Embodiments of process kits are provided herein. In some embodiments, a process kit, includes: a deposition ring configured to be disposed on a substrate support, the deposition ring comprising: an annular band having an upper surface and a lower surface, the lower surface including a step between a radially inner portion and a radially outer portion, the step extending downward from the radially inner portion to the radially outer portion; an inner lip extending upwards from the upper surface of the annular band and adjacent an inner surface of the annular band, and wherein an outer surface of the inner lip extends radially outward and downward from an upper surface of the inner lip to the upper surface of the annular band; a channel disposed radially outward of the annular band; and an outer lip extending upwardly and disposed radially outward of the channel.

Objects of the present invention consist in achievement of both of elongation of life of a sputtering target as well as uniformity of a thickness of a resulting thin coating layer formed on a substrate during the period. The present invention provides a sputtering target comprising a target material, which is characterized in that the target material has a sputtering surface having a first area placed at the center, which is circular and flat; and a second area placed outside of the first area and concentrically with the first area, which has a ring shape, wherein the first area is positioned at a location lower than that of the second area by 15% of thickness of the second area at most, and the first area has a diameter which is ranging from 60% to 80% of a circumferential diameter of the sputtering surface.

The present disclosure provides a thin-film-deposition equipment with shielding device, which includes a reaction chamber, a carrier and a shielding device. The shielding device includes a first-carry arm, a second-carry arm, a first-shield member, a second-shield member and a driver. The driver interconnects the first-carry arm and the second first-carry arm, for driving and swinging the first-shield member and the second-shield member to move in opposite directions via the first-carry arm and the second first-carry arm. During a cleaning process, the driver swings the shield members toward each other into a shielding state for covering the carrier, such that to prevent polluting the carrier during the process of cleaning the thin-film-deposition equipment.

A sputter deposition apparatus including: a remote plasma generation arrangement arranged to provide a plasma for sputter deposition of target material within a sputter deposition zone; a confining arrangement arranged to provide a confining magnetic field to substantially confine the plasma in the sputter deposition zone a substrate provided within the sputter deposition zone; and one or more target support assemblies arranged to support one or more targets in the sputter deposition zone so as to provide for sputter deposition of the target material on the substrate. The confining arrangement confines the remote plasma to the target support assemblies such that in use there is deposited: target material as a first region on the substrate; target material as a second region on the substrate; and an intermediate region between the first and second region with no target material.

A semiconductor device manufacturing apparatus according to an embodiment includes: a chamber; a holder provided in the chamber and capable of adsorbing a substrate, the holder including a recess on a surface, a first hole provided in the recess, and a second hole provided in the recess; a first gas passage connected to the first hole; a second gas passage connected to the second hole; a first valve provided in the first gas passage; a second valve provided in the second gas passage; a first gas supply pipe for supplying a first gas to the recess; and a gas discharge pipe for discharging a gas from the recess. The first gas passage and the second gas passage are connected to the first gas supply pipe, or the first gas passage and the second gas passage are connected to the gas discharge pipe.

The present disclosure provides a position-detectable shielding device, which includes a first-shield member, a second-shield member, a driver and two position sensors. The driver includes a motor, an outer tube and a main shaft within the outer tube. The motor is connected to the first-shield member and the second-shield member, respectively via the outer tube and the main shaft. Such that, the motor drives and swings the two shield members between a shielding state and an open state. The two position sensors are respectively disposed for detecting that the outer tube has rotated to a first position where the first-shield member is in the open state, and for detecting that the outer tube has rotated to a second position where the first-shield member is in the shielding state, thereby to confirm that the two shield members are exactly at the preset shielding state or the open state.

Methods and apparatus for processing a substrate are provided herein. For example, a cooling apparatus for use with a substrate support of a processing chamber comprises a heat exchanger, a manifold assembly comprising a first input configured to connect to an output of the heat exchanger, a second input configured to connect to a first coolant supply configured to supply a first coolant, a first output configured to connect to the substrate support of the processing chamber, and a second output configured to connect to an input of the heat exchanger, a gas input configured to connect to a second coolant supply that is configured to supply a second coolant that is different from the first coolant to the substrate support, a first three-way valve connected between the first output of the manifold assembly and the substrate support and connected between the gas input and the substrate support, and a controller configured to control supplying one of the first coolant or the second coolant during operation.

Embodiments of this disclosure relate to methods for depositing gapfill materials by a plasma ALD cycle including a plasma deactivation outside of and near the top of the substrate feature. Some embodiments of the disclosure relate to methods for filling reentrant features without void formation. In some embodiments, the gapfill material comprises one or more of silicon nitride and titanium nitride.

In one embodiment, a method of matching an impedance is disclosed. An impedance matching network is coupled between a radio frequency (RF) source and a plasma chamber. The matching network includes a variable reactance element (VRE) having different positions for providing different reactances. The RF source has an RF source control circuit carrying out a power control scheme to control a power delivered to the matching network. Based on a determined parameter, a new position for the VRE is determined to reduce a reflected power at the RF input of the matching network. The matching network provides a notice signal to the RF source indicating the VRE will be altered. In response to the notice signal, the RF source control circuit alters the power control scheme. While the power control scheme is altered, the VRE is altered to the new position.

A sputter deposition apparatus including: a substrate support assembly arranged to support a substrate; a target support assembly arranged to support at least one sputter target for use in a sputter deposition of a target material onto the substrate; a plasma generation arrangement arranged to provide plasma for said sputter deposition; and a cartridge arranged to contain the substrate with deposited target material after said sputter deposition. The cartridge is removable from the sputter deposition apparatus.