Methods include producing tunable carbon structures and combining carbon structures with a polymer to form a composite material. Carbon structures include crinkled graphene. Methods also include functionalizing the carbon structures, either in-situ, within the plasma reactor, or in a liquid collection facility. The plasma reactor has a first control for tuning the specific surface area (SSA) of the resulting tuned carbon structures as well as a second, independent control for tuning the SSA of the tuned carbon structures. The composite materials that result from mixing the tuned carbon structures with a polymer results in composite materials that exhibit exceptional favorable mechanical and/or other properties. Mechanisms that operate between the carbon structures and the polymer yield composite materials that exhibit these exceptional mechanical properties are also examined.

According to the present disclosure, there is provided a technique capable of efficiently heating a substrate with a light emitted from a lamp heater. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process vessel at least a part of which is made of opaque quartz; a substrate mounting table provided in the process vessel or in a processing space communicating with an inside of the process vessel; a lamp heater provided at a position facing a substrate placing surface of the substrate mounting table; and a plasma generator provided at an outer periphery of the process vessel and configured to excite a gas in the process vessel by a plasma.

Methods include producing tunable carbon structures and combining carbon structures with a polymer to form a composite material. Carbon structures include crinkled graphene. Methods also include functionalizing the carbon structures, either in-situ, within the plasma reactor, or in a liquid collection facility. The plasma reactor has a first control for tuning the specific surface area (SSA) of the resulting tuned carbon structures as well as a second, independent control for tuning the SSA of the tuned carbon structures. The composite materials that result from mixing the tuned carbon structures with a polymer results in composite materials that exhibit exceptional favorable mechanical and/or other properties. Mechanisms that operate between the carbon structures and the polymer yield composite materials that exhibit these exceptional mechanical properties are also examined.

A plasma treatment apparatus includes a discharge device generating plasma under atmospheric pressure, and a nonmetallic tube capable of advancing the plasma generated in the discharge device. The discharge device includes a discharge body with an internal space, and the plasma being generated in the internal space. The nonmetallic tube is connected to the discharge body, and includes a material different from a material of the discharge body. The plasma is released from the nonmetallic tube to an environment under atmospheric pressure.

A gas-delivery assembly and reactor system including the gas-delivery system are disclosed. The gas-delivery assembly includes a transport tube and a baffle to facilitate desired distribution of gas that can include activated species.

Methods include producing tunable carbon structures and combining carbon structures with a polymer to form a composite material. Carbon structures include crinkled graphene. Methods also include functionalizing the carbon structures, either in-situ, within the plasma reactor, or in a liquid collection facility. The plasma reactor has a first control for tuning the specific surface area (SSA) of the resulting tuned carbon structures as well as a second, independent control for tuning the SSA of the tuned carbon structures. The composite materials that result from mixing the tuned carbon structures with a polymer results in composite materials that exhibit exceptional favorable mechanical and/or other properties. Mechanisms that operate between the carbon structures and the polymer yield composite materials that exhibit these exceptional mechanical properties are also examined.

According to various embodiments, a wafer chuck may include at least one support region configured to support a wafer in a receiving area; a central cavity surrounded by the at least one support region configured to support the wafer only along an outer perimeter; and a boundary structure surrounding the receiving area configured to retain the wafer in the receiving area.

A method for depositing a silicon oxide film is provided. In the method, a silicon oxide film is deposited on a substrate by Atomic Layer Deposition with plasma while heating the substrate to a first temperature of 600° C. or higher. The silicon oxide film is annealed at a second temperature higher than the first temperature after completing the depositing the silicon oxide film.

A method of manufacturing a semiconductor device includes: (a) generating a reactive species by plasma-exciting a process gas containing oxygen and hydrogen; and (b) supplying the reactive species to a substrate and oxidizing surfaces of a silicon film and a silicon nitride film formed to be exposed respectively on the substrate, wherein a ratio of oxygen and hydrogen contained in the process gas is adjusted such that a ratio of a thickness of a second oxide layer formed by oxidizing the surface of the silicon nitride film to a thickness of a first oxide layer formed by oxidizing the surface of the silicon film in (b) becomes a predetermined thickness ratio.

A method for recovering ashing rate in a plasma processing chamber includes positioning a substrate in a processing volume of a processing chamber, wherein the substrate has a silicon chloride residue formed thereon. The method further includes evaporating the silicon chloride residue from the substrate. The method further includes depositing the evaporated silicon chloride on one or more interior surfaces in the processing volume. The method further includes exposing the deposited silicon chloride to an oxidizing environment to convert the deposited silicon chloride to a silicon oxide passivation layer. The oxidizing environment can comprise an oxygen-containing plasma, oxygen radicals, or a combination thereof