Methods include producing a plurality of carbon particles in a plasma reactor, functionalizing the plurality of carbon particles in-situ in the plasma reactor to promote adhesion to a binder, and combining the plurality of carbon particles with the binder to form a composite material. The plurality of carbon particles comprises 3D graphene, where the 3D graphene comprises a pore matrix and graphene nanoplatelet sub-particles in the form of at least one of: single layer graphene, few layer graphene, or many layer graphene. Methods also include producing a plurality of carbon particles in a plasma reactor; functionalizing, in the plasma reactor, the plurality of carbon particles to promote chemical bonding with a resin; and combining, within the plasma reactor, the functionalized plurality of carbon particles with the resin to form a composite material.

Provided is a method for etching an atomic layer. The method for etching the atomic layer includes providing a substrate to a process chamber, wherein the process chamber comprises a first chamber part and a second chamber part, and the substrate is provided in the second chamber part, generating adsorption gas plasma in the first chamber part, adsorbing radicals of the adsorption gas plasma to the substrate so as to form a treatment layer, generating etching gas plasma in the first chamber part, and allowing electrons and ions of the etching gas plasma to be alternately incident into the treatment layer so as to perform desorption of the treatment layer.

Provided herein is a method for producing hollow contact areas for insertion bonding, formed on a semiconductor substrate comprising a stack of one or more metallization layers on a surface of the substrate. Openings are etched in a dielectric layer by plasma etching, using a resist layer as a mask. The resist layer and plasma etch parameters are chosen to obtain openings with sloped sidewalls having a pre-defined slope, due to controlled formation of a polymer layer forming on the sidewalls of the resist hole and the hollow contact opening formed during etching. According to a preferred embodiment, metal deposited in the hollow contact areas and on top of the dielectric layer is planarized using chemical mechanical polishing, leading to mutually isolated contact areas. The disclosure is also related to components obtainable by the method and to a semiconductor package comprising such components.

Provided are a substrate processing method and a substrate processing apparatus for forming a low-resistance metal-containing nitride film. The substrate processing method includes: a step of providing a substrate in a processing container; a step of forming a metal-containing nitride film on the substrate by repeating supplying an organic metal-containing gas and a nitrogen-containing gas alternately for a first predetermined number of cycles; a step of modifying the metal-containing nitride film by generating plasma in the processing container; and a step of repeating the step of forming the metal-containing nitride film and the step of modifying the metal-containing nitride film for a second predetermined number of cycles.

Devices and methods for selectively etching a metal nitride layer are disclosed. The methods comprise an oxidation step and an etching step which are optionally separated by a purge, and which can be repeated in a cyclical etching process.

A method for producing graphene, configured for forming a graphene layer on a surface of an object. The method includes steps of: depositing a poly-p-xylene material layer on the surface: and converting the poly-p-xylene material layer into a graphene layer by using a laser sintering process or a plasma-assisted sintering process.

A technique includes (a) providing a substrate on which a first film containing at least one selected from the group of a combination of CH bonds and SiC bonds and a combination of NH bonds and SiN bonds is formed, (b) modifying the first film into a second film by performing heat processing to the first film at a processing temperature higher than a processing temperature at which the first film is formed, and (c) modifying the second film into a third film by performing plasma processing to the second film so that a ratio of SiC bonds to CH bonds in the third film is made larger than a ratio of SiC bonds to CH bonds in the first film, or a ratio of SiN bonds to NH bonds in the third film is made larger than a ratio of SiN bonds to NH bonds in the first film.

A film forming method includes (A) to (C) below. (A) A liquid to a surface of a substrate including a recess and a protrusion, which are adjacent to each other, is supplied on the surface. (B) A processing gas that chemically changes the liquid is supplied to the surface of the substrate to move the liquid from the recess to the protrusion by a reaction between the liquid and the processing gas and to form a film on the top surface of the protrusion, thereby expanding a step difference formed on the surface. (C) A portion of the film is etched.

A plasma treatment apparatus includes a discharge device generating plasma under atmospheric pressure, and a nonmetallic tube capable of advancing the plasma generated in the discharge device. The discharge device includes a discharge body with an internal space, and the plasma being generated in the internal space. The nonmetallic tube is connected to the discharge body, and includes a material different from a material of the discharge body. The plasma is released from the nonmetallic tube to an environment under atmospheric pressure.

The plasma reactor of the invention is intended for treating the surfaces of objects such as semiconductor wafers and large display panels, or the like, with plasma. The main part of the plasma reactor is an array of RF antenna cells, which are deeply immersed into the interior of the working chamber. Each antenna cell has a ferromagnetic core with a heat conductor and a coil wound onto the core. The core and coil are sealed in the protective cap. Deep immersion of the antenna cells having the structure of the invention provides high efficiency of plasma excitation, while the arrangement of the plasma cells and possibility of their individual adjustment provide high uniformity of plasma distribution and possibility of adjusting plasma parameters, such as plasma density, in a wide range.