An etching method includes: (a) providing, on a support, a substrate having the first region covering the second region and the second region defining a recess receiving the first region, (b) etching the first region until or immediately before the second region is exposed, (c) exposing the substrate to plasma generated from a first process gas containing C and F atoms using a first RF signal and forming a deposit on the substrate, (d) exposing the deposit to plasma generated from a second process gas containing an inert gas using a first RF signal and selectively etching the first region to the second region, and (e) repeating (c) and (d). (c) includes using the RF signal with a frequency of 60 to 300 MHz and/or setting the support to 100 to 200° C. to control a ratio of C to F atoms in the deposit to greater than 1.

Embodiments disclosed herein include a monolithic source array. In an embodiment, the monolithic source array comprises a dielectric plate having a first surface and a second surface opposite from the first surface. The monolithic source array may further comprise a plurality of protrusions that extend out from the first surface of the dielectric plate, wherein the plurality of protrusions and the dielectric plate are a monolithic structure.

A semiconductor manufacturing apparatus for forming a film on a substrate by sputtering a target based on a recipe for performing film formation is provided. The apparatus comprises: a storage device configured to store an adjustment coefficient for adjusting a film quality of the formed film based on the recipe; a monitoring device configured to monitor a used amount of the target; a compensation device configured to calculate a compensation value for compensating at least one of process conditions set in the recipe by inputting the used amount of the target monitored by the monitoring device and the adjustment coefficient into a calculation formula; and a recipe execution device configured to execute film formation based on the recipe and the compensation value.

Embodiments of the present disclosure generally relate to methods, apparatus, and systems for maintaining film modulus within a predetermined modulus range. In one implementation, a method of processing substrates includes introducing one or more processing gases to a processing volume of a processing chamber, and depositing a film on a substrate supported on a substrate support disposed in the processing volume. The method includes supplying simultaneously a first radiofrequency (RF) power and a second RF power to one or more bias electrodes of the substrate support. The first RF power includes a first RF frequency and the second RF power includes a second RF frequency that is less than the first RF frequency. A modulus of the film is maintained within a predetermined modulus range.

A sputtering apparatus includes a placement portion where a target having a first opening is placed, an anode, and a metal member. The anode and the metal member are disposed at positions corresponding to the first opening of the target in the placement portion. The anode and the metal member are electrically insulated from each other. The metal member is set to a ground potential or a floating potential.

Some implementations described herein provide a shutter disc for use during a conditioning process within a processing chamber of a deposition tool. The shutter disc described herein includes a material having a wave-shaped section to reduce heat transfer to the shutter disc and to provide relief from thermal stresses. Furthermore, the shutter disc includes a deposition of a thin-film material on a backside of the shutter disc, where a diameter of the shutter disc causes a spacing between an inner edge of the thin-film material and an outer edge of a substrate support component. The spacing prevents an accumulation of material between the thin film material and the substrate support component, reduces tilting of the shutter disc due to a placement error, and reduces heat transfer to the shutter disc.

A plasma processing apparatus 100, which has an impact on global warming and allows for high-throughput plasma processing, includes a chamber 1 in which plasma is generated, a mounting table 2 disposed in the chamber, wherein a substrate S is mounted on the mounting table 2, and a gas supply source 3 (3a to 3d) for supplying gas for generating plasma in the chamber, wherein the substrate is subjected to deep etching by executing alternately and repeatedly an etching process S2 of etching the substrate by using plasma and a protective film deposition process S3 of depositing a protective film in a recess formed through the etching process by using plasma. It is characterized in that, in the protective film deposition process S3, a mixed gas of C.sub.4F.sub.8 and 2,3,3,3-tetrafluoropropene is supplied from the gas supply sources 3b, 3c into the chamber as gas supplied for generating plasma.

A system and method are described for depositing a material onto a receiving surface, where the material is formed by use of a plasma to modify a source material in-transit to the receiving surface. The system comprises a microwave generator electronics stage. The system further includes a microwave applicator stage including a cavity resonator structure. The cavity resonator structure includes an outer conductor, an inner conductor, and a resonator cavity interposed between the outer conductor and the inner conductor. The system also includes a multi-component flow assembly including a laminar flow nozzle providing a shield gas, a zonal flow nozzle providing a functional process gas, and a source material flow nozzle configured to deliver the source material. The source material flow nozzle and zonal flow nozzle facilitate a reaction between the source material and the functional process gas within a plasma region.

A semiconductor device, a semiconductor equipment, and a semiconductor process method. The semiconductor process method includes a phase of wafer adsorption and a phase of wafer release and charge release. The phase of wafer adsorption includes: a power supply unit outputting an operating voltage to an electrostatic chuck, so as to control the electrostatic chuck to adsorb a wafer. The phase of wafer release and charge release includes: adjusting a voltage outputted by the power supply unit from the operating voltage to a charge release voltage, and maintaining for a first preset time to release some of the charges accumulated on the electrostatic chuck so as to avoid abnormal discharge; and switching the electrostatic chuck to be connected to a protective resistor, and maintaining for a second preset time to release the remaining charges accumulated on the electrostatic chuck.

Methods and systems for forming a structure including multiple carbon layers and structures formed using the method or system are disclosed. Exemplary methods include forming a first carbon layer and a second carbon layer, wherein a density and/or other property of the first carbon layer differs from the corresponding property of the second carbon layer.