Semiconductor devices and fin field effect transistors (FinFETs) are disclosed. In some embodiments, a representative semiconductor device includes a group III material over a substrate, the group III material comprising a thickness of about 2 monolayers or less, and a group III-V material over the group III material.

Disclosed herein are systems and methods for treating the surface of a microelectronic substrate, and in particular, relate to an apparatus and method for scanning the microelectronic substrate through a cryogenic fluid mixture used to treat an exposed surface of the microelectronic substrate. In particular, an improved nozzle design used to expand the fluid mixture is disclosed herein. In one embodiment, the nozzle design incorporates a two nozzle pieces are combined to form a single nozzle design, in which the two pieces are slight misaligned to form a unique orifice design. In another embodiment, two pieces are combined and aligned along a common axis of the fluid conduit. However, an offset piece is inserted between the two pieces and has a hole that misaligned from the flow conduits of the two other pieces.

A cleaning device comprises a carrier and a cleaning unit. On the surface of the carrier, the cleaning unit comprises cleaning bodies of trapezoidal cylinders with a first surface and two inclined planes. The first surface is parallel to the surface of the carrier. The inclined planes face the circumference of the carrier and are separately located between adjacent two of the cleaning bodies. The first surface has a distance of 6.5 mm±10% to the surface of the carrier. The inclined planes at two sides have an angle of 50°±10% in between. When the cleaning body starts contacting a wafer, one of the inclined planes is deformed as a beginning. Then, gentle area changes is formed from contacting until departing between the cleaning body and the wafer. The wafer is thus stably forced to improve cleaning ability of scrubbing and stabilize surface friction of the wafer.

Improved methods for chemically etching silicon are provided herein. In some embodiments, a method of etching a silicon material includes: (a) exposing the silicon material to a halogen-containing gas; (b) evacuating the halogen-containing gas from the semiconductor processing chamber; (c) exposing the silicon material to an amine vapor to etch a monolayer of the silicon material; (d) evacuating the amine vapor from the semiconductor processing chamber and; (e) optionally repeating (a)-(d) to etch the silicon material to a predetermined thickness.

This disclosure relates to a cleaning composition that contains 1) hydroxylamine, 2) an amino alcohol, 3) hexylene glycol, and 4) water.

A method of cleaning a surface of a substrate uses alcohol and water treatments. The method may include applying an alcohol treatment on a surface of the substrate with the alcohol treatment configured to provide surface reduction and applying a water treatment to the surface of the substrate with the water treatment configured to enhance selectivity of at least a portion of the surface for a subsequent barrier layer process by removing alcohol from the at least a portion of the surface. The water treatment may be performed simultaneously with the alcohol treatment or performed after the alcohol treatment. The water treatment may include vaporized water or water injected into a plasma to produce hydrogen or oxygen radicals.

A method of making a device substrate article having a device modified substrate supported on a glass carrier substrate, including: treating at least a portion of the first surface of a device substrate, at least a portion of a first surface of a glass carrier, or a combination thereof, wherein the treating produces a surface having: silicon; oxygen; carbon; and fluorine amounts; and a metal to fluorine ratio as defined herein; contacting the treated surface with an untreated or like-treated counterpart device substrate or glass carrier substrate to form a laminate comprised of the device substrate bonded to the glass carrier substrate; modifying at least a portion of the non-bonded second surface of the device substrate of the laminate with at least one device surface modification treatment; and separating the device substrate having the device modified second surface from the glass carrier substrate.

Methods and apparatus for processing a substrate include cleaning and self-assembly monolayer (SAM) formation for subsequent reverse selective atomic layer deposition. An apparatus may include a process chamber with a processing volume and a substrate support including a pedestal, a remote plasma source fluidly coupled to the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate, a first gas delivery system with a first ampoule configured to provide at least one first chemical into the processing volume to produce a SAM on the surface of the substrate, a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate, and a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate.

Disclosed herein are systems and methods for treating the surface of a microelectronic substrate, and in particular, relate to an apparatus and method for scanning the microelectronic substrate through a cryogenic fluid mixture used to treat an exposed surface of the microelectronic substrate. The fluid mixture may be expanded through a nozzle to form an aerosol spray or gas cluster jet (GCJ) spray and may impinge the microelectronic substrate and remove particles from the microelectronic substrate's surface. In one embodiment, a two-stage gas nozzle may be used to expand a fluid mixture with a liquid phase concentration of greater than 10% by weight.

This disclosure relates to a cleaning composition that contains 1) hydroxylamine, 2) an amino alcohol, 3) hexylene glycol, and 4) water.