Methods for processing of a workpiece are disclosed. The actual rate at which different portions of an ion beam can process a workpiece, referred to as the processing rate profile, is determined by measuring the amount of material removed from, or added to, a workpiece by the ion beam as a function of ion beam position. An initial thickness profile of a workpiece to be processed is determined. Based on the initial thickness profile, a target thickness profile, and the processing rate profile of the ion beam, a first set of processing parameters are determined. The workpiece is then processed using this first set of processing parameters. In some embodiments, an updated thickness profile is determined after the first process and a second set of processing parameters are determined. A second process is performed using the second set of processing parameters. Optimizations to improve throughput are also disclosed.

A method for treating a silicon substrate, and a silicon substrate, provide a surface treated with an accelerated neutral beam.

Embodiments described herein relate to apparatus and methods for performing electron beam reactive plasma etching. In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. The electrode has an electron emitting surface disposed at a nonparallel angle relative to a major axis of a substrate assembly. The EBRPE apparatus may further comprise a capacitive or inductive coupled plasma generator. In another embodiment, methods for etching a substrate include generating a plasma and bombarding an electrode with ions from the plasma to cause the electrode to emit electrons. The electrons are accelerated toward a substrate to induce directional etching of the substrate. During the EBPRE process, the substrate or electrode is actuated through a process volume during the etching.

Embodiments described herein relate to apparatus and methods for performing electron beam etching process. In one embodiment, a method of etching a substrate includes delivering a process gas to a process volume of a process chamber, applying a RF power to an electrode formed from a high secondary electron emission coefficient material disposed in the process volume, generating a plasma comprising ions in the process volume, bombarding the electrode with the ions to cause the electrode to emit electrons and form an electron beam, applying a negative DC power to the electrode, accelerating electrons emitted from the bombarded electrode toward a substrate disposed in the process chamber, and etching the substrate with the accelerated ions.

A substrate processing method includes etching a target film formed on a substrate through an opening of a mask formed on the target film with plasma generated from a mixed gas obtained by adding a gas having a carbonyl bond to a halogen-containing gas. The target film contains silicon and the mask is formed of a transition metal.

Disclosed are embodiments of an ion beam sample preparation and coating apparatus and methods. A sample may be prepared in one or more ion beams and then a coating may be sputtered onto the prepared sample within the same apparatus. A vacuum transfer device may be used with the apparatus in order to transfer a sample into and out of the apparatus while in a controlled environment. Various methods to improve preparation and coating uniformity are disclosed including: rotating the sample retention stage; modulating the sample retention stage; variable tilt ion beam irradiating means, more than one ion beam irradiating means, coating thickness monitoring, selective shielding of the sample, and modulating the coating donor holder.

Embodiments described herein relate to methods and apparatus for forming gratings having a plurality of fins with different slant angles on a substrate and forming fins with different slant angles on successive substrates using angled etch systems and/or an optical device. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle relative to a surface normal of the substrates and form gratings in the grating material.

Embodiments described herein relate to methods and apparatus for forming gratings having a plurality of fins with different slant angles on a substrate and forming fins with different slant angles on successive substrates using angled etch systems and/or an optical device. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle relative to a surface normal of the substrates and form gratings in the grating material.

A system may include a substrate stage, configured to support a substrate, where a main surface of the substrate defines a substrate plane. The system may include an ion source, including an extraction assembly that is oriented to direct an ion beam to the substrate along a trajectory defining a non-zero angle of incidence with respect to a perpendicular to the substrate plane. The system may include a radical source oriented to direct a radical beam to the substrate along a trajectory defining the non-zero angle of incidence with respect to a perpendicular to the substrate plane. The substrate stage may be further configured to scan the substrate along a first direction, lying with the substrate plane, while the main surface of the substrate is oriented within the substrate plane.

Embodiments herein provide systems and methods for multi-area selecting etching. In some embodiments, a system may include a plasma source delivering a plurality of angled ion beams to a substrate, the substrate including a plurality of devices. Each of the plurality of devices may include a first angled grating and a second angled grating. The system may further include a plurality of blocking masks positionable between the plasma source and the substrate. A first blocking mask of the plurality of blocking masks may include a first set of openings permitting the angled ion beams to pass therethrough to form the first angled gratings of each of the plurality of devices. A second blocking mask of the plurality of blocking masks may include a second set of openings permitting the angled ion beams to pass therethrough to form the second angled gratings of each of the plurality of devices.