A processing method of processing a combined substrate in which a first substrate and a second substrate are bonded to each other includes forming a peripheral modification layer along a boundary between a peripheral portion of the first substrate as a removal target and a central portion of the first substrate; forming a non-bonding region in which bonding strength between the first substrate and the second substrate at the peripheral portion is reduced; forming a reference modification layer, which serves as a determination reference of a formation position of either the peripheral modification layer or the non-bonding region, at a non-bonding surface of the first substrate not bonded to the second substrate; and removing the peripheral portion starting from the peripheral modification layer.

Methods and tools for de-bonding and cleaning substrates are disclosed. A method includes de-bonding a surface of a first substrate from a second substrate, and after de-bonding, cleaning the surface of the first substrate. The cleaning comprises physically contacting a cleaning mechanism to the surface of the first substrate. A tool includes a de-bonding module and a cleaning module. The de-bonding module comprises a first chuck, a radiation source configured to emit radiation toward the first chuck, and a first robot arm having a vacuum system. The vacuum system is configured to secure and remove a substrate from the first chuck. The cleaning module comprises a second chuck, a spray nozzle configured to spray a fluid toward the second chuck, and a second robot arm having a cleaning device configured to physically contact the cleaning device to a substrate on the second chuck.

Methods and tools for de-bonding and cleaning substrates are disclosed. A method includes de-bonding a surface of a first substrate from a second substrate, and after de-bonding, cleaning the surface of the first substrate. The cleaning comprises physically contacting a cleaning mechanism to the surface of the first substrate. A tool includes a de-bonding module and a cleaning module. The de-bonding module comprises a first chuck, a radiation source configured to emit radiation toward the first chuck, and a first robot arm having a vacuum system. The vacuum system is configured to secure and remove a substrate from the first chuck. The cleaning module comprises a second chuck, a spray nozzle configured to spray a fluid toward the second chuck, and a second robot arm having a cleaning device configured to physically contact the cleaning device to a substrate on the second chuck.

A system is described for removing a dielectric gel, which has been layered atop the electrical components of a failed electrical system, without further damaging the electrical components of the failed electrical system. The system includes a raster component configured to project a laser for vaporizing a dielectric layer of an electric component into a plasma plume located above the dielectric layer. The system further includes a first vacuum nozzle positioned on a first side of the raster component and configured to extract a first portion of the plasma plume while the plasma plume is located above the dielectric layer, and a second vacuum nozzle positioned on a second side of the raster component and configured to extract a second portion of the plasma plume while the plasma plume is located above the dielectric layer.

A wafer processing method includes a wafer holding step of holding a wafer having devices formed on the front side, a protective film forming step of forming a water-soluble protective film on the front side of the wafer, a laser beam applying step of applying a laser beam to the wafer along streets, a cleaning step of cleaning the wafer to then remove the protective film, and a foreign matter removing step of removing foreign matter from the wafer when a predetermined period of time has elapsed after cleaning. This period of time is set as a period of time until a phosphorus containing reaction product produced at a laser processed portion is evaporated to react with water in the air, thereby producing the foreign matter containing phosphorus on bumps formed on each device.

A substrate processing system configured to process a substrate includes a first modifying apparatus configured to form, in a combined substrate in which a front surface of a first substrate and a front surface of a second substrate are bonded to each other, an internal modification layer elongated within the first substrate in a plane direction from a center of the first substrate toward at least an edge portion of the first substrate as a removing target; a second modifying apparatus configured to form, within the first substrate, an edge modification layer elongated in a thickness direction of the first substrate along a boundary between the edge portion and a central portion of the first substrate; and a separating apparatus configured to separate a portion of the first substrate at a rear surface side, starting from the internal modification layer.

Methods and tools for de-bonding and cleaning substrates are disclosed. A method includes de-bonding a surface of a first substrate from a second substrate, and after de-bonding, cleaning the surface of the first substrate. The cleaning comprises physically contacting a cleaning mechanism to the surface of the first substrate. A tool includes a de-bonding module and a cleaning module. The de-bonding module comprises a first chuck, a radiation source configured to emit radiation toward the first chuck, and a first robot arm having a vacuum system. The vacuum system is configured to secure and remove a substrate from the first chuck. The cleaning module comprises a second chuck, a spray nozzle configured to spray a fluid toward the second chuck, and a second robot arm having a cleaning device configured to physically contact the cleaning device to a substrate on the second chuck.

A wafer processing method includes a wafer holding step of holding a wafer having devices formed on the front side, a protective film forming step of forming a water-soluble protective film on the front side of the wafer, a laser beam applying step of applying a laser beam to the wafer along streets, a cleaning step of cleaning the wafer to then remove the protective film, and a foreign matter removing step of removing foreign matter from the wafer when a predetermined period of time has elapsed after cleaning. This period of time is set as a period of time until a phosphorus containing reaction product produced at a laser processed portion is evaporated to react with water in the air, thereby producing the foreign matter containing phosphorus on bumps formed on each device.

A method and system for effectively removing particles from semiconductor surfaces using a multi-beam laser-based approach. The invention employs a plurality of laser beams generated by a spatial light modulator, which create multiple light spots on a particle at various locations across its surface. By adjusting the phase of these laser beams, alternating clockwise and counterclockwise torsional forces are induced, generating rotational movement that weakens the adhesion between the particles and the semiconductor surface. The system utilizes a liquid crystal spatial light modulator to precisely control beam parameters, enhancing the ability to reduce adhesion forces due to van der Waals interactions or electrostatic forces. An automated optical inspection system provides real-time monitoring and feedback, ensuring precise manipulation and complete removal of particles. An airstream is subsequently employed to detach and remove the loosened particles, thereby improving semiconductor surface cleanliness without causing mechanical damage.

Aspects of the subject disclosure may include, for example, an Integrated Circuit (IC) assembly. The assembly includes a first die including a first stack of insulating layers having a first overall thickness. The first die further includes a first through-device via configured to provide a first conductive path therethrough. The IC assembly further includes a second die affixed to the first die in a stacked arrangement, the second die including a second stack of insulating layers having a second overall thickness. The second die further includes a second through-device via configured to provide a second conductive path extending therethrough. The second through-device via is electrically coupled to the first through-device via to obtain a through-assembly via configured to provide a through-assembly conductive path extending from the upper surface of the first die to the lower surface of the second die. Other embodiments are disclosed.