The present disclosure provides a method for cleaning a lanthanum gallium silicate wafer which comprises the following steps: at a step of 1, a cleaning solution constituted of phosphorous acid, hydrogen peroxide and deionized water is utilized to clean the lanthanum gallium silicate wafer with a megahertz sound wave; at a step of 2, the cleaned lanthanum gallium silicate wafer is rinsed and dried by spinning; at a step of 3, a cleaning solution constituted of ammonia, hydrogen peroxide and deionized water is utilized to clean the lanthanum gallium silicate wafer with the megahertz sound wave; at a step of 4, the cleaned lanthanum gallium silicate wafer is rinsed and dried by spinning; and at a step of 5, the rinsed and dried wafer is placed in an oven to be baked. The present invention shortens a period of acidic cleaning process and prolongs a period of alkaline cleaning and utilizes a more effective cleaning with megahertz sound wave to replace the conventional ultrasonic cleaning to solve the issue of cleaning the lanthanum gallium silicate wafer after a cutting process and to improve surface cleanliness of the lanthanum gallium silicate wafer to get a better cleaning effect.

According to one embodiment, a method including supplying a liquid onto a substrate, solidifying the liquid on the substrate to form a solidified body, and melting the solidified body of the liquid on the substrate is provided. When solidifying the liquid, an internal pressure of the liquid on the substrate is varied.

The substrate treating method is to treat a substrate W on which a pattern P is formed. The pattern P includes a plurality of projections A and a plurality of recesses B. The substrate treating method includes a first application step, a first curing step, and a first thermal decomposition step. In the first application step, a first dry assistant liquid F1 is applied to the substrate W. The first dry assistant liquid F1 contains a thermosetting material and a solvent. In the first curing step, the first dry assistant liquid F1 on the substrate W is heated. In the first curing step, a first solidified film H1 is formed on the substrate W. In the first thermal decomposition step, the first solidified film H1 is heated and thus the first solidified film H1 is thermally decomposed. In the first thermal decomposition step, the substrate W is dried.

A carrier boat for die package flux cleaning, including: a body having at least one pair of substantially parallel sides, the body comprising one or more die package receptacles each oriented at a non-parallel angle relative to the substantially parallel sides of the body such that, when a die package is seated in a die package receptacle of the one or more die package receptacles, a first pair of opposing sides of a die of the die package are substantially perpendicular to the substantially parallel sides.

Methods and apparatus for forming an integrated circuit device, including performing a spin-cleaning step at a first rotational speed on a semiconductor substrate supporting the integrated circuit device at an intermediate stage of manufacturing. A rinse fluid is then dispensed over a top surface of the substrate. A rotational speed of the substrate is increased with a constant acceleration no greater than 125 revolutions per minute per second (rpm/s) from the first rotational speed to a second rotational speed. The second rotational speed is maintained for a rinse fluid extraction period. The rotational speed is then reduced to zero.