It is difficult to perform surface modification by irradiating a side surface of a hole formed on an irradiated object with a low-energy-density electron beam. An irradiated object having an irradiation hole formed thereon is disposed in a vacuum chamber. A cathode electrode is arranged to face a side surface of the irradiation hole. The cathode electrode has a large number of metal projections over an entire surface of a base body, the base body facing at least the side surface of the irradiation hole. A conductive mesh is arranged between the cathode electrode and the side surface of the irradiation hole. The conductive mesh partially contacts the irradiated object and is set to have the same potential as the irradiated object.

A method includes forming a resist pattern over a structure, the resist pattern having a trench surrounded by first resist walls extending lengthwise along a first direction and second resist walls extending lengthwise along a second direction perpendicular to the first direction. The method includes loading the structure and the resist pattern into an ion implanter so that a top surface of the resist pattern faces an ion travel direction of the ion implanter. The method includes tilting the structure and the resist pattern so that the ion travel direction forms a tilt angle with respect to an axis perpendicular to the top surface of the resist pattern. The method includes first rotating the structure and the resist pattern around the axis to a first position. The method includes first implanting ions into the resist pattern with the structure and the resist pattern at the first position.

A single beam plasma or ion source apparatus, including multiple and different power sources, is provided. An aspect of the present apparatus and method employs simultaneous excitation of an ion source by DC and AC, or DC and RF power supplies. Another aspect employs an ion source including multiple magnets and magnetic shunts arranged in a generally E cross-sectional shape.

An article composed of sintered particles is produced by depositing ligand-containing particles on a substrate, then scanning the substrate with an electron beam that generates sufficient surface and subsurface heating to substantially eliminate the ligands and melt or sinter the particles into a cohesive film with superior charge carrier properties. The particles are sintered or melted together to form a polycrystalline layer that is substantially ligand-free to form, for example, a film such as a continuous polycrystalline film. The scanning operation is conducted so as to heat treat a controllably localized region at and below a surface of the particles by selecting a rate of deposited energy at the region to exceed a rate of conduction away from the substrate.

Disclosed is a manufacturing method of an iron-based alloy medical apparatus, comprising: nitriding the iron-based alloy preformed unit at 350-550 C. for 30-100 minutes; and ion etching the iron-based alloy preformed unit with an ion etching time of 80-110% of the nitriding time. Ion nitriding and ion etching can be performed in situ in the same equipment using this manufacture method with high production efficiency, and in the ion nitriding and ion etching process, nitrogen atoms continuously permeate the preformed unit, making the time it takes for the medical apparatus to be absorbed by the human body and both the hardness and strength of the instrument surface achieve requirements.

There are provided non-destructive methods for incorporating an atom such as N into a material such as graphene. The methods can comprise subjecting a gas comprising the atom to conditions to obtain a flowing plasma afterglow then exposing the material to the flowing plasma afterglow. There are also provided materials such as N-doped graphene produced by such methods.

A method of extracting and accelerating ions is provided. The method includes providing a ion source. The ion source includes a chamber. The ion source further includes a first hollow cathode having a first hollow cathode cavity and a first plasma exit orifice and a second hollow cathode having a second hollow cathode cavity and a second plasma exit orifice, the first and second hollow cathodes being disposed adjacently in the chamber. The ion source further includes a first ion accelerator between and in communication with the first plasma exit orifice and the chamber. The first ion accelerator forms a first ion acceleration cavity. The ion source further includes a second ion accelerator between and in communication with the second plasma orifice and the chamber. The second ion accelerator forms a second ion acceleration cavity. The method further includes generating a plasma using the first hollow cathode and the second hollow cathode. The first hollow cathode and the second hollow cathode are configured to alternatively function as electrode and counter-electrode. The method further includes extracting and accelerating ions. Each of the first ion acceleration cavity and the second ion acceleration cavity are sufficient to enable the extraction and acceleration of ions.

There is provided an ion milling apparatus that can enhance reproducibility of ion distribution. The ion milling apparatus includes an ion source 101, a sample stage 102 on which a sample processed by radiating a non-convergent ion beam from the ion source 101 is placed, a drive unit 107 that moves a measurement member holding section 106 holding an ion beam current measurement member 105 along a track located between the ion source and the sample stage, and an electrode 112 that is disposed near the track, in which a predetermined positive voltage is applied to the electrode 112, the ion beam current measurement member 105 is moved within a radiation range of the ion beam by the drive unit 107, in a state in which the ion beam is output from the ion source 101 under a first radiation condition, and an ion beam current that flows when the ion beam is radiated to the ion beam current measurement member 105 is measured.

A method for creating a first data set for modifying an irradiation plan parameter data set used for controlling an irradiation system for irradiating a target volume in an irradiation volume using an ion beam includes defining a sensitive volume within the biological material to be irradiated, determining a fluence distribution of the ion beam, determining a microscopic dose distribution of the ion beam, determining, from the microscopic dose distribution of the ion beam, a spatial microscopic damage distribution of the ion beam, determining an expected value for a number of correlated damage events in a sub-micrometer range in the sensitive volume from the spatial microscopic damage distribution of the ion beam in the sensitive volume, determining the effect of the ion beam on the biological material, and storing data that indicate the effect of the ion beam on the material.

A method includes removing a damaged lens from a lithography tool; generating an initial profile of a new lens based on a surface profile of the damaged lens; optimizing the initial profile of the new lens by simulating an optical property of the new lens in the lithography tool to generate an optimized profile; fabricating the new lens based on the optimized profile; and mounting the new lens in the lithography tool in place of the damaged lens.