A method of tuning an ion implantation apparatus is disclosed. The method includes operations of applying any wafer acceptance test (WAT) recipe to a test sample, calculating a recipe for a direct current (DC) final energy magnet (FEM), calculating a real energy of the DC FEM, verifying the tool energy shift, and obtaining a peak spectrum of the DC FEM.

A High Energy Beam Processing (HEBP) system provides feedback signal monitoring and feedback control for the improvement of process repeatability and three-dimensional (3D) printed part quality. Electrons deflected from a substrate in the processing area impinge on a surface of a sensor. The electrons result from the deflection of an electron beam from the substrate. Either one or both of an initial profile of an electron beam and an initial location of the electron beam relative to the substrate are determined based on a feedback electron signal corresponding to the impingement of the electrons on the surface of the sensor. With an appropriate profile and location of the electron beam, the build structure is fabricated on the substrate.

In one embodiment, a method of obtaining a dose correction amount, the method includes writing evaluation patterns by irradiating a substrate with a charged particle beam by multiple writing with different numbers of paths using a charged particle beam writing apparatus, measuring a size of each of the evaluation patterns, calculating a size variation rate per path from a size measurement result of the evaluation pattern corresponding to each of the numbers of paths, and calculating a dose variation rate per path based on the size variation rate per path and a dose latitude indicating a ratio of a pattern size variation amount to a dose variation of the charged particle beam.

Calibration systems, additive manufacturing systems employing the same, and methods of calibrating include a plurality of electron beam guns. One calibration system includes an imaging device positioned to capture one or more images of an impingement of electron beams emitted from the plurality of electron beam guns on a surface within a build chamber of the electron beam additive manufacturing system and an analysis component communicatively coupled to the imaging device. The analysis component is programmed to receive image data corresponding to the one or more images, determine one or more calibration parameters from the image data, and transmit one or more instructions to the plurality of electron beam guns in accordance with the one or more calibration parameters.

A multi-beam charged particle system and a method of setting a working distance WD of the multi beam charged particle system are provided. With the method, the working distance is adjusted while the imaging performance of a wafer inspection task is maintained by computing parameter values of components from predetermined calibration parameter values. The method can allow a relatively fast wafer inspection task even with a wafer stage with a fixed z-position parallel to an optical axis of the multi-beam charged particle system.

The disclosure relates to a method of aligning a charged particle beam apparatus, comprising the steps of providing a charged particle beam apparatus in a first alignment state; using an alignment algorithm, by a processing unit, for effecting an alignment transition from said first alignment state towards a second alignment state of said charged particle beam apparatus; and providing data related to said alignment transition to a modification algorithm for modifying said alignment algorithm in order to effect a modified alignment transition.

The invention relates to a method for regulating the operation of an electromechanical apparatus (1), for example an EBM apparatus, in order to obtain certified processed products, wherein it is provided an initial calibration step that is intended to check the proper functioning of all the component parts of the apparatus (1) structured to ensure the complete functionality and a subsequent quality control step carried out on the obtained products by the carried out working process. The method entails the following steps: defining a plurality of measurement parameters relating to the component parts of the apparatus; measuring at least some of said parameters by means of sensors and/or measurement indicators related to said parameters during at least one processing phase performed by the apparatus; performing a quality control step on the obtained products after the working process obtaining data on any deviation from the expected quality; comparing the detected measurements of said parameters and data on any deviation from the expected quality with corresponding values of reference parameters available for that specific apparatus and for those products; detecting any deviations in one or more of said parameters or said data with respect to the values of the reference parameters; computing, on the basis of such differences, a total correction and regulation value; applying said total correction and regulation value preferably to only one of said parameters prior to the subsequent process, for example to the generation energy of the electrons beam (3). Basically, the method of the present invention allows obtaining semi-finished products free from structural defects by means of a primary check of the correct functioning of the various component parts of the apparatus (calibration procedure), a secondary check of the operational effectiveness of the process itself (operational qualification procedure) and a further final check of the process stability and repeatability within a process window (performance qualification).

A method for process analysis includes acquiring first inspection data, using a first inspection modality, with respect to a substrate having multiple instances of a predefined pattern of features formed thereon using different, respective sets of process parameters. Characteristics of defects identified in the first inspection data are processed so as to select a first set of defect locations in which the first inspection data are indicative of an influence of the process parameters on the defects. Second inspection data are acquired, using a second inspection modality having a finer resolution than the first inspection modality, of the substrate at the locations in the first set. The defects appearing in the second inspection data are analyzed so as to select, from within the first set of the locations, a second set of the locations in which the second inspection data are indicative of an optimal range of the process parameters.

An evaluation method according to an embodiment is to evaluate a precision of an aperture formed with multiple openings, and includes steps of forming a first evaluation pattern based on evaluation data using multiple electron beams generated by electron beam that has passed through the aperture, dividing the aperture into multiple regions, each of the regions including the multiple openings and defining the multiple divided regions, forming a second evaluation pattern based on evaluation data using the electron beam that has passed through a first divided region among the multiple divided regions, comparing the first evaluation pattern with the second evaluation pattern, and evaluating the precision of the aperture based on the comparison result between the first evaluation pattern and the second evaluation pattern.

An overlay metrology system includes a particle-beam metrology tool to scan a particle beam across an overlay target on a sample including a first-layer target element and a second-layer target element. The overlay metrology system may further include a controller to receive a scan signal from the particle-beam metrology tool, determine symmetry measurements for the scan signal with respect to symmetry metrics, and generate an overlay measurement between the first layer and the second layer based on the symmetry measurements in which an asymmetry of the scan signal is indicative of a misalignment of the second-layer target element with respect to the first-layer target element and a value of the overlay measurement is based on the symmetry measurements.