Provided is an electron beam observation device that includes: an electron source; an objective lens concentrating an electron beam emitted from the electron source; and a control unit configured to perform control such that a plurality of images is generated by capturing images of a reference sample having a specific pattern, and a frequency characteristic is calculated for each of the plurality of images, in which an image is generated based on a secondary signal generated from a sample due to irradiation of the sample with the electron beam, and the control unit holds the plurality of frequency characteristics.

To implement a calibration sample by which an incident angle can be measured with high accuracy, an electron beam adjustment method, and an electron beam apparatus using the calibration sample. To adjust an electron beam using a calibration sample, the calibration sample includes a silicon single crystal substrate 201 whose upper surface is a {110} plane, a first recess structure 202 opening in the upper surface and extending in a first direction, and a second recess structure 203 opening in the upper surface and extending in a second direction intersecting the first direction, in which the first recess structure and the second recess structure each include a first side surface and a first bottom surface that intersects the first side surface, and a second side surface and a second bottom surface that intersects the second side surface, the first side surface and the second side surface are {111} planes, and the first bottom surface and the second bottom surface are crystal planes different from the {110} planes.

Systems and methods for automated alignment of cathodoluminescence (CL) optics in an electron microscope relative to a sample under inspection are described. Accurate placement of the sample and the electron beam landing position on the sample with respect to the focal point of a collection mirror that reflects CL light emitted by the sample is critical to optimizing the amount of light collected and to preserving information about the angle at which light is emitted from the sample. Systems and methods are described for alignment of the CL mirror in the XY plane, which is orthogonal to the axis of the electron beam, and for alignment of the sample with respect to the focal point of the CL mirror along the Z axis, which is coincident with the electron beam.

Provided is a charged particle beam device and a charged particle beam device calibration method capable of correcting an influence of characteristic variation and noise with high accuracy. Control units execute a first calibration of correcting a characteristic variation between a plurality of channels in detectors and signal processing circuits by using a setting value of a control parameter for each of the plurality of channels in a state in which a primary electron beam is not emitted. The control units further execute a second calibration of correcting a characteristic variation between the plurality of channels in scintillators or the like by using the setting value of the control parameter for each of the plurality of channels in a state in which the primary electron beam is emitted.

According to one aspect of the present invention, a multiple electron beam inspection apparatus includes a reference image generation circuit generating reference images corresponding to the secondary electron images, in accordance with an image generation characteristic of a secondary electron image by irradiation of one beam; and a correction circuit generating corrected reference images in which, on the basis of deviation information between a figure pattern of the secondary electron image by irradiation of the one beam of the multiple primary electron beams and a figure pattern of a secondary electron image by irradiation of another beam different from the one beam of the multiple primary electron beams, a shape of a figure pattern of a reference image corresponding to the figure pattern of the secondary electron image by the irradiation of the another beam in the reference images is corrected.

A charged-particle beam (CPB) is aligned to a primary axis of a CPB microscope by determining a first beam deflection drive to a beam deflector for directing the CPB passing a reference location displaced from the primary axis. The beam deflector is provided with a second beam deflection drive during the working mode of the CPB microscope to propagate the beam along the primary axis. The second beam deflection drive is determined based on the first beam deflection drive.

Variations in charged-particle-beam (CPB) source location are determined by scanning an alignment aperture that is fixed with respect to a beam defining aperture in a CPB, particularly at edges of a defocused CPB illumination disk. The alignment aperture is operable to transmit a CPB portion to a secondary emission surface that produces secondary emission directed to a scintillator element. Scintillation light produced in response is directed out of a vacuum enclosure associated with the CPB via a light guide to an external photodetection system.

A pattern according to an embodiment includes first and second line patterns, each of the first and second line patterns extends in a direction intersecting a <111> direction and has a side surface, the side surface has at least one {111} crystal plane, the side surface of the first line pattern has a first roughness, and the side surface of the second line pattern has a second roughness larger than the first roughness.

A computing unit generates a to-be-used-in-computation netlist on the basis of a to-be-used-in-calculation device model corresponding to a correction sample, estimates a first application result, on the basis of the to-be-used-in-computation netlist and an optical condition, when a charged particle beam is applied to the correction sample under the optical condition, compares the first application result and a second application result based on a detection signal when the charged particle beam is applied to the correction sample under the optical condition, and corrects the optical condition when the first application result and the second application result differ from each other.

A scanning electron microscope apparatus including an electron gun configured to generate an electron beam, a focusing lens configured to concentrate the electron beam from the electron gun, an electron detector configured to detect signals emitted from a sample in response to the electron beam incident on the sample, a stage configured to receive the sample thereon, and a focus calibration structure on an upper part of the stage.