A writing apparatus includes a writing unit to include a deflector for deflecting a charged particle beam and write a pattern on a target object by the charged particle beam, a decision unit to decide a representative position of a deflection result range in which the charged particle beam was deflected with respect to a writing direction by the deflector, and a correction unit to correct drift of the charged particle beam by using a drift amount at the representative position of the deflection result range.

An ion milling device includes: a first monitoring mechanism that measures an amount of sputtered particles generated by irradiating a sample with an ion beam; and a second monitoring mechanism that images a processed surface of the sample formed by irradiating the sample with the ion beam, in which processing on the sample ends when a sputtering amount of the sample estimated through measurement by the first monitoring mechanism and a shape of the processed surface image extracted from a picture captured by the second monitoring mechanism satisfy processing end conditions set for the sputtering amount and the shape of the processed surface.

In one embodiment, a charged particle beam writing apparatus includes an emitter emitting a charged particle beam, a movable stage on which a substrate as a writing target is placed, a shot data corrector correcting shot data generated from writing data using a previously determined relationship between a speed of the stage and a positional deviation amount caused by change in the speed of the stage, and a writer irradiating the substrate with the charged particle beam using the corrected shot data, and writing a pattern sequentially on each of a plurality of stripe regions obtained by dividing a writing region of the substrate with a predetermined width.

A system and method for the precise and uniform material removal or delayering of a large area of a sample is provided. The size of the milled area is controllable, ranging from sub-millimeter to multi-millimeter scale and the depth resolution is controllable on the nanometer scale. A controlled singularly charged ion beam is scanned across the sample surface in such a manner to normalize the ion density distribution from the sample center toward the periphery to realize uniform delayering.

A system and method for the precise and uniform material removal or delayering of a large area of a sample is provided. The size of the milled area is controllable, ranging from sub-millimeter to multi-millimeter scale and the depth resolution is controllable on the nanometer scale. A controlled singularly charged ion beam is scanned across the sample surface in such a manner to normalize the ion density distribution from the sample center toward the periphery to realize uniform delayering.

An ion implantation method includes generating a first scan beam, based on a first scan signal, measuring a beam current of the first scan beam by using a beam measurement device at a plurality of measurement positions, calculating a beam current matrix, based on a time waveform of the beam current measured by the beam measurement device and a time waveform of the scan command values determined in the first scan signal, calculating a first beam current density distribution of the first scan beam in a predetermined direction by performing time integration on the measured beam current, correcting a value of each component of the beam current matrix, based on the first beam current density distribution, and generating a second scan signal for realizing a target beam current density distribution in the predetermined direction, based on the corrected beam current matrix.

A method of operating a particle beam system comprises providing a model which outputs an output image based on a simulation of the particle beam system, generating vibration data from vibrations measured at the installation site, setting values of parameters of an intended operation of the system, providing an input image to the model, inputting the vibration data and the set values of the parameters into the model, and act based on an analysis of the output image. Straight lines in the input image correspond to straight lines in the output image if the vibrations are of a low intensity. Straight lines in the input image correspond to non-straight lines in the output image if the vibrations are of a high intensity. The parameters represent at least one of a working distance, a kinetic energy of particles incident on the sample, and a scan speed.