The present invention provides a method for optimizing a shaped working beam having a sharp edge for making sufficiently precise cuts and a high beam current for faster processing. An ion beam is directed along an optical column through a reference aperture to form a reference beam that has a preferred shape and an associated reference current. The reference beam is optimized using selected parameters of the optical components within the optical column. The ion beam is then directed through a working aperture to form a working beam for use in a processing application. The working beam has a different shape from the reference beam and an associated working current that is higher than the reference current. The reference aperture and working aperture have at least one corresponding dimension. The working beam is then optimized using the selected optical component parameters used to align and focus the reference beam.

An X-ray standard reference object for calibrating a scanning electron beam in an additive manufacturing apparatus by measuring X-ray signals generated by scanning the electron beam onto the reference object, the reference object comprises: a lower and an upper plate being essentially in parallel and attached spaced apart from each other, the upper plate comprises a plurality of holes, wherein a predetermined hollow pattern is provided inside the holes.

An ion implantation method includes generating a first ion beam and a second ion beam, the first ion beam having a different configuration from the second ion beam. The method further includes scanning and directing the first ion beam along a first path toward a workpiece to perform ion implantation on the workpiece. The method alternatively includes directing the second ion beam along a second path toward the workpiece to perform ion implantation on the workpiece. The first path is different from the second path.

A multi charged particle beam writing method includes assigning, for each unit irradiation region per beam of multi-beams, each divided shot obtained by dividing a shot of a maximum irradiation time and continuously irradiate the same unit irradiation region, to at least one of a plurality of beams that can be switched by collective deflection; calculating, for each unit irradiation region, an irradiation time; determining, for each unit irradiation region, whether to make each divided shot be beam on or off so that the total irradiation time for a plurality of corresponding divided shots to be beam on may become a combination equivalent to the irradiation time calculated; and applying, to the corresponding unit irradiation region, the plurality of corresponding divided shots to be beam on, using the plurality of beams while switching a beam between beams by collective deflection.

Various embodiments herein relate to methods and apparatus for performing anisotropic ion beam etching to form arrays of channels. The channels may be formed in semiconductor material, and may be used in a gate-all-around device. Generally speaking, a patterned mask layer is provided over a layer of semiconductor material. Ions are directed toward the substrate while the substrate is positioned in two particular orientations with respect to the ion trajectory. The substrate switches between these orientations such that ions impinge upon the substrate from two opposite angles. The patterned mask layer shadows/protects the underlying semiconductor material such that the channels are formed in intersecting shadowed regions.

An x-ray breast imaging system includes a breast support platform including an x-ray receptor, and an x-ray tube head. The x-ray tube head includes an x-ray source configured to emit an x-ray beam in a direction towards the x-ray receptor, and a collimator. A filter assembly including a plurality of filter slots selectively positionable adjacent to the collimator, and a specimen imaging filter disposed within a slot of the plurality of filter slots. The specimen imaging filter includes at least one aperture defined therein. The specimen imaging filter also blocks a portion of the emitted x-ray beam so that the at least one aperture defines a path of the emitted x-ray beam towards the x-ray receptor.

A beam current adjuster for an ion implanter includes a variable aperture device which is disposed at an ion beam focus point or a vicinity thereof. The variable aperture device is configured to adjust an ion beam width in a direction perpendicular to an ion beam focusing direction at the focus point in order to control an implanting beam current. The variable aperture device may be disposed immediately downstream of a mass analysis slit. The beam current adjuster may be provided with a high energy ion implanter including a high energy multistage linear acceleration unit.

Methods, devices and systems for patterning of substrates using charged particle beams without photomasks and without a resist layer. Material can be deposited onto a substrate, as directed by a design layout database, localized to positions targeted by multiple, matched charged particle beam columns. Reducing the number of process steps, and eliminating lithography steps, in localized material addition has the dual benefit of reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Furthermore, highly localized, precision material deposition allows for controlled variation of deposition rate and enables creation of 3D structures. Local gas injectors and detectors, and local photon injectors and detectors, are local to corresponding ones of the columns, and can be used to facilitate rapid, accurate, targeted, highly configurable substrate processing, advantageously using large arrays of said beam columns.

A method is provided for forming a three-dimensional article through successive fusion of parts of a powder bed. The method includes the steps of: applying a first powder layer on a work table; directing an electron beam from an electron beam source over the work table, the directing of the electron beam causing the first powder layer to fuse in first selected locations according to a pre-determined model, so as to form a first part of a cross section of the three dimensional article, and intensity modulating X-rays from the powder layer or from a clean work table with a patterned aperture modulator and a patterned aperture resolver, wherein a verification of at least one of a size, position, scan speed, or shape of the electron beam is achieved by comparing detected intensity modulated X-ray signals with saved reference values.

Methods for processing of a workpiece are disclosed. The actual rate at which different portions of an ion beam can process a workpiece, referred to as the processing rate profile, is determined by measuring the amount of material removed from, or added to, a workpiece by the ion beam as a function of ion beam position. An initial thickness profile of a workpiece to be processed is determined. Based on the initial thickness profile, a target thickness profile, and the processing rate profile of the ion beam, a first set of processing parameters are determined. The workpiece is then processed using this first set of processing parameters. In some embodiments, an updated thickness profile is determined after the first process and a second set of processing parameters are determined. A second process is performed using the second set of processing parameters. Optimizations to improve throughput are also disclosed.