According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include forming a second layer covering a first layer on a first region of a semiconductor substrate. The semiconductor substrate includes the first region and a second region. The first layer covers the second region and a portion of the first region. First openings are formed. The method can include removing the first layer on the second region using the second layer as a mask. The method can include forming an impurity region including an n-type impurity in the second region. The method can include removing the second layer, and growing silicon layers inside the first openings and on the second region. In addition, the method can include polishing a portion of each of the silicon layers using the first layer as a stopper.

A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided. The ingots and wafers comprise nitrogen at a concentration of at least about 11014 atoms/cm3 and/or germanium at a concentration of at least about 11019 atoms/cm3, interstitial oxygen at a concentration of less than about 6 ppma, and a resistivity of at least about 1000 ohm cm.

There is provided a configuration that includes a substrate holder configured to hold substrates; a transfer mechanism configured to transfer the substrates to the substrate holder; and a controller configured to: acquire a number of substrates mountable on the substrate holder and a number of the product substrates to be mounted on the substrate holder; divide the product substrates into product substrate groups; divide the dummy substrates into dummy substrate groups based on the number of the product substrates, the number of the substrates mountable on the substrate holder, and a number of the product substrate groups; combine the product substrate groups and the dummy substrate groups; create substrate arrangement data for distributing and mounting the product substrates on the substrate holder; and cause the transfer mechanism to transfer the substrates according to the substrate arrangement data.

Embodiments of the present disclosure generally relate to an optically transparent substrate, comprising a major surface having a peripheral edge region with an orientation feature formed therein, and a texture formed on the peripheral edge region, the texture having an opacity that is greater than an opacity of the major surface.

The present invention relates to a method for separating solid-body slices (1) from a donor substrate (2). The method comprises the steps of: producing modifications (10) within the donor substrate (2) by means of laser beams (12), wherein a detachment region is predefined by the modifications (10), along which detachment region the solid-body layer (1) is separated from the donor substrate (2), and removing material from the donor substrate (2), starting from a surface (4) extending in the peripheral direction of the donor substrate (2), in the direction of the centre (Z) of the donor substrate (2), in particular in order to produce a peripheral indentation (6).

A silicon wafer is capable of reducing the warpage of the wafer occurring during a device process and allowing the subsequent processes, which have been suffered from problems due to severe warping of the wafer, to be carried out without problems and its manufacturing method. A silicon wafer according to the present invention is a silicon wafer in which there is formed a multilayered film constituting a semiconductor device layer on one main surface thereof in a device process, which is warped in a bowl shape due to an isotropic film stress of the multilayered film, and which has a (111) plane orientation.

There is provided a configuration that includes a substrate holder configured to hold substrates; a transfer mechanism configured to transfer the substrates to the substrate holder; and a controller configured to: acquire a number of substrates mountable on the substrate holder and a number of the product substrates to be mounted on the substrate holder; divide the product substrates into product substrate groups; divide the dummy substrates into dummy substrate groups based on the number of the product substrates, the number of the substrates mountable on the substrate holder, and a number of the product substrate groups; combine the product substrate groups and the dummy substrate groups; create substrate arrangement data for distributing and mounting the product substrates on the substrate holder; and cause the transfer mechanism to transfer the substrates according to the substrate arrangement data.

A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot, including a separation start point forming step of setting the focal point of a laser beam inside the ingot at a predetermined depth from the ingot's upper surface, which depth corresponds to the thickness of the wafer to be produced, and next applying the laser beam while relatively moving the focal point and the ingot to thereby form: (i) a modified layer parallel to the ingot's upper surface, and (ii) cracks extending from the modified layer, thus forming a separation start point. The laser beam is applied to form the modified layer in a condition where the relation of 0.3(dx)/d0.5 holds, where d is the diameter of a focused spot of the laser beam and x is the spacing between adjacent focused spots of the laser beam.

An SiC substrate processing method includes a separation layer forming step of setting a focal point of a laser beam having a transmission wavelength to SiC inside an SiC substrate and next applying the laser beam to the SiC substrate to thereby form a separation layer inside the SiC substrate, the SiC substrate having a first surface and a second surface opposite to the first surface; a first plate attaching step of attaching a first plate to the first surface of the SiC substrate; a second plate attaching step of attaching a second plate to the second surface of the SiC substrate; and a separating step of applying an external force to the separation layer after performing the first plate attaching step and the second plate attaching step, thereby separating the SiC substrate into a first SiC substrate and a second SiC substrate along the separation layer.

A method for processing a crystalline substrate to form multiple patterns of subsurface laser damage facilitates subsequent fracture of the substrate to yield first and second substrate portions of reduced thickness. Multiple (e.g., two, three, or more) groups of parallel lines of multiple subsurface laser damage patterns may be sequentially interspersed with one another, with at least some lines of different groups not crossing one another. Certain implementations include formation of multiple subsurface laser damage patterns including groups of parallel lines that are non-parallel to one another, but with each line remaining within 5 degrees of perpendicular to the <1120> direction of a hexagonal crystal structure of a material of the substrate. Further methods involve formation of initial and subsequent subsurface laser damage patterns that are centered at different depths within an interior of a substrate, with the subsurface laser damage patterns being registered with one another and having vertical extents that are overlapping.