Various embodiments comprise apparatuses and related methods for cleaning a substrate. In one embodiment, an apparatus includes a substrate holder to hold and rotate the substrate at various speeds. An optional inner shield and an optional outer shield, when in a closed position, surround the substrate holder during operation of the apparatus. Each of the inner shield and the outer shield can operate independently in at least one of rotational speed and direction from the other shield. At least one of a front-side laser and a back-side laser are arranged to clean one or both sides of the substrate and edges of the substrate substantially concurrently or independently by impinging a light onto at least one surface of the substrate. A gas flow, combined with a high rotational-speed of the shields and substrate, assists in removing effluents from the substrate. Additional apparatuses and methods of forming the apparatuses are disclosed.

A dry cleaning apparatus includes a chamber, a substrate support supporting a substrate within the chamber, a shower head arranged in an upper portion of the chamber to supply a dry cleaning gas toward the substrate, the shower head including an optical window transmitting a laser light therethrough toward the substrate support, a plasma generator generating plasma from the dry cleaning gas, and a laser irradiator irradiating the laser light on the substrate through the optical window and the plasma to heat the substrate.

A display apparatus may include a base substrate including a first portion and a second portion smaller than the first portion, a plurality of pixels disposed on the first portion, a protection substrate disposed below the base substrate, and a groove disposed in a portion of the protection substrate and overlapped with the second portion. The groove may include a first region extending in a first direction, and a second region and a third region, which are arranged along the first direction, wherein the first region is interposed between the second region and the third region. The first and second portions may be arranged in a second direction crossing the first direction, and a width of each of the second and third regions may be larger than a first width of the first region, when measured in the second direction.

A wafer treatment apparatus with a rotatable table inside a chamber and a plurality of holding pins arranged on the table, where a periphery of a wafer is held by the plurality of holding pins and the wafer is subjected to a cleaning and/or drying treatment while being rotated, where one or more of the plurality of holding pins are drivable, and press and hold the wafer so that a resultant force working on the held wafer works in a direction that bends the wafer upwards in a convex shape. A wafer treatment apparatus and a method for treating a wafer that can prevent particles from aggregating in a wafer rotation center and prevent dry marks, etc. from occurring.

Described are methods of using laser energy to remove particles from a surface, such as a porous surface, optionally without causing ablation to the surface.

The inventive concept provides a method for treating a substrate. The method includes removing a film on the substrate by applying a pulsed laser to the rotating substrate, in which thickness of the film to be removed is measured and pulse energy of the pulsed laser is selected based on the measured thickness of the film.

A wafer composite includes a handle substrate, an auxiliary layer formed on a first main surface of the handle substrate, and a silicon carbide structure formed over the auxiliary layer. The handle substrate is subjected to laser radiation that modifies crystalline material along a focal plane in the handle substrate. The focal plane is parallel to the first main surface. The auxiliary layer is configured to stop propagation of microcracks that the laser radiation may generate in the handle substrate.

An apparatus and system for treating a substrate includes a chamber having an inner space, a support unit in the inner space and configured to support and rotate the substrate, and first and second laser irradiation unit configured to irradiate first and second laser beams onto the substrate. The first laser irradiation unit includes a first laser light source configured to generate the first laser beam, and a first wavelength adjusting member configured to adjust a range of a wavelength of the first laser beam received from the first laser light source. The second laser beam, and a second wavelength adjusting member configured to adjust a range of a wavelength of the second laser beam received from the second laser light source.

A method for treating a substrate includes a first treating operation for treating an edge region of the substrate by irradiating a first laser beam having a first wavelength to the edge region of a rotating substrate, and a second treating operation for treating the edge region by irradiating a second laser beam of a second wavelength to the edge region of the rotating substrate, wherein the first wavelength and the second wavelength are different from each other.

Various embodiments comprise apparatuses and related methods for cleaning a substrate. In one embodiment, an apparatus includes a substrate holder to hold and rotate the substrate at various speeds. An optional inner shield and an optional outer shield, when in a closed position, surround the substrate holder during operation of the apparatus. Each of the inner shield and the outer shield can operate independently in at least one of rotational speed and direction from the other shield. At least one of a front-side laser and a back-side laser are arranged to clean one or both sides of the substrate and edges of the substrate substantially concurrently or independently by impinging a light onto at least one surface of the substrate. A gas flow, combined with a high rotational-speed of the shields and substrate, assists in removing effluents from the substrate. Additional apparatuses and methods of forming the apparatuses are disclosed.