A method for planning a beam path for material deposition is provided in which a structure pattern having features of varying size is analyzed to determine the size of each feature. A beam path throughout the structure pattern is determined and the beam current required for each point in the structure pattern is configured. Configuring the beam current required for each point involves determining the acceptable beam dose for that point. Relatively small features require a low beam current for high accuracy and relatively large features can be formed using a higher beam current allowing faster deposition. Each feature in the structure pattern is deposited at the highest beam current acceptable to allow accurate deposition of the feature.

Plasma micro nozzle adapters having various configurations and operating principles are disclosed. The plasma micro nozzle adapter is employed with a commercial plasma jet printer to produce smaller printed features than those possible with the original plasma jet printer. In a first class of embodiments, the plasma micro nozzle adapter narrows a plasma jet using electrostatic or magnetostatic lensing, permitting the printing of ceramic, metallic, dielectric, or plastic features with line widths of 10 ?m or less. In a second class of embodiments, the plasma micro nozzle adapter narrows the plasma jet using a gas sheath. By adjusting the flow rate or pressure of the gas used to form the gas sheath, the cross-sectional shape of the plasma jet may form, for example, an ellipse, thereby controlling the width of the printed feature. A third class of embodiments employs both electrostatic (or magnetostatic) lensing along with the gas sheath.

An apparatus and method provides a drug layer formed on a surface region of a medical device, the drug layer comprised of a drug deposition and a carbonized or densified layer formed from the drug deposition by irradiation on an outer surface of the drug deposition, wherein the carbonized or densified layer does not penetrate through the drug deposition and is adapted to release drug from the drug deposition at a predetermined rate.

Beam-induced etching uses a work piece maintained at a temperature near the boiling point of a precursor material, but the temperature is sufficiently high to desorb reaction byproducts. In one embodiment, NF.sub.3 is used as a precursor gas for electron-beam induced etching of silicon at a temperature below room temperature.

An apparatus and method for the creation of negative ion beams is disclosed. The apparatus includes an RF ion source, having an extraction aperture. An antenna disposed proximate a dielectric window is energized by a pulsed RF power supply. While the RF power supply is actuated, a plasma containing primarily positive ions and electrons is created. When the RF power supply is deactivated, the plasma transforms into an ion-ion plasma. Negative ions may be extracted from the RF ion source while the RF power supply is deactivated. These negative ions, in the form of a negative ribbon ion beam, may be directed toward a workpiece at a specific incident angle. Further, both a positive ion beam and a negative ion beam may be extracted from the same ion source by pulsing the bias power supply multiple times each period.

A system for implanting ions into a workpiece while minimizing the generation of particles is disclosed. The system includes an ion source having an extraction plate with an extraction aperture. The extraction plate is electrically biased and may also be coated with a dielectric material. The workpiece is disposed on a platen and surrounded by an electrically biased shield. The shield may also be coated with a dielectric material. In operation, a pulsed DC voltage is applied to the shield and the platen, and ions are attracted from the ion source during this pulse. Since a pulsed voltage is used, the impedance of the thin dielectric coating is reduced, allowing the system to function properly.

The present invention relates to an automatic sequence for repeatedly performing SEM observation and FIB processing by using a low acceleration voltage for a long time. In order to realize very accurate three-dimensional structure/composition analysis, in the automatic sequence for repeatedly performing sample observation using a scanning electron microscope using a CFE electron source and sample processing using a FIB device, low temperature flushing using the CFE electron source is performed at predetermined timing except for a SEM observation time. According to the present invention, the automatic sequence for repeatedly performing the sample observation using the scanning electron microscope using the CFE electron source and the sample processing using the FIB device can be performed for a long time. Therefore, it is possible to acquire a SEM image which achieves high resolution and improved current stability while the low acceleration voltage is used.

An ion beam treatment or implantation system includes an ion source emitting a plurality of parallel ion beams having a given spacing. A first lens magnet having a non-uniform magnetic field receives the plurality of ion beams from the ion source and focuses the plurality of ion beams toward a common point. The system may optionally include a second lens magnet having a non-uniform magnetic field receiving the ion beams focused by the first lens magnet and redirecting the ion beams such that they have a parallel arrangement having a closer spacing than said given spacing in a direction toward a target substrate.

A sample stand includes a base portion that is made of a first material and has an arcuate outer edge in a plane having a first direction and a second direction orthogonal to the first direction, a first portion that is provided on an upper portion of the base portion in the second direction and in which a second material is embedded, a second portion that is provided on the upper portion of the base portion in the second direction and in which a third material is embedded, and a sample holding portion on which a sample is to be held. The sample holding portion is provided on the upper portion of the base portion in the second direction, between the first portion and the second portion in a third direction orthogonal to each of the first direction and the second direction.

An object of the present invention is to provide: a wiring method in which wiring is performed in a vacuum chamber of a charged particle device without using gas deposition or the like; and a charged particle device.

In order to achieve the above-described object, the present invention proposes: a wiring method in which a wiring line composed of an ionic liquid is formed by dropping an ionic liquid on a sample or preparing an ionic liquid on a sample table, on which a sample is placed in advance, and irradiating a wiring track between a wiring start point and a wiring end point with a charged particle beam; and a charged particle device. According to this configuration, wiring can be performed in a vacuum chamber of a charged particle device without using a gas deposition method or the like.