Some embodiments relate to a processing tool for processing a singulated semiconductor die. The tool includes an evaluation unit, a drying unit, and a die wipe station. The evaluation unit is configured to subject the singulated semiconductor die to a liquid to detect flaws in the singulated semiconductor die. The drying unit is configured to dry the liquid from a frontside of the singulated semiconductor die. The die wipe station includes an absorptive drying structure configured to absorb the liquid from a backside of the singulated semiconductor die after the drying unit has dried the liquid from the frontside of the singulated semiconductor die.

A method for processing electronic die includes providing a substrate having a plurality of electronic die formed as part of the substrate and separated from each other by spaces. The method includes placing the substrate onto a first carrier substrate. The method includes plasma etching the substrate through the spaces to form singulation lines adjacent the plurality of electronic die. The method includes exposing the plurality of electronic die to solvent vapors, such as heated solvent vapors, under reduced pressure to reduce the presence of residual contaminants resulting from the plasma etching step.

A semiconductor package is disclosed. The semiconductor package includes a substrate with a first surface, a second surface and sidewalls. The package also includes backside metallization (BSM) over the second surface of the substrate. The semiconductor package is devoid of metal debris.

Described implementations include a contaminant-free plasma singulation process, in which residues of materials used during plasma singulation are fully removed from sidewalls of a resulting semiconductor die, without damaging the semiconductor die. From such a contaminant-free plasma singulation process, a semiconductor die may be manufactured. The semiconductor die may include a first plurality of sidewall recesses formed in a sidewall of a substrate of the semiconductor die between a first surface and a second surface of the substrate, each having at most a first depth, as well as a second plurality of sidewall recesses formed in the sidewall of the substrate and disposed between the first plurality of sidewall recesses and the second surface, each having at least a second depth that is greater than the first depth.

A mask-integrated surface protective film, containing: a substrate film, and a mask material layer provided on the substrate film;
wherein the mask material layer is an ethylene-vinyl acetate copolymer resin, an ethylene-methyl acrylate copolymer resin, or an ethylene-butyl acrylate copolymer resin; and
wherein the thickness of the mask material layer is 50 m or less.

A method for processing electronic die includes providing a substrate having a plurality of electronic die formed as part of the substrate and separated from each other by spaces. The method includes placing the substrate onto a first carrier substrate. The method includes plasma etching the substrate through the spaces to form singulation lines adjacent the plurality of electronic die. The method includes exposing the plurality of electronic die to solvent vapors, such as heated solvent vapors, under reduced pressure to reduce the presence of residual contaminants resulting from the plasma etching step.

An element chip smoothing method including: an element chip preparation step of preparing at least one element chip including a first surface covered with a resin film, a second surface opposite the first surface, and a sidewall connecting the first surface to the second surface and having ruggedness; a sidewall cleaning step of exposing the element chip to a first plasma, to remove deposits adhering to the sidewall, with the resin film allowed to continue to exist; a sidewall oxidation step of exposing the element chip to a second plasma, after the sidewall cleaning step, to oxidize a surface of the sidewall, with the resin film allowed to continue to exist; and a sidewall etching step of exposing the element chip to a third plasma, after the sidewall oxidation step, to etch the sidewall, with the resin film allowed to continue to exist.

Implementations of methods of forming a plurality of semiconductor die may include forming a damage layer beneath a surface of a die street in a semiconductor substrate, singulating the semiconductor substrate along the die street into a plurality of semiconductor die, and removing one or more particulates in the die street after singulating through applying sonic energy to the plurality of semiconductor die.

A surface protective tape, which is used for a method of producing a semiconductor chip including the steps (a) to (d), and contains a substrate film, and a radiation-curable temporary-adhesive layer and a radiation-curable mask material layer provided on the film in this order; wherein, in the step (b), peeling occurs between the temporary-adhesive layer and the mask material layer before irradiation, and between the mask material layer and the patterned surface described below after irradiation: (a) in the state of having laminated the tape on the side of a patterned surface of a semiconductor wafer, grinding the backing-face of the wafer; laminating a wafer fixing tape on the backing-face side of the ground wafer; and supporting and fixing the wafer to a ring flame; (b) after integrally peeling both the film and the temporary-adhesive layer from the tape thereby to expose the mask material layer on top, forming an opening by cutting a portion of the mask material layer corresponding to a street of the wafer with a laser; (c) a plasma-dicing step of segmentalizing the wafer on the street by a SF.sub.6 plasma, and thereby for singulating the wafer into semiconductor chips; and (d) an ashing step of removing the mask material layer by an O.sub.2 plasma.

A substrate has first and second surfaces, and includes a plurality of element regions and dividing region defining the element regions. A method for manufacturing an element chip includes: a step of spray coating, to the first surface of the substrate, a mixture containing a water-soluble resin and an organic solvent having a higher vapor pressure than water, and drying the coated mixture at a temperature of 50 C. or less, to form a protective film; a laser grooving step of removing portions of the protective film covering the dividing regions; a step of dicing the substrate into element chips by plasma etching the substrate; and a step of removing the portions of the protective film covering the element regions. The mixture has a solid component ratio of 200 g/L or more, and droplets of the sprayed mixture have an average particle size of 12 m or less.