The present disclosure provides a substrate-processing apparatus. The substrate-processing apparatus includes an ion implanter and a controller associated with the ion implanter. The ion implanter is configured to implant ions into a substrate using an ion beam. The controller is configured to monitor an initial implantation profile of the ion beam and tune the ion implanter to provide the ion beam having a desired implantation profile based on the initial implantation profile and the desired implantation profile.

The present invention relates to an apparatus and a method for an electron beam system for manufacturing a three-dimensional object by fusing successive layers of powder, said system having at least one lens for reshaping of said electron beam, an electron source and a powder bed, said method comprising the step: blocking a selected cross section of said electron beam for controlling the electron beam power. By interference between the electron beam and a beam blocking part a portion of the electron beam is prevented from reaching the powder bed.

A multiple charged particle beam writing apparatus includes a margined block region generation circuit to generate plural margined block regions each formed by adding a margin region to the periphery of each block region of plural block regions obtained by dividing the writing region of the target object, a detection circuit to detect a defective beam in multiple charged particle beams, a specifying circuit to specify, for each defective beam detected, a position irradiated with the defective beam, and an affiliation determination circuit to determine a margined block region, in the plural margined block regions, to which the position irradiated with the defective beam belongs, based on conditions set according to a sub-block region, in plural sub-block regions acquired by dividing the margined block region, in which the position irradiated with the defective beam in the multiple charged particle beams is located.

A specimen machining device for machining a specimen by irradiating the specimen with an ion beam includes an ion source for irradiating the specimen with the ion beam, a specimen stage for holding the specimen, a camera for photographing the specimen, an information provision unit for providing information indicating an expected machining completion time, and a storage unit for storing past machining information. The information provision unit performs processing for calculating the expected machining completion time based on the past machining information, processing for acquiring an image photographed by the camera, processing for calculating a machining speed based on the acquired image, and processing for updating the expected machining completion time based on the machining speed.

A multi-charged particle beam writing apparatus includes a movable stage to mount a substrate thereon, a shot data generation circuit to generate shot data of each shot of multiple charged particle beams, a shift amount calculation circuit to calculate a shift amount for collectively correcting positions of all of the multiple charged particle beams of the k-th shot, based on parameters related to at least the (k+1)th and subsequent shots (k being a natural number) of the multiple charged particle beams, and a writing mechanism including a deflector for deflecting the multiple charged particle beams, and to perform the k-th shot onto the substrate with the multiple charged particle beams while shifting the all of the multiple charged particle beams of the k-th shot by collective deflection according to the shift amount.

An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.

The invention relates to charged particle beam generator comprising a charged particle source for generating a charged particle beam, a collimator system comprising a collimator structure with a plurality of collimator electrodes for collimating the charged particle beam, a beam source vacuum chamber comprising the charged particle source, and a generator vacuum chamber comprising the collimator structure and the beam source vacuum chamber within a vacuum, wherein the collimator system is positioned outside the beam source vacuum chamber. Each of the beam source vacuum chamber and the generator vacuum chamber may be provided with a vacuum pump.

A multi-charged particle beam writing apparatus includes a movable stage to mount a substrate thereon, a shot data generation circuit to generate shot data of each shot of multiple charged particle beams, a shift amount calculation circuit to calculate a shift amount for collectively correcting positions of all of the multiple charged particle beams of the k-th shot, based on parameters related to at least the (k+1)th and subsequent shots (k being a natural number) of the multiple charged particle beams, and a writing mechanism including a deflector for deflecting the multiple charged particle beams, and to perform the k-th shot onto the substrate with the multiple charged particle beams while shifting the all of the multiple charged particle beams of the k-th shot by collective deflection according to the shift amount.

A multi-beam writing method includes acquiring a plurality of deflection coordinates for deflecting a beam to each of a plurality of pixels which are in each beam pitch region of a plurality of beam pitch regions, a number of pixels to be exposed by a beam in the each beam pitch region during each of tracking control period performed such that the multiple beams collectively follow a movement of a stage, and a deflection movement amount of the multiple beams at a time of tracking reset for resetting a tracking starting position after each of the tracking control period has passed; and generating a deflection sequence defined using the plurality of deflection coordinates, the number of pixels to be exposed during each of the tracking control period, and the deflection movement amount of the multiple beams at the time of tracking reset.

A method for depth controlled ion milling, the method may include (a) ion milling a calibrated area and a target area; wherein the ion milling comprises exposing an interior of the calibrated area to provide an exposed interior of the calibrated area; wherein the target area comprises a buried region of interest that is positioned at a certain depth; wherein the calibrated area comprises a certain layer that is positioned at the certain depth; wherein the certain layer is visually distinguishable from another layer of the calibrated area that is precedes the certain layer; (ii) monitoring a progress of the milling by viewing the exposed interior of the calibrated area; and (iii) controlling of the ion milling based on an outcome of the monitoring.