Disclosed is a substrate processing apparatus including a dry processing unit and a controller. The dry processing unit includes: a chamber that accommodates the substrate; a supercritical processing liquid supply unit that supplies a supercritical processing liquid to the substrate; a heating unit that heats an inside of the chamber; and a discharge unit that discharges a fluid in the chamber from the chamber. The controller controls the supercritical processing liquid supply unit, the heating unit, and the discharge unit such that the supercritical processing liquid is supplied to the substrate before or after the substrate is accommodated in the chamber, the inside of the chamber is heated to change the supercritical processing liquid into a supercritical fluid or a subcritical fluid, and the supercritical fluid or the subcritical fluid is discharged from the chamber.

A substrate processing method capable of suppressing particles from remaining on a surface of a substrate is provided. In the substrate processing method, a liquid film of a protection liquid is formed on the surface of the substrate, and the substrate is dried by using a supercritical fluid so that the protection liquid is removed from the surface of the substrate. After the substrate is dried, the particles remaining on the surface of the substrate is removed.

A substrate processing apparatus includes a processing vessel; and a processing fluid supply configured to supply a processing fluid in a supercritical state into the processing vessel. The processing fluid supply includes a fluid supply line; a cooling device provided in the fluid supply line, and configured to cool the processing fluid in a gas state to produce the processing fluid in a liquid state; a pump positioned downstream of the cooling device; a heating device positioned downstream of the pump, and configured to heat the processing fluid in the liquid state to generate the processing fluid in the supercritical state; a first flow rate adjuster positioned between the pump and the heating device, and configured to adjust a supply flow rate of the processing fluid supplied to the processing vessel; and a controller configured to control the first flow rate adjuster.

A substrate processing method includes: a pressure increasing process of increasing an internal pressure of a process container to a processing pressure by supplying a process fluid into the process container; and after the pressure increasing process, a circulating process of supplying the process fluid from a second discharge part into the process container and discharging the process fluid in the process container from a fluid discharge part, while maintaining the internal pressure at the processing pressure, wherein the pressure increasing process includes: a first pressure increasing stage of increasing the internal pressure to a switching pressure by supplying the process fluid from a first discharge part into the process container; and after the first pressure increasing stage, a second pressure increasing stage of increasing the internal pressure from the switching pressure to the processing pressure by supplying the process fluid from the second discharge part into the process container.

A substrate treating device includes a liquid treating chamber for liquid-treating a substrate therein, a drying chamber for dry-treating the liquid-treated substrate, a transfer device for transferring the substrate between the liquid treating chamber and the drying chamber, and a controller for controlling the liquid treating chamber and the transfer device. The transfer device includes a transfer robot having a hand for placing the substrate thereon, and a heating member for heating the substrate. The controller controls the transfer device such that the heating member of the transfer device heats a liquid on the substrate to a first temperature before the transfer device transfers the substrate taken out from the liquid treating chamber to the drying chamber.

A substrate processing apparatus includes a substrate cleaning unit cleaning a substrate, a substrate drying unit drying the substrate, and a transfer robot transferring the substrate between the substrate cleaning unit and the substrate drying unit. The substrate drying unit includes a substrate processing container having a substrate processing space accommodating the substrate, and the transfer robot includes a surface temperature measurement sensor measuring a surface temperature of the substrate processing container.

Provided are an apparatus and a method for treating a substrate at a high-pressure atmosphere. The apparatus for treating the substrate includes a first body and a second body combined with each other to define a treatment space in which the substrate is treated, a sealing member interposed between the first body and the second body to seal the treatment space from an outside at a position in which the first body is in close contact with the second body, and a driving member to drive the first body or the second body such that the treatment space is open or closed. The sealing member is positioned in a sealing groove formed in the first body. The sealing member is deformed to be in close contact with the second body by pressure of the treatment space when a process is performed.

A substrate drying apparatus includes; a drying chamber configured to load a substrate and including a lower chamber and an upper chamber above the lower chamber, a supply port configured to supply a supercritical fluid into the drying chamber and including a main supply port and a sub-supply port horizontally spaced apart from the main supply port, wherein the main supply port penetrates a center portion of the upper chamber, and a first buffer member coupled to the upper chamber, vertically separated from the sub-supply port, and vertically overlapping the sub-supply port, such that supercritical fluid vertically introduced into the drying chamber through the sub-supply port is impeded by the first buffer member to change a flow direction for the supercritical fluid.

A substrate processing apparatus includes a chamber providing a space in which a substrate is processed, a first substrate support within the chamber and configured to support the substrate when the substrate is loaded into chamber, a second substrate support within the chamber and configured to support the substrate in a height greater than the height in which the first substrate supports the substrate, a first supply port through which a supercritical fluid is supplied to a first space under the substrate of a chamber space, a second supply port through which the supercritical fluid is supplied to a second space above the substrate of the chamber space, and an exhaust port through which the supercritical fluid is exhausted from the chamber.

The present disclosure provides a method and a cleaning apparatus for cleaning semiconductor wafers. The cleaning apparatus includes a plurality of cleaning tanks, a dipping tank, a first robot hand, a second robot hand, and at least one drying chamber. The plurality of cleaning tanks is configured to clean a plurality of wafers held by a cassette by cleaning agents. The plurality of wafers is cleaned in the plurality of cleaning tanks through a batch process. The dipping tank is configured to rinse the plurality of wafers by a replacement agent. The at least one drying chamber is configured to dry the wafer taken by the second robot hand with single wafer process.