A test control port (TCP) includes a state machine SM, an instruction register IR, data registers DRs, a gating circuit and a TDO MX. The SM inputs TCI signals and outputs control signals to the IR and to the DR. During instruction or data scans, the IR or DRs are enabled to input data from TDI and output data to the TDO MX and the top surface TDO signal. The bottom surface TCI inputs may be coupled to the top surface TCO signals via the gating circuit. The top surface TDI signal may be coupled to the bottom surface TDO signal via TDO MX. This allows concatenating or daisy-chaining the IR and DR of a TCP of a lower die with an IR and DR of a TCP of a die stacked on top of the lower die.

The present application discloses methods, systems and devices for using charged particle beam tools to pattern and inspect a substrate. The inventors have discovered that it is highly advantageous to use patterns generated using the Hadamard transform as alignment and registration marks (Hadamard targets) for multiple-column charged particle beam substrate processing and inspection tools. Hadamard targets can be written to a substrate using charged particle beams performing, for example, resist-based lithography or resist-less direct processing. High-order Hadamard targets can also be patterned and imaged to obtain superior column performance metrics for applications such as super-rapid beam calibration DOE, column matching, and column performance tracking. Hadamard target blocks can be written highly locally to electrically functional pattern portions, or integrated into said pattern portions, thereby enabling re-registration local and contemporaneous to writing and improving beam targeting accuracy following re-registration. Superior alignment and registration, and column parameter optimization, allow significant yield gains.

An apparatus and method for processing a workpiece with a beam is described. The apparatus includes a vacuum chamber having a beam-line for forming a particle beam and treating a workpiece with the particle beam, and a scanner for translating the workpiece through the particle beam. The apparatus further includes a scanner control circuit coupled to the scanner, and configured to control a scan property of the scanner, and a beam control circuit coupled to at least one beam-line component, and configured to control the beam flux of the particle beam according to a duty cycle for switching between at least two different states during processing.

Methods and systems for direct atomic layer etching and deposition on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform atomic layer etch and atomic layer deposition, expressing pattern with selected 3D-structure. Reducing the number of process steps in patterned atomic layer etch and deposition reduces manufacturing cycle time and increases yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding columns, and support superior, highly-configurable process execution and control.

This invention can maintain the temperature of the shaping plane in a three-dimensional layer-by-layer shaping apparatus. A three-dimensional layer-by-layer shaping apparatus includes a material spreader that spreads the material or materials of a three-dimensional layer-by-layer shaped object onto the shaping plane on which the three-dimensional layer-by-layer shaped object is to be shaped; an electron gun that generates an electron beam; at least one deflector that deflects the electron beam so that it scans the shaping plane one- or two-dimensionally; at least one lens that is positioned between the electron gun and the deflector, and focuses the electron beam; a focus controller that controls the focus of the electron beam based on which region is to be scanned by the electron beam; and a controller that controls the deflecting direction of the deflector and the scanning rate.

An ion implantation method includes measuring a beam energy of an ion beam that is generated by a high-energy multistage linear acceleration unit operating in accordance with a tentative high-frequency parameter, adjusting a value of the high-frequency parameter based on the measured beam energy, and performing ion implantation by using the ion beam generated by the high-energy multistage linear acceleration unit operating in accordance with the adjusted high-frequency parameter. The tentative high-frequency parameter provides a value different from a value of the high-frequency parameter for achieving a maximum acceleration in design to a high-frequency resonator in a part of stages including at least a most downstream stage. The adjusting includes changing at least one of a voltage amplitude and a phase set for the high-frequency resonator in the part including the at least most downstream stage.

An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.

A cross-section processing and observation method performed by a cross-section processing and observation apparatus comprises a cross-section processing step of forming a cross-section by irradiating a sample with an ion beam; a cross-section observation step of obtaining an observation image of the cross-section by irradiating the cross-section with an electron beam; and repeating the cross-section processing step and the cross-section observation step so as to obtain observation images of a plurality of cross-sections. In a case where Energy Dispersive X-ray Spectrometry (EDS) measurement of the cross-section is performed and an X-ray of a specified material or of a non-specified material that is different from a pre-specified material is detected, an irradiation condition of the ion beam is changed so as to obtain observation images of a plurality of cross-sections of the specified material, and the cross-section processing and observation of the specified material is performed.

A system for manufacturing of three dimensional objects by layered deposition is provided. The system includes a base substrate for formation of three dimensional objects placed on a supporting plate; a functional assembly comprising a gas-discharge electron beam gun, a feedstock guide, a cold annular cathode and two annular anode electrodes, a high voltage power supply of the gas-discharge electron beam gun, a system of precise positioning of the supporting plate with the base substrate), a vacuum tight operation chamber, a vacuum subsystem for creating of necessary vacuum inside said operating chamber, a control system and a magnetic lens. The lens is placed on the underside of the gas-discharge electron beam gun coaxially with it and with the feedstock guide, providing the possibility of transformation of a primary hollow electron beam to the shape of a hollow inverted cone after leaving the discharge chamber of the gas-discharge electron beam gun.

According to one aspect of the present invention, a charged particle beam apparatus includes fogging charged particle amount distribution operation processing circuitry that operates a fogging charged particle amount distribution by performing convolution integration of a distribution function in which a design distribution center of fogging charged particles is shifted and a exposure intensity distribution in which a design irradiation center of a charged particle beam is not shifted; positional displacement operation processing circuitry that operates a positional displacement based on the fogging charged particle amount distribution; correction processing circuitry that corrects an irradiation position using the positional displacement; and a charged particle beam column including an emission source that emits the charged particle beam and a deflector that deflects the charged particle beam to irradiate a corrected irradiation position with the charged particle beam.