An apparatus, comprising a film (103) comprising a network of conductive and/or semi-conductive high aspect ratio molecular structures is presented. The apparatus also comprises a frame (102) arranged to support the film (103) at least at least two support positions so that a free-standing region (101) of the film (103) extends between the at least two support positions. The two or more electrical contact areas electrically coupled to the film (103), and these electrical contact areas are arranged to pass electric charge across the free-standing region (101) of the film (103) at a current between 0.01 and 10 amperes.

An apparatus, comprising a film (103) comprising a network of conductive and/or semi-conductive high aspect ratio molecular structures is presented. The apparatus also comprises a frame (102) arranged to support the film (103) at least at least two support positions so that a free-standing region (101) of the film (103) extends between the at least two support positions. The two or more electrical contact areas electrically coupled to the film (103), and these electrical contact areas are arranged to pass electric charge across the free-standing region (101) of the film (103) at a current between 0.01 and 10 amperes.

A method and apparatus for maintaining a free-standing region of a film including a network of High Aspect Ratio Molecular structures (HARM-structures). The method includes electrically coupling the film to two or more electrodes at two or more peripheral locations of the film and passing electric charge across the free-standing region of the film to create a magnetic attraction between the HARM-structures in the network.