A specimen machining device includes an ion source which irradiates a specimen with an ion beam, a first rotating body (specimen holder) that holds the specimen and is rotatable about a first axis serving as a rotation axis, and a second rotating body on which the first rotating body is disposed and which is rotatable about a second axis serving as a rotation axis different from the first axis. The specimen machining device irradiates the specimen with the ion beam while moving the specimen by the rotation of the first rotating body and the rotation of the second rotating body.

An extraction plate for an ion beam system. The extraction plate may include an insulator body that includes a peripheral portion, to connect to a first side of a plasma chamber, and further includes a central portion, defining a concave shape. As such, an extraction aperture may be arranged along a first surface of the central portion, where the first surface is oriented at a high angle with respect to the first side. The extraction plate may further include a patterned electrode, comprising a first portion and a second portion, affixed to an outer side of the insulator body, facing away from the plasma chamber, wherein the first portion is separated from the second portion by an insulating gap.

There is provided a technique that includes: imaging a gas supply hole configured to supply a plasma-converted gas into a process chamber by using an imaging device disposed in the process chamber; detecting a plasma emission intensity based on an image of the imaged gas supply hole; and determining at least one of whether abnormal plasma discharge has occurred and whether plasma flickering has occurred based on the detected plasma emission intensity.

A substrate processing apparatus includes a chamber which has a processing room in which a substrate is processed, a cover which is provided in the processing room and is provided between the substrate and the chamber, and a heater which is provided only on the cover among the chamber and the cover and heats the cover.

An ion beam processing system including a plasma chamber, a plasma plate, disposed alongside the plasma chamber, the plasma plate defining a first extraction aperture, a beam blocker, disposed within the plasma chamber and facing the extraction aperture, a blocker electrode, disposed on a surface of the beam blocker outside of the plasma chamber, and an extraction electrode disposed on a surface of the plasma plate outside of the plasma chamber.

Embodiments described herein relate to methods of forming gratings with different slant angles on a substrate and forming gratings with different slant angles on successive substrates using angled etch systems. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle θ relative to a surface normal of the substrates and form gratings in the grating material. The substrates are rotated about an axis of the platen resulting in rotation angles ϕ between the ion beam and a surface normal of the gratings. The gratings have slant angles θ′ relative to the surface normal of the substrates. The rotation angles ϕ selected by an equation ϕ=cos.sup.−1(tan(θ′)/tan(θ)).

To provide an ion milling apparatus adapted to suppress the contamination of a beam forming electrode. The ion milling apparatus includes: an ion gun containing therein a beam forming electrode for forming an ion beam; a specimen holder for fixing a specimen to be processed by irradiation of an ion beam; a mask for shielding a part of the specimen from the ion beam; and an ion gun controller for controlling the ion gun.

An ion beam etching tool comprises a chuck configured to electrostatically receive a wafer; a plasma source configured to introduce an ion beam to the wafer; and a shield on the chuck and configured to shield the chuck from the ion beam. The shield comprises a material that is configured to be one of removable from the wafer or inert with regard to a semiconductor device on the wafer.

A method for the surface treatment of a substrate surface of a substrate includes arranging the substrate surface in a process chamber, bombarding the substrate surface with an ion beam, generated by an ion beam source and aimed at the substrate surface, to remove impurities from the substrate surface, whereby the ion beam has a first component, and introducing a second component into the process chamber to bind the removed impurities. A device for the surface treatment of a substrate surface of a substrate includes a process chamber for receiving the substrate, an ion beam source for generating an ion beam that has a first component and is aimed at the substrate surface to remove impurities from the substrate surface, and means to introduce a second component into the process chamber to bind the removed impurities.

A system may include a substrate stage to support a substrate, and a plurality of beam sources. The plurality of beam sources may include an ion beam source, the ion beam source arranged to direct an ion beam to the substrate, and a radical beam source, the radical beam source arranged to direct a radical beam to the substrate. The system may include a controller configured to control the ion beam source and the radical beam source to operate independently of one another, in at least one aspect, wherein the at least one aspect includes beam composition, beam angle of incidence, and relative scanning of a beam source with respect to the substrate.