pre-determined features for calibration of an analytical apparatus configured to measure the surface of a workpiece, wherein the functional layer has a composition similar to the workpiece. Also provided herein is a method, including providing a lithographic calibration standard having a functional layer to an analytical apparatus, wherein the functional layer has a composition characteristic of a workpiece of the analytical apparatus; providing calibration standard specifications to a computer interfaced with the analytical apparatus; and calibrating the analytical apparatus in accordance with calibration standard readings and the calibration standard specifications.

The disclosure relates to a method of aligning a charged particle beam apparatus, comprising the steps of providing a charged particle beam apparatus in a first alignment state; using an alignment algorithm, by a processing unit, for effecting an alignment transition from said first alignment state towards a second alignment state of said charged particle beam apparatus; and providing data related to said alignment transition to a modification algorithm for modifying said alignment algorithm in order to effect a modified alignment transition.

To provide a technique capable of measuring high-frequency electrical noise in a charged particle beam device. A charged particle beam device 100 includes an electron source 2 for generating an electron beam EB1, a stage 4 for mounting a sample 10, a detector 5 for detecting secondary electrons EB2 emitted from the sample 10, and a control unit 7 electrically connected to the electron source 2, the stage 4, and the detector 5 and can control the electron source 2, the stage 4, and the detector 5. Here, when the sample 10 is mounted on the stage 4, and a specific portion 11 of the sample 10 is continuously irradiated with the electron beam EB1 from the electron source 2, the control unit 7 can calculate a time-series change in irradiation position of the electron beam EB1 based on an amount of the secondary electrons EB2 emitted from the specific portion 11, and can calculate a feature quantity for a shake of the electron beam EB1 based on the time-series change in irradiation position. Further, the feature quantity includes a frequency spectrum.

A method of determining a distortion of a field of view of a scanning electron microscope is described. The method may include: providing a sample including substantially parallel lines extending in a first direction; performing scans across the field of view of the sample along respective scan-trajectories extending in a scan direction; the scan direction being substantially perpendicular to the first direction; detecting a response signal of the sample caused by the scanning of the sample; determining a distance between a first line segment of a line and a second line segment of the line, whereby each of the first line segment and the second line segment are crossed by scan trajectories, based on the response signal; performing the previous step for multiple locations within the field of view; and determining the distortion across the field of view, based on the determined distances at the multiple locations.

The invention relates to a method for inspecting a sample with an assembly comprising a scanning electron microscope (SEM) and a light microscope (LM). The assembly comprises a sample holder for holding the sample. The sample holder is arranged for inspecting the sample with both the SEM and the LM, preferably at the same time. The method comprising the steps of: capturing a LM image of the sample in its position for imaging with the SEM; determining a position and dimensions of a region of interest in or on the sample using the LM image; determining values to which the SEM parameters need to be set to image the sample at a desired resolution; and capturing a SEM image of the region of interest, preferably using the first electron beam exposure of said region of interest.

The scanning charged particle beam microscope according to the present application is characterized in that, in acquiring an image of the FOV (field of view), interspaced beam irradiation points are set, and then, a deflector is controlled so that a charged particle beam scan is performed faster when the charged particle beam irradiates a position on the sample between each of the irradiation points than when the charged particle beam irradiates a position on the sample corresponding to each of the irradiation points (a position on the sample corresponding to each pixel detecting a signal). This allows the effects from a micro-domain electrification occurring within the FOV to be mitigated or controlled.

A method of producing a corrected beam of charged particles for use in a charged-particle microscope, comprising the following steps: Providing a non-monoenergetic input beam of charged particles; Passing said input beam through an optical module comprising a series arrangement of: A stigmator, thereby producing an astigmatism-compensated, energy-dispersed intermediate beam with a particular monoenergetic line focus direction; A beam selector, comprising a slit that is rotationally oriented so as to match a direction of the slit to said line focus direction, thereby producing an output beam comprising an energy-discriminated portion of said intermediate beam.

A method of determining a distortion of a field of view of a scanning electron microscope is described. The method may include: providing a sample including substantially parallel lines extending in a first direction; performing scans across the field of view of the sample along respective scan-trajectories extending in a scan direction; the scan direction being substantially perpendicular to the first direction; detecting a response signal of the sample caused by the scanning of the sample; determining a distance between a first line segment of a line and a second line segment of the line, whereby each of the first line segment and the second line segment are crossed by scan trajectories, based on the response signal; performing the previous step for multiple locations within the field of view; and determining the distortion across the field of view, based on the determined distances at the multiple locations.