A multi charged particle beams exposure method includes assigning, with respect to plural times of shots of multi-beams using a charged particle beam, each shot to one of plural groups, depending on a total current value of beams becoming in an ON condition in a shot concerned in the multi-beams, changing the order of the plural times of shots so that shots assigned to the same group may be continuously emitted for each of the plural groups, correcting, for each group, a focus position of the multi-beams to a focus correction position for a group concerned corresponding to the total current value, and performing the plural times of shots of the multi-beams such that the shots assigned to the same group are continuously emitted in a state where the focus position of the multi-beams has been corrected to the focus correction position for the group concerned.

In one embodiment, a charged particle beam writing method includes writing a first pattern statically in central part of a first substrate having Charge Dissipation Layer (CDL), calculating, based on a position of the written first pattern, a first correction coefficient, writing a second pattern statically applying with the first correction coefficient in central part of a second substrate having no CDL, calculating, based on a position of the written second pattern, a second correction coefficient, writing a third pattern continuously applying with the first correction coefficient in central part of a third substrate having CDL, calculating, based on a position of the written third pattern, a third correction coefficient, writing a fourth pattern statically applying with the first correction coefficient in wide range of a fourth substrate having CDL, and calculating, based on a position of the written fourth pattern, a fourth correction coefficient.

An ion implantation apparatus includes a beam scanner that provides a reciprocating beam scan in a beam scan direction in accordance with a scan waveform, a mechanical scanner that causes a wafer to reciprocate in a mechanical scan direction, and a control device that controls the beam scanner and the mechanical scanner to realize a target two-dimensional dose amount distribution on a surface of the wafer. The control device includes a scan frequency adjusting unit that determines a frequency of the scan waveform in accordance with the target two-dimensional dose amount distribution, and a beam scanner driving unit that drives the beam scanner by using the scan waveform having the frequency determined by the scan frequency adjusting unit.

In one embodiment, a multi charged particle beam writing apparatus includes a plurality of reflective marks disposed on a stage, an inspection aperture member configured to allow one beam to pass therethrough, a first detector detecting a beam current of a beam passed through the inspection aperture member, a second detector detecting charged particles reflected from the reflective marks, a first beam shape calculator generating a beam image based on the beam currents detected by the first detector and calculating a reference beam shape, and a second beam shape calculator calculating a beam shape based on changes in intensity of the reflected charged particles and a position of the stage. The reference beam shape is calculated before writing. During writing, the beam shape based on reflected charged particles is calculated, and variation of the beam shape is added to the reference beam shape.

A charged particle beam writing apparatus includes a writing data generation circuitry to input character information or information of an item selected, for specifying an apparatus quality check pattern used for evaluating apparatus quality of a charged particle beam writing apparatus, and to generate writing data of the apparatus quality check pattern based on the character information or the information of the item selected, and a combination circuitry to input writing data of an actual chip pattern to be written on a target object, and to combine the writing data of the actual chip pattern and the writing data of the apparatus quality check pattern such that the actual chip pattern and the apparatus quality check pattern do not overlap with each other.

The invention is directed to a technique for reducing the time from the start of fabrication of a prototype structure to the completion of fabrication of a real structure. A device processing method includes steps of: fabricating a first structure using an ion beam under a first condition in a first region on a substrate; measuring a size of the first structure which is fabricated; comparing the measurement result with design data; determining a second condition from the comparison result; and fabricating a second structure using the ion beam under the second condition in a second region on the substrate.

A parameter acquiring method for dose correction of a charged particle beam includes writing evaluation patterns on a substrate coated with resist; writing, while varying writing condition, a peripheral pattern on a periphery of any different one of the evaluation patterns, after an ignorable time as to influence of resist temperature increase due to writing of an evaluation pattern concerned has passed; and calculating a parameter for defining correlation among a width dimension change amount of the evaluation pattern concerned, a temperature increase amount of the evaluation pattern concerned, and a backscatter dose reaching the evaluation pattern concerned, by using, under each writing condition, a width dimension of the evaluation pattern concerned, the temperature increase amount of the evaluation pattern concerned at each shot time, and the backscatter dose reaching the evaluation pattern concerned from each shot.

Embodiments herein provide methods of monitoring temperatures of fluid delivery conduits for delivering fluids to, and other components external to, a processing volume of a processing chamber used in electronic device fabrication manufacturing, and monitoring systems related thereto. In one embodiment, a method of monitoring a processing system includes receiving, through a data acquisition device, temperature information from one or more temperature sensors and receiving context information from a system controller coupled to a processing system comprising the processing chamber. Here, the one or more temperature sensors are disposed in one or more locations external to a processing volume of a processing chamber. The context information relates to instructions executed by the system controller to control one or more operations of the processing system.

In one embodiment, a multi charged particle beam writing apparatus includes an emitter that emits a charged particle beam, an aperture plate in which a plurality of openings are formed and that forms multiple beams by allowing the charged particle beam to pass through the plurality of openings, a blanking plate provided with a plurality of blankers that each perform blanking deflection on a corresponding beam included in the multiple beams, a stage on which a substrate irradiated with the multiple beams, a detector that detects a reflection charged particle from the substrate, feature amount calculation circuitry that calculates a feature amount of an aperture image based on a detection value of the detector, and aberration correction circuitry that corrects aberration of the charged particle beam based on the feature amount.

A parameter acquiring method for dose correction of a charged particle beam includes writing evaluation patterns on a substrate coated with resist; writing, while varying writing condition, a peripheral pattern on a periphery of any different one of the evaluation patterns, after an ignorable time as to influence of resist temperature increase due to writing of an evaluation pattern concerned has passed; and calculating a parameter for defining correlation among a width dimension change amount of the evaluation pattern concerned, a temperature increase amount of the evaluation pattern concerned, and a backscatter dose reaching the evaluation pattern concerned, by using, under each writing condition, a width dimension of the evaluation pattern concerned, the temperature increase amount of the evaluation pattern concerned at each shot time, and the backscatter dose reaching the evaluation pattern concerned from each shot.