A method of making a device substrate article having a device modified substrate supported on a glass carrier substrate, including: treating at least a portion of the first surface of a device substrate, at least a portion of a first surface of a glass carrier, or a combination thereof, wherein the treating produces a surface having: silicon; oxygen; carbon; and fluorine amounts; and a metal to fluorine ratio as defined herein; contacting the treated surface with an untreated or like-treated counterpart device substrate or glass carrier substrate to form a laminate comprised of the device substrate bonded to the glass carrier substrate; modifying at least a portion of the non-bonded second surface of the device substrate of the laminate with at least one device surface modification treatment; and separating the device substrate having the device modified second surface from the glass carrier substrate.

A method for recovering carbon-face-polarized silicon carbide substrates, including: providing an epitaxial structure, the epitaxial structure includes a carbon-face-polarized silicon carbide substrate to be recovered, as well as a nitrogen-face-polarized gallium nitride buffer layer, a barrier layer and a nitrogen-face-polarized gallium nitride channel layer that are sequentially deposited on the silicon carbide substrate; removing the nitrogen-face-polarized gallium nitride buffer layer, the barrier layer and the nitrogen-face-polarized gallium nitride channel layer by wet etching; and cleaning and blowing dry the carbon-face-polarized silicon carbide substrate.

A polysilicon chip reclamation assembly includes a polysilicon cleaning apparatus configured to clean a plurality of bodies of polysilicon. Also included is a plurality of polysilicon chips generated from the bodies of polysilicon during cleaning thereof, wherein each of the plurality of polysilicon chips has a longest dimensional length ranging from 0.1 mm to 25.0 mm. Further included is a polysilicon apparatus drain line configured to route the plurality of polysilicon chips from the polysilicon cleaning apparatus to a main chip drain line, wherein the main chip drain line is oriented at a downward slope away from the polysilicon apparatus drain line. Yet further included is a fluid source fluidly coupled to the main chip drain line and configured to inject a fluid into the main chip drain line to drive the plurality of polysilicon chips through the main chip drain line.

A method for fault detection in a fabrication facility is provided. The method includes moving a wafer carrier using a transportation apparatus. The method further includes measuring an environmental condition within the wafer carrier or around the wafer carrier using a metrology tool positioned on the wafer carrier during the movement of the wafer carrier. The method also includes issuing a warning when the detected environmental condition is outside a range of acceptable values.

A method of fabricating a graphene device generally involving depositing a graphene monolayer from a carbon source on a metal catalyst layer; depositing a transfer substrate on the graphene monolayer by way of casting, thereby forming a transfer-substrate/graphene/metal-catalyst structure; annealing the transfer-substrate/graphene/metal-catalyst structure, thereby forming an annealed transfer-substrate/graphene/metal-catalyst structure; coupling a thermal adhesive with the transfer-substrate/graphene/metal-catalyst structure; moving the annealed transfer-substrate/graphene/metal-catalyst structure to a target area of a target device, by using a probe assembly or the like, thereby forming an annealed transfer-substrate/graphene/metal-catalyst/thermal-adhesive/target-device structure; releasing the slip of thermal adhesive from the annealed transfer-substrate/graphene/metal-catalyst thermal-adhesive/target-device structure by applying heat, thereby forming an annealed transfer-substrate/graphene/metal-catalyst/target-device structure; etching away the metal catalyst layer from the annealed transfer-substrate/graphene/metal-catalyst/target-device structure in an etching solution, thereby forming a graphene/transfer-substrate/target-device structure; rinsing the graphene/transfer-substrate/target-device structure with DI water, thereby removing any excess etching solution; and drying the graphene/transfer-substrate/target-device structure, thereby providing the graphene device.

An ultrasonic cleaning method of the invention includes: a cleaning liquid coating step (S101), coating a cleaning liquid on a front surface of an electronic component held on a cleaning stage; a pealing step (S103), irradiating the front surface of the electronic component coated with the cleaning liquid with ultrasonic waves from ultrasonic speakers installed to an acoustic head and peeling off a foreign matter attached to the front surface from the front surface; and an attracting step (S104), concentrating the ultrasonic waves generated from the ultrasonic speakers at a gap between a casing and a holding surface of the cleaning stage to form a low pressure region whose pressure is lower than atmospheric pressure at a central lower part of the casing, and attracting the foreign matter peeled off from the front surface of the electronic component and the cleaning liquid coated on the front surface.

A semiconductor structure comprising a carrier wafer and a device wafer. The carrier wafer comprises trenches sized and configured to receive conductive pillars of the device wafer. The carrier wafer and the device wafer are fusion bonded together and back side processing effected on the device wafer. The device wafer may be released from the carrier wafer by one or more of mechanically cleaving, thermally cleaving, and mechanically separating. Methods of forming the semiconductor structure including the carrier wafer and the device wafer are disclosed.

A polysilicon chip reclamation assembly includes a polysilicon cleaning apparatus configured to clean a plurality of bodies of polysilicon. Also included is a plurality of polysilicon chips generated from the bodies of polysilicon during cleaning thereof, wherein each of the plurality of polysilicon chips has a longest dimensional length ranging from 0.1 mm to 25.0 mm. Further included is a polysilicon apparatus drain line configured to route the plurality of polysilicon chips from the polysilicon cleaning apparatus to a main chip drain line, wherein the main chip drain line is oriented at a downward slope away from the polysilicon apparatus drain line. Yet further included is a fluid source fluidly coupled to the main chip drain line and configured to inject a fluid into the main chip drain line to drive the plurality of polysilicon chips through the main chip drain line.

An ultrasonic cleaning method of the invention includes: a cleaning liquid coating step (S101), coating a cleaning liquid on a front surface of an electronic component held on a cleaning stage; a pealing step (S103), irradiating the front surface of the electronic component coated with the cleaning liquid with ultrasonic waves from ultrasonic speakers installed to an acoustic head and peeling off a foreign matter attached to the front surface from the front surface; and an attracting step (S104), concentrating the ultrasonic waves generated from the ultrasonic speakers at a gap between a casing and a holding surface of the cleaning stage to form a low pressure region whose pressure is lower than atmospheric pressure at a central lower part of the casing, and attracting the foreign matter peeled off from the front surface of the electronic component and the cleaning liquid coated on the front surface.

A method for manufacturing a restored substrate includes: removing a nitride semiconductor layer from a stacked-layer in which the nitride semiconductor layer has been laminated on a substrate; oxidizing material adhering to the substrate to produce an oxide deposit after the removing of the nitride semiconductor layer from the stacked-layer; and removing the oxide deposit from the substrate. A method for manufacturing a light emitting element includes stacking nitride semiconductor layers including an active layer on the restored substrate obtained by the above method.