A semiconductor device that is a chip-size-package-type semiconductor device that is facedown mountable includes: a semiconductor layer including a semiconductor substrate and a low-concentration impurity layer in contact with an upper surface of the semiconductor substrate; a metal layer having a thickness of at least 10 m; a first vertical MOS transistor in the semiconductor layer; and a second vertical MOS transistor in the semiconductor layer. A side surface of the metal layer includes roughness forming vertical stripes in a direction perpendicular to the metal layer, and has a maximum height of profile greater than 1.0 m. In a plan view of the semiconductor device, an area occupancy of a formation containing metal in the metal layer is at most 5% in a 10-m square region located at least 13 m inward from an outer edge of the semiconductor device, within an upper surface of the semiconductor device.

Methods and tools for de-bonding and cleaning substrates are disclosed. A method includes de-bonding a surface of a first substrate from a second substrate, and after de-bonding, cleaning the surface of the first substrate. The cleaning comprises physically contacting a cleaning mechanism to the surface of the first substrate. A tool includes a de-bonding module and a cleaning module. The de-bonding module comprises a first chuck, a radiation source configured to emit radiation toward the first chuck, and a first robot arm having a vacuum system. The vacuum system is configured to secure and remove a substrate from the first chuck. The cleaning module comprises a second chuck, a spray nozzle configured to spray a fluid toward the second chuck, and a second robot arm having a cleaning device configured to physically contact the cleaning device to a substrate on the second chuck.

A cleaning system and method use an ultrasound probe, a coupling mechanism, and a controller to clean equipment of a vehicle system. The ultrasound probe enters into an engine. The ultrasound probe emits ultrasound pulses and the coupling mechanism provides an ultrasound coupling medium between the ultrasound probe and one or more components of the engine. The controller drives the ultrasound probe to deliver the ultrasound pulse through the coupling medium to a surface of the one or more components of the engine. The ultrasound probe delivers the ultrasound pulse to remove deposits from the one or more components of the engine.

A method of processing a wafer includes coating the front side of the wafer with a water-soluble liquid resin to form a thin film; fixing the wafer to a protective plate for protecting the front side of the wafer, with a bond material interposed between the protective plate and the thin film; holding by a chuck table the protective plate with the wafer fixed thereto and grinding the back side of the wafer to make the wafer have a predetermined thickness; releasing step of releasing the bond material together with the protective plate to which the wafer has been fixed; and supplying water to the bond material remaining on the front side of the wafer to remove the thin film together with the bond material.

A device manufacturing method according to an embodiment includes forming a film on the side of a second surface of a substrate having a first surface and the second surface, cutting the substrate, cutting the film, and injecting particles onto at least one of a first cut portion formed by the cutting of the substrate and a second cut portion formed by the cutting of the film, to process the at least one of the first cut portion or the second cut portion.

In a wafer processing method, a protective film is formed by applying a liquid resin to the front side of a wafer. A protective tape is adhered to a surface of the protective film. A modified layer is formed by applying a laser beam having such a wavelength as to be transmitted through the wafer along each of division lines, with a focal point positioned inside the wafer. The modified layer is formed inside the wafer along each of the division lines. The back side of the wafer is ground while supplying grinding water to thin the wafer to a predetermined thickness and to crack the wafer along the division lines using the modified layers as crack starting points so as to divide the wafer into individual device chips, after the protective film is formed, the protective tape is adhered, and the modified layer is formed.

A device manufacturing method according to an embodiment includes forming a film on the second surface side of a substrate having a first surface and the second surface, forming a trench in part of the substrate from the first surface side, while leaving the film to remain, and injecting a substance onto the film from the second surface side, to remove the film at the portion on the second surface side of the trench.

A wafer processing method includes a wafer holding step of holding a wafer having devices formed on the front side, a protective film forming step of forming a water-soluble protective film on the front side of the wafer, a laser beam applying step of applying a laser beam to the wafer along streets, a cleaning step of cleaning the wafer to then remove the protective film, and a foreign matter removing step of removing foreign matter from the wafer when a predetermined period of time has elapsed after cleaning. This period of time is set as a period of time until a phosphorus containing reaction product produced at a laser processed portion is evaporated to react with water in the air, thereby producing the foreign matter containing phosphorus on bumps formed on each device.

A method of fabricating a semiconductor package is disclosed. The method includes forming a plurality of semiconductor chips and a mold layer covering the semiconductor chips on a substrate, forming outer terminals on a bottom surface of the substrate, coating a water-soluble material on the bottom surface of the substrate and the outer terminals to form a coating layer, cutting the substrate and the mold layer to separate the semiconductor chips from each other, and forming a shielding layer on the cutted mold layer.

Consistent with an example embodiment, a method for preparing integrated circuit (IC) device die from a wafer substrate having a front-side with active devices and a back-side, comprises mounting the front-side of the wafer onto protective foil. A laser is applied to saw lane areas on the backside of the wafer, at a first focus depth to define a modification zone; the modification zone defined at a pre-determined depth within active device boundaries and the active device boundaries defined by the saw lane areas. The protective foil is stretched to separate IC device die from one another and expose active device side-walls. With dry-etching of the active device side-walls, the modification zone is substantially removed.